Harri Lipsanen
Professor, Nanotechnology at Aalto University School of Business
Schools
- Aalto University School of Business
Links
Biography
Aalto University School of Business
My present activities in Micronova Research Center focus mostly on nanotechnology and nanostructures based on advanced materials which are used in nanoelectronic and photonic devices. Micronova forms the major part of the national OTANANO research infrastructure. My current research topics include
- graphene and other 2D materials (CVD fabrication and devices), see e.g. http://graphene-flagship.eu
- semiconductor nanowires, see e.g. http://www.iet.ntnu.no/projects/nanordsun/
- energy efficiency especially in advanced LEDs and solar cells, see http://energyefficiency.aalto.fi/en/research/moppi/
- nanofabrication by atomic layer deposition, MOCVD, electron beam lithography, self-assembly etc.
- devices based on semiconductors (GaN, GaAs, InP, Si...) and their nanostructures (quantum dots and wires, black silicon...), e.g. LEDs, x-ray detectors, SERS sensors, THz emitters and detectors
- functional surfaces and thin films (such as passivation and wetting properties)
- quantum effects in nanostructures
- materials characterization (optical spectroscopy, Raman mapping, AFM, SEM. XRD, XRR, electrical measurements)
CURRICULUM VITAE
EDUCATION:
1994 Doctor of Science Department of Technical Physics, Helsinki University of Technology
1997 Docent in Nanophysics Helsinki University of Technology
EMPLOYMENT:
1999 – Present Professor in Nanotechnology, Department of Micro- and Nanosciences
2014 – 2016 Head, Department of Micro- and Nanosciences
2010 – 2013 Vice Head, Department of Micro- and Nanosciences
2008 – 2010 Head, Laborarory of Micro- and Nanosciences
2003 – 2007 Head, Optoelectronics Laborarory
Peer-reviewed scientific articles
Journal article-refereed, Original researchI-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
Alekseev, P. A.; Geydt, P.; Dunaevskiy, M. S.; Lähderanta, E.; Haggrén, T.; Kakko, J. P.; Lipsanen, H.2017 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)ISSN: 0003-6951Rapid and Large-Area Characterization of Exfoliated Black Phosphorus Using Third-Harmonic Generation Microscopy
Autere, Anton; Ryder, Christopher R.; Säynätjoki, Antti; Karvonen, Lasse; Amirsolaimani, Babak; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri; Hersam, Mark C.; Sun, Zhipei2017 in JOURNAL OF PHYSICAL CHEMISTRY LETTERS (AMER CHEMICAL SOC)ISSN: 1948-7185Nonlinear microscopy using cylindrical vector beams Applications to three-dimensional imaging of nanostructures
Bautista, Godofredo; Kakko, Joona Pekko; Dhaka, Veer; Zang, Xiaorun; Karvonen, Lasse; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri; Kauranen, Martti2017 in Optics Express (OPTICAL SOC AMER)ISSN: 1094-4087Detection of raman scattering spectra of high spectral resolution in short oligonucleotides Compared with the full-length DNA spectra
Bayramov, F. B.; Toporov, Vladimir V.; Poloskin, E.D.; Chernev, A.L.; Dubina, Mikhail V.; Lipsanen, H.; Bairamov, Bakhysh H.2017 in Herald of the Bauman Moscow State Technical University. Series Natural Sciences (Bauman University Publishing House)ISSN: 1812-3368Young's Modulus of Wurtzite and Zinc Blende InP Nanowires
Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona Pekko; Jiang, Hua; Lipsanen, Harri2017 in NANO LETTERS (AMER CHEMICAL SOC)ISSN: 1530-6984Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties
Haggren, Tuomas; Shah, Syed; Autere, Anton; Kakko, Joona Pekko; Dhaka, Veer; Kim, Maria; Huhtio, Teppo; Sun, Zhipei; Lipsanen, Harri2017 in Nano Research (Press of Tsinghua University)ISSN: 1998-0124New Approach for Thickness Determination of Solution-Deposited Graphene Thin Films
Jussila, Henri; Albrow-Owen, Tom; Yang, He; Hu, Guohua; Aksimsek, Sinan; Granqvist, Niko; Lipsanen, Harri; Howe, Richard C.T.; Sun, Zhipei; Hasan, Tawfique2017 in ACS Omega (American Chemical Society)ISSN: 2470-1343Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy
Karvonen, Lasse; Saynatjoki, Antti; Huttunen, Mikko J.; Autere, Anton; Amirsolaimani, Babak; Li, Shisheng; Norwood, Robert A.; Peyghambarian, Nasser; Lipsanen, Harri; Eda, Goki; Kieu, Khanh; Sun, Zhipei2017 in NATURE COMMUNICATIONS (NATURE PUBLISHING GROUP)ISSN: 2041-1723Direct transfer of Wafer-scale graphene films
Kim, Maria; Shah, Ali; Li, Changfeng; Mustonen, Petri; Susoma, Jannatul; Manoocheri, Farshid; Riikonen, Juha; Lipsanen, Harri2017 in 2 D Materials (IOP PUBLISHING LTD)ISSN: 2053-1583Corrosion protection of steel with multilayer coatings: Improving the sealing properties of physical vapor deposition CrN coatings with Al2O3/ TiO2 atomic layer deposition nanolaminates
Leppäniemi, Jarmo; Sippola, Perttu; Broas, Mikael; Aromaa, Jari; Lipsanen, Harri; Koskinen, Jari2017 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090Graphene actively Q-switched lasers
Li, Diao; Xue, Hui; Qi, Mei; Wang, Yadong; Aksimsek, Sinan; Chekurov, Nikolai; Kim, Wonjae; Li, Changfeng; Riikonen, Juha; Ye, Fangwei; Dai, Qing; Ren, Zhaoyu; Bai, Jintao; Hasan, Tawfique; Lipsanen, Harri; Sun, Zhipei2017 in 2 D Materials (IOP PUBLISHING LTD)ISSN: 2053-1583Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K
Mynbaev, K. D.; Bazhenov, N. L.; Semakova, A. A.; Mikhailova, M. P.; Stoyanov, N. D.; Kizhaev, S. S.; Molchanov, S. S.; Astakhova, A. P.; Chernyaev, A. V.; Lipsanen, H.; Bougrov, V. E.2017 in Semiconductors (MAIK NAUKA/INTERPERIODICA/SPRINGER)ISSN: 1063-7826Spontaneous and stimulated emission in InAsSb-based LED heterostructures
Mynbaev, K.D.; Bazhenov, N. L.; Semakova, A. A.; Chernyaev, A. V.; Kizhaev, S. S.; Stoyanov, N. D.; Bougrov, Vladislav E.; Lipsanen, H.; Salikhov, Kh M.2017 in INFRARED PHYSICS AND TECHNOLOGY (Elsevier)ISSN: 1350-4495Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
Susoma, Jannatul; Lahtinen, Jouko; Kim, Maria; Riikonen, Juha; Lipsanen, Harri2017 in AIP ADVANCES (AMER INST PHYSICS)ISSN: 2158-3226Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers
Säynätjoki, Antti; Karvonen, Lasse; Rostami, Habib; Autere, Anton; Mehravar, Soroush; Lombardo, Antonio; Norwood, Robert A.; Hasan, Tawfique; Peyghambarian, Nasser; Lipsanen, Harri; Kieu, Khanh; Ferrari, Andrea C.; Polini, Marco; Sun, Zhipei2017 in NATURE COMMUNICATIONS (NATURE PUBLISHING GROUP)ISSN: 2041-1723Probing the longitudinal electric field of Bessel beams using second-harmonic generation from nano-objects
Turquet, Léo; Kakko, Joona Pekko; Karvonen, Lasse; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri; Kauranen, Martti; Bautista, Godofredo2017 in JOURNAL OF OPTICS (IOP PUBLISHING LTD)ISSN: 2040-8978Tailorable second-harmonic generation from an individual nanowire using spatially phase-shaped beams
Turquet, Léo; Kakko, Joona Pekko; Zang, Xiaorun; Naskali, Liisa; Karvonen, Lasse; Jiang, Hua; Huhtio, Teppo; Kauppinen, Esko; Lipsanen, Harri; Kauranen, Martti; Bautista, Godofredo2017 in LASER AND PHOTONICS REVIEWS (Wiley-VCH Verlag)ISSN: 1863-8880Nonlinear imaging of nanostructures using beams with binary phase modulation
Turquet, Léo; Kakko, Joona Pekko; Jiang, Hua; Isotalo, Tero J.; Huhtio, Teppo; Niemi, Tapio; Kauppinen, Esko; Lipsanen, Harri; Kauranen, Martti; Bautista, Godofredo2017 in Optics Express (OPTICAL SOC AMER)ISSN: 1094-4087Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition Growth and mechanical properties
Ylivaara, Oili M E; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo Pekka; Ronkainen, Helena; Puurunen, Riikka2017 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition
Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo Pekka2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Growth and properties of self-catalyzed (In,Mn)As nanowires
Bouravleuv, Alexei; Cirlin, George; Reznik, Rodion; Khrebtov, Artem; Samsonenko, Yuriy; Werner, Peter; Soshnikov, Ilya; Savin, Alexander; Lipsanen, Harri2016 in PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS (Wiley-VCH Verlag)ISSN: 1862-6254Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
Broas, Mikael; Sippola, Perttu; Sajavaara, Timo; Vuorinen, Vesa; Pyymaki Perros, Alexander; Lipsanen, Harri; Paulasto-Kröckel, Mervi2016 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Protective capping and surface passivation of III-V nanowires by atomic layer deposition
Dhaka, Veer; Perros, Alexander; Naureen, Shagufta; Shahid, Naeem; Jiang, Hua; Kakko, Joona-Pekko; Haggren, Tuomas; Kauppinen, Esko; Srinivasan, Anand; Lipsanen, Harri2016 in AIP ADVANCES (AMER INST PHYSICS)ISSN: 2158-3226Synthesis and properties of ultra-long InP nanowires on glass
Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Pavir šiaus pasyvacijos įtakos pavieni ų GaAs nanovam zdeli ų elektrinėms savyb ėms tyrimas matuojant srov ės priklausomybę nue įtampos atominės mikroskopu
Geydt, P.; Alekseev, P. A.; Dunaevskiy, M. S.; Haggrén, T.; Kakko, J. P.; Lähderanta, E.; Lipsanen, H.2016 in LITHUANIAN JOURNAL OF PHYSICS (LITHUANIAN PHYSICAL SOC)ISSN: 1648-8504Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode
Geydt, P.; Dunaevskiy, M.; Alekseev, P.; Kakko, J. P.; Haggrén, T.; Lähderanta, E.; Lipsanen, H.2016 in Journal of Physics: Conference Series (IOP Publishing Ltd.)ISSN: 1742-6588Lithography-free shell-substrate isolation for core-shell GaAs nanowires
Haggren, Tuomas; Perros, Alexander Pyymaki; Jiang, Hua; Huhtio, Teppo; Kakko, Joona Pekko; Dhaka, Veer; Kauppinen, Esko; Lipsanen, Harri2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Optical characterization of directly deposited graphene on a dielectric substrate
Kaplas, Tommi; Karvonen, Lasse; Ahmadi, Sepehr; Amirsolaimani, Babak; Mehravar, Soroush; Peyghambarian, Nasser; Kieu, Khanh; Honkanen, Seppo; Lipsanen, Harri; Svirko, Yuri2016 in Optics Express (OPTICAL SOC AMER)ISSN: 1094-4087Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires
Kargar, Fariborz; Debnath, Bishwajit; Kakko, Joona Pekko; Säynätjoki, Antti; Lipsanen, Harri; Nika, Denis L.; Lake, Roger K.; Balandin, Alexander A.2016 in NATURE COMMUNICATIONS (NATURE PUBLISHING GROUP)ISSN: 2041-1723A technique for large-area position-controlled growth of GaAs nanowire arrays
Kauppinen, Christoffer; Haggren, Tuomas; Kravchenko, Aleksandr; Jiang, Hua; Huhtio, Teppo; Kauppinen, Esko; Dhaka, Veer; Suihkonen, Sami; Kaivola, Matti; Lipsanen, Harri; Sopanen, Markku2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Tunable Graphene-GaSe Dual Heterojunction Device
Kim, Wonjae; Li, Changfeng; Chaves, Ferney A.; Jiménez, David; Rodriguez, Raul D.; Susoma, Jannatul; Fenner, Matthias A.; Lipsanen, Harri; Riikonen, Juha2016 in ADVANCED MATERIALS (WILEY-V C H VERLAG GMBH)ISSN: 0935-9648Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
Lankinen, A.; Tuomi, T. O.; Kostamo, P.; Jussila, H.; Sintonen, S.; Lipsanen, H.; Tilli, M.; Mäkinen, J.; Danilewsky, A. N.2016 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090Black phosphorus polycarbonate polymer composite for pulsed fibre lasers
Li, Diao; Del Rio Castillo, Antonio Esau; Jussila, Henri; Ye, Guojun; Ren, Zhaoyu; Bai, Jintao; Chen, Xianhui; Lipsanen, Harri; Sun, Zhipei; Bonaccorso, Francesco2016 in Applied Materials Today (Elsevier BV)ISSN: 2352-9407TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern
Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.2016 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures
Polukhin, I. S.; Mikhailovskiy, G. A.; Rybalko, D. A.; Solov'Ev, Yu V.; Petukhov, E. P.; Odnoblyudov, M. A.; Kolodeznyi, E. S.; Mikhailov, A. K.; Bougrov, V. E.; Lipsanen, H.2016 in MATERIALS PHYSICS AND MECHANICS (Institute of Problems of Mechanical Engineering)ISSN: 1605-2730Atomic layer engineering of Er-ion distribution in highly doped Er:Al2O3 for photoluminescence enhancement
Rönn, John; Karvonen, Lasse; Kauppinen, Christoffer; Pyymaki Perros, Alexander ; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016 in ACS PHOTONICS (ACS Publications)ISSN: 2330-4022Pyrolytic carbon coated black silicon
Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi2016 in SCIENTIFIC REPORTS (NATURE PUBLISHING GROUP)ISSN: 2045-2322Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
Shtrom, I. V.; Bouravleuv, A. D.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Reznik, R. R.; Cirlin, G. E.; Dhaka, V.; Perros, A.; Lipsanen, H.2016 in Semiconductors (MAIK NAUKA/INTERPERIODICA/SPRINGER)ISSN: 1063-7826Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy
Susoma, Jannatul; Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri; Riikonen, Juha2016 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)ISSN: 0003-6951Resonant features of the terahertz generation in semiconductor nanowires
Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A.; Cirlin, G. E.; Kuritsyn, D. I.; Rumyantsev, V. V.; Morosov, S. V.; Kakko, J. P.; Huhtio, T.; Lipsanen, H.2016 in Semiconductors (MAIK NAUKA/INTERPERIODICA/SPRINGER)ISSN: 1063-7826Slot waveguide ring resonators coated by an atomic layer deposited organic/inorganic nanolaminate
Autere, A.; Karvonen, Lasse; Säynätjoki, A.; Roussey, M.; Färm, E.; Kemell, M.; Tu, X.; Liow, T. Y.; Lo, G. Q.; Ritala, M.; Leskelä, M.; Honkanen, S.; Lipsanen, H.; Sun, Z.2015 in Optics Express (OPTICAL SOC AMER)ISSN: 1094-4087Second-harmonic generation imaging of semiconductor nanowires by focused vector beams
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Karvonen, Lasse; Jiang, Hua; Huttunen, Mikko J.; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 in NANO LETTERS (AMER CHEMICAL SOC)ISSN: 1530-6984A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data
Chaves, Ferney A.; Jimenez, David; Sagade, Abhay A.; Kim, Won; Riikonen, Juha; Lipsanen, Harri; Neumaier, Daniel2015 in 2 D Materials (IOP PUBLISHING LTD)ISSN: 2053-1583Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals
Danilov, V.V.; Khrebtov, A.I.; Panfutova, A.S.; Cirlin, G.E.; Bouravleuv, A.D.; Dhaka, Veer; Lipsanen, Harri2015 in Technical Physics Letters (Maik Nauka-Interperiodica Publishing)ISSN: 1063-7850Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope
Geydt, P.; Alekseev, P.A.; Dunaevskiy, M.; Lähderanta, M.; Haggren, Tuomas; Kakko, Joona-Pekko; Lipsanen, Harri2015 in Journal of Physics: Conference Series (IOP Publishing Ltd.)ISSN: 1742-6588Solubility of Boron, Carbon, and Nitrogen in Transition Metals: Getting Insight into Trends from First-Principles Calculations
Hu, Xiaohui; Björkman, Torborn; Lipsanen, Harri; Sun, Lito; Krasheninnikov, Arkady V.2015 in JOURNAL OF PHYSICAL CHEMISTRY LETTERS (AMER CHEMICAL SOC)ISSN: 1948-7185Fabrication of Dual-Type Nanowire Arrays on a Single Substrate
Kakko, Joona-Pekko P.; Haggrén, Tuomas; Dhaka, Veer; Huhtio, Teppo; Peltonen, Antti; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri2015 in NANO LETTERS (AMER CHEMICAL SOC)ISSN: 1530-6984Investigation of second- and third-harmonic generation in few-layer gallium selenide by multiphoton microscopy
Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Rodriguez, Raul D.; Hartmann, Susanne; Zahn, Dietrich R.T.; Honkanen, Seppo; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri; Riikonen, Juha2015 in SCIENTIFIC REPORTS (NATURE PUBLISHING GROUP)ISSN: 2045-2322All-Graphene Three-Terminal Junction Field-Effect Devices as Rectifiers and Inverters
Kim, Wonjae; Li, Changfeng; Chekurov, Nikolai; Arpiainen, Sanna; Akinwande, Deji; Lipsanen, Harri; Riikonen, Juha2015 in ACS NANO (American Chemical Society ACS)ISSN: 1936-0851Polarization and thickness dependent absorption properties of black phosphorus New saturable absorber for ultrafast pulse generation
Li, Diao; Jussila, Henri; Karvonen, Lasse; Ye, Guojun; Lipsanen, Harri; Chen, Xianhui; Sun, Zhipei2015 in SCIENTIFIC REPORTS (NATURE PUBLISHING GROUP)ISSN: 2045-2322Nanotribological, nanomechanical and interfacial characterization of Atomic Layer Deposited TiO2 on a silicon substrate
Lyytinen, Jussi; Liu, Xuwen; Ylivaara, Oili M. E.; Sintonen, Sakari; Iyer, Ajai; Ali, Saima; Julin, Jaakko; Lipsanen, Harri; Sajavaara, Timo; Puurunen, Riikka L.; Koskinen, Jari2015 in WEAR (Elsevier BV)ISSN: 0043-1648Edge effect modeling and study for three-chip RGB light-emitting diodes
Podosinnikov, A.I.; Romanova, G.E.; Scheglov, S.A.; Peretyagin, V.S.; Mynbaev, K.D.; Lipsanen, Harri; Bougrov, V.E.2015 in Scientific and Technical Journal of Information Technologies, Mechanics and Optics (Elsevier BV)Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates
Rudinsky, M.E.; Karpov, S.Yu.; Lipsanen, Harri; Romanov, A.E.2015 in MATERIALS PHYSICS AND MECHANICS (Institute of Problems of Mechanical Engineering)ISSN: 1605-2730Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices
Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan2015 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Generation of terahertz radiation in ordered arrays of GaAs nanowires
Trukhin, V.N.; Bouravleuv, A.D.; Mustafin, I.A.; Kakko, Joona-Pekko; Huhtio, Teppo; Cirlin, G.E.; Lipsanen, Harri2015 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951The effect of resonant Mie absorption under THz radiation emission in semiconductor nanowires
Trukhin, V.N.; Buravlev, Alexei D.; Eliseev, A.I.; Mustafa, I.A.; Trukhin, A.V.; Kakko, Joona-Pekko; Huhtio, Teppo; Lipsanen, Harri2015 in OPTICS AND SPECTROSCOPY (Springer Science + Business Media)ISSN: 0030-400XProcessing and characterization of epitaxial GaAs radiation detectors
Wu, X.; Peltola, T.; Arsenovich, T.; Gadda, A.; Harkonen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, Harri; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.2015 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002Broadband laser polarization control with aligned carbon nanotubes
Yang, He; Fu, Bo; Li, Diao; Tian, Ying; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Ru; Hassanien, Abdou; Yang, Changxi; Tittonen, Ilkka; Zhaoyu, Re; Bai, Jintao; Li, Qingwen; Kauppinen, Esko I.; Lipsanen, Harri; Sun, Zhipei2015 in NANOSCALE (The Royal Society of Chemistry)ISSN: 2040-3364High-resolution Raman scattering in oligonucleotides
Bairamov, Farid B.; Poloskin, E.D.; Chernev, A.L.; Toporov, Vladimir V.; Dubina, Mikhail V.; Lashkul, A.; Lahderanta, E.; Lipsanen, Harri; Bairamov, Bakhysh2014 in PHYSICS OF THE SOLID STATE (Maik Nauka-Interperiodica Publishing)ISSN: 1063-7834High-resolution Raman scattering in oligonucleotides
Bairamov, Farid B.; Poloskin, E.D.; Chernev, A.L.; Toporov, Vladimir V.; Dubina, Mikhail V.; Lahderanta, E.; Lashkul, A.; Lipsanen, H.; Bairamov, Bakhysh2014 in Technical Physics Letters (Maik Nauka-Interperiodica Publishing)ISSN: 1063-7850Detection of high-resolution Raman spectra in short oligonucleotides
Bairamov, Farid B.; Poloskin, E.D.; Chernev, A.L.; Toporov, Vladimir V.; Dubina, Mikhail V.; Lahderanta, E.; Lipsanen, Harri; Bairamov, Bakhysh2014 in JETP LETTERS (AMER INST PHYSICS)ISSN: 0021-3640Resonant raman scattering in complexes of nc-Si/SiO2 quantum dots and oligonucleotides
Bairamov, Farid B.; Poloskin, E.D.; Kornev, A.A.; Chernev, A.L.; Toporov, Vladimir V.; Dubina, Mikhail V.; Röder, C.; Sprung, Carl; Lipsanen, Harri; Bairamov, Bakhysh2014 in Technical Physics Letters (Maik Nauka-Interperiodica Publishing)ISSN: 1063-7850Functionalization of nc-Si/SiO2 semiconductor quantum dots by oligonucleotides
Bayramov, Bakhysh; Poloskin, E.D.; Kornev, A.A.; Chernev, A.L.; Toporob, Vladimir V.; Dubina, Mikhail V.; Röder, C.; Sprung, Carl; Lipsanen, Harri; Bairamov, Bakhysh H.2014 in Semiconductors (MAIK NAUKA/INTERPERIODICA/SPRINGER)ISSN: 1063-7826Corrigendum Exceptionally strong and robust millimeterscale graphene-alumina composite (Nanotechnology (2014) 25, (355701))
Berdova, Maria; Pyymaki Perros, Alexander; Kim, Won; Riikonen, Juha; Ylitalo, Tuomo; Heino, Jouni; Li, Changfeng; Kassamakov, Ivan; Hæggström, Edward; Lipsanen, Harri; Franssila, Sami2014 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Exceptionally strong and robust millimeter-scale graphenealumina composite membranes
Berdova, Maria; Perros, Alexander; Kim, Wonjae; Riikonen, Juha; Ylitalo, Tuomo; Heino, Jouni; Li, Changfeng; Kassamakov, Ivan; Hæggström, Edward; Lipsanen, Harri; Franssila, Sami2014 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Low-height sharp edged patterns for capillary self-alignment assisted hybrid microassembly
Chang, Bo; Shah, Ali; Routa, Iiris; Lipsanen, Harri; Zhou, Quan2014 in JOURNAL OF MICRO-BIO ROBOTICS (Springer Science + Business Media)ISSN: 2194-6418Improved SERS Intensity from Silver Coated Black Silicon by Tuning Surface Plasmons
Chen, Ya; Kang, Guogang; Shah, Ali; Pale, Ville; Tian, Ying; Sun, Zhipei; Tittonen, Ilkka; Honkanen, Seppo; Lipsanen, Harri2014 in ADVANCED MATERIALS INTERFACES (WILEY-BLACKWELL)Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers
Haggren, T.; Jiang, H.; Kakko, J.-P.; Huhtio, T.; Dhaka, V.; Kauppinen, E.; Lipsanen, H.2014 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Photo-induced electron transfer at nanostructured semiconductorzinc porphyrin interface
Hakola, Hanna; Pyymaki Perros, Alexander; Myllyperkiö, Pasi; Kurotobi, Kei; Lipsanen, Harri; Imahori, Hiroshi; Lemmetyinen, Helge; Tkachenko, Nikolai V.2014 in Chemical Physics Letters (Elsevier)ISSN: 0009-2614Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys
Jussila, H.; Yu, K.M.; Kujala, J.; Tuomisto, F.; Subramaniyam, Nagarajan; Lemettinen, J.; Huhtio, T.; Tuomi, T.O.; Lipsanen, H.; Sopanen, M.2014 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Impact of ALD grown passivation layers on silicon nitride based integrated optical devices for very-near-infrared wavelengths
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Olsson, Anders; Aierken, Abuduwayiti; Jussila, Henri; Bauer, Jan; Oksanen, Jani; Breitenstein, Otwin; Lipsanen, Harri; Tulkki, Jukka2014 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Putkonen, Matti; Bosund, M.; Ylivaara, Oili M. E.; Puurunen, Riikka; Kilpi, L.; Ronkainen, H.; Sintonen, S.; Ali, S.; Lipsanen, H.; Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Sajavaara, T.; Buchanan, I.; Karwacki, E.; Vähä-Nissi, M.2014 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.
Sintonen, Sakari; Rudzinski, Mariusz; Suihkonen, Sami; Jussila, Henri; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas; Tuomi, Turkka O.; Lipsanen, Harri2014 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography
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Sintonen, Sakari; Ali, Saima; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri2014 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Defect structure of a free standing GaN wafer grown by the ammonothermal method
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Särkijärvi, Suvi; Sintonen, Sakari; Tuomisto, Filip; Bosund, Markus; Suihkonen, Sami; Lipsanen, Harri2014 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Ultrafast Carrier Dynamics In GaAs Nanowires
Trukhin, V.N.; Buravlev, A.D.; Dhaka, Veer; Cirlin, G.E.; Mustafin, I.A.; Kaliteevski, M.A.; Lipsanen, Harri; Samsonenko, Y.B.2014 in LITHUANIAN JOURNAL OF PHYSICS (LITHUANIAN PHYSICAL SOC)ISSN: 1648-8504Performance and Properties of Ultra-Thin Silicon Nitride X-ray Windows
Törmä, Pekka T.; Kostamo, Jari; Sipilä, Heikki; Mattila, Marco; Kostamo, Pasi; Kostamo, Esa; Lipsanen, Harri; Laubis, Christian; Scholze, Frank; Nelms, Nick; Shortt, Brian; Bavdaz, Marcos2014 in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0018-9499Radiation detectors fabricated on high-purity GaAs epitaxial materials
Wu, Xiaopeng; Kostamo, Pasi; Gädda, Akiko; Nenonen, Seppo; Riekkinen, Tommi; Härkönen, Jaakko; Salonen, Jaakko; Andersson, Hans; Zhilyaev, Yuri; Fedorov, Leonid; Eränen, Simo; Mattila, Marco; Lipsanen, Harri; Prunnila, Mika; Kalliopuska, Juha; Oja, Aarne2014 in JOURNAL OF INSTRUMENTATION (IOP Publishing Ltd.)Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Ylivaara, Oili M. E.; Liu, Xuwen; Kilpi, L.; Lyytinen, Jussi; Schneider, D.; Laitinen, M.; Julin, J.; Ali, S.; Sintonen, S.; Berdova, Maria; Haimi, Eero; Sajavaara, T.; Ronkainen, H.; Lipsanen, H.; Koskinen, Jari; Hannula, Simo-Pekka; Puurunen, R.L.2014 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090Electrical detection of picosecond acoustic pulses in vertical transport devices with nanowires
Young, E.S.K.; Bouravleuv, A.D.; Cirlin, G.E.; Dhaka, Veer; Lipsanen, Harri; Tchernycheva, M.; Scherbakov, A.V.; Platonov, A.V.; Akimov, A.V.; Kent, A.J.2014 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951High quality crystallinity controlled ALD TiO2 for waveguiding applications
Alasaarela, Tapani; Karvonen, Lasse; Jussila, Henri; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Tittonen, Ilkka; Lipsanen, Harri2013 in OPTICS LETTERS (OPTICAL SOC AMER)ISSN: 0146-9592Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy
Bouravleuv, Alexei; Cirlin, George; Sapega, Victor; Werner, Peter; Savin, Alexander; Lipsanen, Harri2013 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979New method of determining the Young’s modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope
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Dhaka, Veer; Oksanen, Jani; Jiang, Hua; Haggren, Tuomas; Nykänen, Antti; Sanatinia, Reza; Kakko, Joona-Pekko; Huhtio, Teppo; Mattila, Marco; Ruokolainen, Janne; Anand, Srinivasan; Kauppinen, Esko; Lipsanen, Harri2013 in NANO LETTERS (AMER CHEMICAL SOC)ISSN: 1530-6984GaAs nanowires grown on Al-doped ZnO buffer layer
Haggren, Tuomas; Pyymaki Perros, Alexander; Dhaka, Veer; Huhtio, Teppo; Jussila, Henri; Jiang, Hua; Ruoho, Mikko; Kakko, Joona-Pekko; Kauppinen, Esko; Lipsanen, Harri2013 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography
Jussila, Henri; Subramaniyam, Nagarajan; Sintonen, Sakari; Suihkonen, Sami; Lankinen, Aapo; Huhtio, Teppo; Paulmann, Carsten; Lipsanen, Harri; Tuomi, Turkka; Sopanen, Markku2013 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor
Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri2013 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures
Olsson, Anders; Aierken, Abuduwayiti; Oksanen, Jani; Suihkonen, Sami; Lipsanen, Harri; Tulkki, Jukka2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
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Riikonen, Juha; Kim, Wonjae; Li, Changfeng; Svensk, Olli; Arpiainen, Sanna; Kainlauri, Markku; Lipsanen, Harri2013 in CARBON (PERGAMON-ELSEVIER SCIENCE LTD)ISSN: 0008-6223Surface-Tension-Driven Self-Alignment of Microchips on Black-Silicon-Based Hybrid Template in Ambient Air
Shah, Ali; Chang, Bo; Suihkonen, S; Zhou, Quan; Lipsanen, Harri2013 in JOURNAL OF MICROELECTROMECHANICAL SYSTEMS (Institute of Electrical and Electronics Engineers Inc.)ISSN: 1057-7157Strain-compensated GaPN/GaP heterostructure on (0?0?1) silicon substrates for intermediate band solar cells
Subramaniyam, Nagarajan; Jussila, Henri; Lemettinen, Jori; Banerjee, Kaustuv; Sopanen, Markku; Lipsanen, Harri2013 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
Subramaniyam, Nagarajan; Svensk, Olli; Ali, Muhammad; Naresh-Kumar, Gunasekar; Trager-Cowan, Carol; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Analysis of Dislocations Generated during MetalOrganic Vapor Phase Epitaxy of GaN on Patterned Templates
Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates
Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T.; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Fabrication of GaN Structures with Embedded Network of Voids Using Pillar Patterned GaN Templates
Svensk, Olli; Ali, Muhammad; Riuttanen, Lauri; Törmä, Pekka; Sintonen, Sakari; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2013 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Rapid Large-Area Multiphoton Microscopy for Characterization of Graphene
Säynätjoki, Antti; Karvonen, Lasse; Riikonen, Juha; Kim, Wonjae; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Lipsanen, Harri; Kieu, Khanh2013 in ACS NANO (American Chemical Society ACS)ISSN: 1936-0851Ultra-Thin Silicon Nitride X-Ray Windows
Törmä, Pekka Tuomas; Sipilä, Heikki Johannes; Mattila, Marco; Kostamo, Pasi; Kostamo, Jari; Kostamo, Esa; Lipsanen, Harri; Nelms, Nick; Shortt, Brian; Bavdaz, Marcos; Laubis, Christian2013 in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0018-9499Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning
Ali, Muhammad; Riuttanen, Lauri; Kruse, M; Suihkonen, Sami; Romanov, A.E.; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2012 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)ISSN: 0268-1242Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN
Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, V.N.; Bert, N.A.; Odnoblyudov, M.A.; Bougrov, V.E.2012 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Formation of (Ga,Mn)As Nanowires and Study of their Magnetic Properties
Bouravleuv, Alexei D.; Cirlin, George E.; Romanov, Vladimir V.; Bagraev, Nikolai T.; Brilinskaya, E.S.; Lebedeva, Natalia A.; Novikov, S. V.; Lipsanen, Harri; Dubrovskii, Vladimir G.2012 in Semiconductors (MAIK NAUKA/INTERPERIODICA/SPRINGER)ISSN: 1063-7826Surface-tension driven self-assembly of microchips on hydrophobic receptor sites with water using forced wetting
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Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Riikonen, Juha; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis
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Jussila, Henri; Mattila, Päivi; Oksanen, J.; Perros, Alexander; Riikonen, Juha; Bosund, Markus; Varpula, Aapo; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Nonlinear behavior of three-terminal graphene junctions at room temperature
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Kivisaari, Pyry; Riuttanen, Lauri; Oksanen, Jani; Suihkonen, Sami; Ali, Muhammad; Lipsanen, Harri; Tulkki, Jukka2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
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Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri2012 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Synthesis of ZnO tetrapods for flexible and transparent UV sensors
Rackauskas, S.; Mustonen, K.; Järvinen, T.; Mattila, Marco; Klimova, O.; Jiang, H.; Tolochko, O.; Lipsanen, Harri; Kauppinen, E.I.; Nasibulin, A.G.2012 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Self-Assembled Porphyrins on Modified Zinc Oxide Nanorods: Development of Model Systems for Inorganic-Organic Semiconductor Interface Studies
Saarenpää, Hanna; Sariola-Leikas, Essi; Pyymaki Perros, Alexander; Kontio, Juha M.; Efimov, Alexander; Hayashi, Hironobu; Lipsanen, Harri; Imahori, Hiroshi; Lemmetyinen, Helge; Tkachenko, Nikolai V.2012 in Journal of Physical Chemistry C (AMER CHEMICAL SOC)ISSN: 1932-7447Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN
Sintonen, Sakari; Ali, Muhammad; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, Carsten; Tuomi, Turkka O.; Zajac, Marcin2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells
Subramaniyam, Nagarajan; Ali, M.; Jussila, Henri; Mattila, Päivi; Aierken, Abuduwayiti; Sopanen, Markku; Lipsanen, Harri2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations,
Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O.; Shirazi, R.; Lipsanen, Harri; Sopanen, Markku; Kardynal, Beata2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Photovoltaic properties of GaAsP coreshell nanowires on Si(001) substrate
Tchernycheva, M.; Rigutti, L.; Jacopin, G.; A de Luna, Bugallo; Lavenus, P.; Julien, F.H.; Timofeeva, M.; Bouravleuv, A.D.; Cirlin, G.E.; Dhaka, V.; Lipsanen, H.; Largeau, L.2012 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Void shape control in GaN re-grown on hexagonally patterned mask-less GaN
Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2011 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Properties of AlN grown by plasma enhanced atomic layer deposition
Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Huhtio, Teppo; Putkonen, Matti; Airaksinen, Veli-Matti; Lipsanen, Harri2011 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Capillary-driven self-assembly of microchips on oleophilic/oleophobic patterned surface using adhesive droplet in ambient air
Chang, Bo; Sariola, Veikko; Aura, Susanna; Ras, Robin H.A.; Klonner, Maria; Lipsanen, Harri; Zhou, Quan2011 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951”TlBr purification and single crystal growth for the detector applications
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Lingley, A.R.; Ali, M.; Liao, Y.; Mirjalili, R.; Klonner, M.; Sopanen, M.; Suihkonen, S.; Shen, T.; Otis, B.P.; Lipsanen, H.; Parviz, B.A.2011 in JOURNAL OF MICROMECHANICS AND MICROENGINEERING (IOP PUBLISHING LTD)ISSN: 0960-1317Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer
Nagarajan, S.; Aierken, A.; Jussila, H.; Banerjee, K.; Sopanen, M.; Lipsanen, H.2011 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)ISSN: 0268-1242X-ray diffraction study of GaN grown on patterned substrates
Sintonen, Sakari; Ali, Muhammad; Törmä, Pekka T.; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, C.; Tuomi, Turkka2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode
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Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.; Nevedomsky, V.; Bert, N2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Building molecular surface gradients with electron beam lithography
Toikkanen, Outi; Doan, Nguyet; Erdmanis, Mikhail; Lipsanen, Harri; Kontturi, Kyösti; Parviz, Babak2011 in JOURNAL OF MICROMECHANICS AND MICROENGINEERING (IOP PUBLISHING LTD)ISSN: 0960-1317Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC (0001)
Vesapuisto, E.; Kim, W.; Novikov, S.; Lipsanen, H.; Kuivalainen, P.2011 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)ISSN: 0370-1972ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION
Xie, D.; Feng, T.; Luo, Y; Han, X; Ren, T; Bosund, M; Li, S.; Airaksinen, V.-M.; Lipsanen, H.; Honkanen, S.2011 in JOURNAL OF ADVANCED DIELECTRICS (World Scientific Publishing Co. Pte Ltd)ISSN: 2010-135XInfluence of substrate temperature on the shape of GaAs nanowires grown by Auassisted MOVPE
Bouravleuv, A.D.; Sibirev, N.V.; Statkute, G.; Cirlin, G.E.; Lipsanen, H.; Duborovskii, V.G.2010 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry
Rangel-Kuoppa, V.T.; Sopanen, M.; Lipsanen, H.2010 in JOURNAL OF NANO RESEARCH (Trans Tech Publications)ISSN: 1662-5250Emission of Terahertz Radiation from GaN under Impact Ionization of Donors in an Electric Field
Shalygin, V.A.; "Vorob'ev", L.E.; Firsov, D.A.; Panevin, V.Yu.; Sofronov, A.N.; Melentyev, G.A.; Andrianov, A.V.; "Zakhar'in", A.O.; "Zinov'ev", N.N.; Suihkonen, Sami; Lipsanen, Harri2010 in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS (Allerton Press Inc.)ISSN: 1062-8738Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements
Sintonen, Sakari; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka Tuomas; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri2010 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors
Statkute, Gintare; Nasibulin, Albert G.; Sopanen, Markku; Hakkarainen, Teppo; Kauppinen, Esko; Lipsanen, Harri2010 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates
Törmä, Pekka; Ali, Muhammad; Svensk, Olli; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Mulot, Mikael; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.2010 in CRYSTENGCOMM (ROYAL SOC CHEMISTRY)Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation
Ali, Muhammad; Svensk, Olli; Zhen, Zhu; Suihkonen, Sami; Törmä, Pekka; Lipsanen, Harri; Sopanen, Markku; Hjort, K.; Jensen, J.2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)ISSN: 0921-4526Atomic layer deposition of ytterbium oxide using ß-diketonate and ozone precursors
Bosund, M.; Mizohata, K.; Hakkarainen, T.; Putkonen, Matti; Söderlund, M.; Honkanen, S.; Lipsanen, H.2009 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Characterization of TlBr for X-ray and γ-ray detector applications
Kostamo, P.; Shorohov, M.; Gostilo, V.; Sipilä, H.; Kozlov, V.; Lisitsky, I.; Kuznetsov, M.; Lankinen, A.; Danilewsky, A. N.; Lipsanen, H.; Leskelä, M.2009 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002Improvements and problems of Bridgman-Stockbarger method for fabrication of TlBr single crystal detectors
Kozlov, V.; Andersson, H.; Gostilo, V.; Kemell, M.; Kostamo, P.; Kouznetsov, M. S.; Leskelä, M.; Lipsanen, H.; Lisitsky, I. S.; Shorohov, M.; Sipilä, H.2009 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge
Lankinen, A.; Knuuttila, L.; Kostamo, P.; Tuomi, T.O.; Lipsanen, H.; McNally, P.J.; "O'Reilly", L.2009 in Journal of crystal growth (Elsevier)Fabrication and optical properties of metal-coated non-close-packed colloidal crystals
Mustonen, Anna; Lipsanen, Harri2009 in JOURNAL OF NONLINEAR OPTICAL PHYSICS AND MATERIALS (World Scientific Publishing Co. Pte Ltd)ISSN: 0218-8635Mechanistic investigation of ZnO nanowire growth
Rackauskas, Simas; Nasibulin, Albert G.; Jiang, Hua; Tian, Ying; Statkute, Gintare; Shandakov, Sergey D.; Lipsanen, Harri; Kauppinen, Esko I.2009 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2009 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Cascaded exciton emission of an individual strain-induced quantum dot
Schülein, F.J.R.; Laucht, A.; Riikonen, J.; Mattila, M.; Sopanen, M.; Lipsanen, H.; Finley, J.J.; Wixforth, A.; Krenner, H.J.2009 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field
Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Panevin, V. Yu; Sofronov, A. N.; Melentyev, G. A.; Antonov, A. V.; Gavrilenko, V. I.; Andrianov, A. V.; Zakharyin, A. O.; Suihkonen, S.; Törmä, Pekka; Ali, M.; Lipsanen, H.2009 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE
Törmä, Pekka T.; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Kostamo, Pasi; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)ISSN: 0921-4526Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy
Aierken, Abuduwayiti; Hakkarainen, Teppo; Sopanen, Markku; Riikonen, Juha; Sormunen, Jaakko; Mattila, Marco; Lipsanen, Harri2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures
Ali, Muhammad; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav2008 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Passivation of GaAs surface by atomic-layer-deposited titanium nitride
Bosund, Vesa; Aierken, Abuduwayiti; Tiilikainen, Jouni; Hakkarainen, Teppo; Lipsanen, Harri2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)Carrier dynamics in strain induced quantum dots modeled by rate equations and Gaussian excitation beam distribution
Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2008 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922GaAs Medipix2 hybrid pixel detector
Kostamo, Pasi; Nenonen, Seppo; Vahanen, Sami; Tlustos, Lukas; Frojdh, Christer; Campbell, Michael; Zhilyaev, Yuri; Lipsanen, Harri2008 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p-i-n structures
Kostamo, Pasi; Lankinen, Aapo; Tuomi, Turkka O.; Saynatjoki, Antti; Lipsanen, Harri; Zhilyaev, Yuri; Fedorov, Leonid; Orlova, Tatiana2008 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002X-ray excited optical luminescence of Mg-doped GaN
Lankinen, Aapo; Svensk, Olli; Mattila, Marco; Tuomi, Turkka; Lipsanen, Harri; McNally, Patrick; "O'reilly", Lisa; Paulmann, Carsten2008 in JOURNAL OF X-RAY SCIENCE AND TECHNOLOGY (IOS Press)ISSN: 0895-3996In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
Reentila, Outi; Lankinen, A.; Mattila, M.; Saynatjoki, A.; Tuomi, T.O.; Lipsanen, H.; "O'Reilly", L.; McNally, P.J.2008 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)ISSN: 0957-4522MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Odnoblyudo, M.A.; Bougrov, Vladislav2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer
Svensk, Olli; Törmä, Pekka; Suihkonen, Sami; Ali, Muhammad; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Efficient light coupling into a photonic crystal waveguide with flatband slow mode
Säynätjoki, Antti; Vynck, K.; Mulot, M.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 in PHOTONICS AND NANOSTRUCTURES: FUNDAMENTALS AND APPLICATIONS (Elsevier)ISSN: 1569-4410Properties, applications and fabrication of photonic crystals with ring-shaped holes in silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 in PHOTONICS AND NANOSTRUCTURES: FUNDAMENTALS AND APPLICATIONS (Elsevier)Novel method for error limit determination in x-ray reflectivity analysis
Tiilikainen, Jouni; Mattila, Marco; Hakkarainen, Teppo; Lipsanen, Harri2008 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exhange
Aierken, Abuduwayiti; Riikonen, Juha; Mattila, Marco; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2007 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)
Aierken, Abuduwayiti; Hakkarainen, Teppo; Tiilikainen, Jouni; Mattila, Marco; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri2007 in Journal of crystal growth (Elsevier)Noncovalent attachment of pyro-Pheophorbide a to a carbon nanotube
Kavakka, Jari S.; Heikkinen, Sami; Kilpeläinen, Ilkka; Mattila, Marco; Lipsanen, Harri; Helaja, Juho2007 in CHEMICAL COMMUNICATIONS (ROYAL SOC CHEMISTRY)Reduction of threading dislocation density in A1_(0.12)Ga_(0.88)N epilayers by a multistep technique
Lang, Teemu; Odnoblydov, Maxim; Bougrov, Vladislav; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri2007 in Journal of crystal growth (Elsevier)Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique
Lang, T.; Odnoblyudov, M. A.; Bougrov, V. E.; Suihkonen, S.; Svensk, O.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Catalyst-free fabrication of InP and InP(N) nanowires by metal organic vapor phase epitaxy
Mattila, Marco; Hakkarainen, Teppo; Lipsanen, Harri2007 in Journal of crystal growth (Elsevier)Enhanced luminescence from catalyst-free grown InP nanowires
Mattila, Marco; Hakkarainen, Teppo; Lipsanen, Harri; Jiang, Hua; Kauppinen, Esko2007 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Effect of substrate orientation on the catalyst-free growth of InP nanowires
Mattila, Marco; Hakkarainen, Teppo; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri2007 in NANOTECHNOLOGY (IOP PUBLISHING LTD)Slow light propagation in photonic crystal waveguides with ring-shaped holes
Mulot, Mikaël; Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2007 in JOURNAL OF OPTICS A: PURE AND APPLIED OPTICS (IOP Publishing Ltd.)ISSN: 1464-4258Tensile-strained GaAsN quantum dots on InP
Pohjola, P.; Hakkarainen, T.; Koskenvaara, Hannu; Sopanen, M.; Lipsanen, H.; Sainio, J.2007 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures
Reentilä, O.; Mattila, M.; Sopanen, Markku; Lipsanen, H.2007 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
Suihkonen, Sami; Lang, Teemu; Svensk, Olli; Sormunen, Jaakko; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim; Bougrov, Vladislav2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization of GaN LED efficiency
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Lipsanen, Harri; Odnoblyudov, Maxim; Bougrov, Vladislav2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
Suihkonen, S.; Svensk, O.; Lang, T.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Effect of growth conditions on electrical properties of Mg-doped p-GaN
Svensk, Olli; Suihkonen, Sami; Lang, Teemu; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Dispersion engineering of photonic crystal waveguides with ring-shaped holes
Säynätjoki, Antti; Mulot, Mikaël; Ahopelto, Jouni; Lipsanen, Harri2007 in Optics Express (OPTICAL SOC AMER)ISSN: 1094-4087Genetic algorithm using independent component analysis in x-ray reflectivity curve fitting of periodic layer structures
Tiilikainen, Jouni; Bosund, Vesa; Tilli, Juha-Matti; Sormunen, Jaakko; Mattila, Marco; Hakkarainen, Teppo; Lipsanen, Harri2007 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Fitness function and nonunique solutions in x-ray reflectivity curve fitting: crosserror between surface roughness and mass density
Tiilikainen, Jouni; Bosund, Vesa; Mattila, Marco; Hakkarainen, Teppo; Sormunen, Jaakko; Lipsanen, Harri2007 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Accuracy in x-ray reflectivity analysis
Tiilikainen, Jouni; Tilli, Juha-Matti; Bosund, Vesa; Mattila, Marco; Hakkarainen, Teppo; Sormunen, Jaakko; Lipsanen, Harri2007 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells
Aierken, Abuduwayiti; Riikonen, Juha; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Experimental investigation towards a periodically pumped single-photon source
Bödefeld, C.; Ebbecke, J.; Toivonen, J.; Sopanen, M.; Lipsanen, H.; Wixforth, A.2006 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Comparison of Ge and GaAs substrates for metalorganic vapor phase epitaxy of GaIn(N)As quantum wells
Knuuttila, Lauri; Reentila, Outi; Mattila, Marco; Lipsanen, Harri2006 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Carrier dynamics in strain-induced InGaAsP/InP quantum dots
Koskenvaara, Hannu; Riikonen, Juha; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri2006 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)ISSN: 1386-9477Ge/GaAs heterostructure matrix detector
Kostamo, P.; Säynätjoki, Antti; Knuuttila, L.; Lipsanen, H.; Andersson, H.; Banzuzi, K.2006 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Romanov, A.E.; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2006 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)ISSN: 1862-6300Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2006 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge
Lankinen, Aapo; Knuuttila, Lauri; Tuomi, Turkka; Kostamo, Pasi; Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri; McNally, P.J.; Lu, X.; Sipilä, H.; Vaijärvi, S.; Lumb, D.2006 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002Catalyst-free growth of In(As)P nanowires on silicon
Mattila, Marco; Hakkarainen, Teppo; Lipsanen, Harri; Jiang, Hua; Kauppinen, Esko2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Crystal-structure-dependent photoluminescence from InP nanowires
Mattila, Marco; Hakkarainen, Teppo; Mulot, Mikael; Lipsanen, Harri2006 in NANOTECHNOLOGY (IOP PUBLISHING LTD)Metal contacts on InN Proposal for Schottky contact
Rangel-Kuoppa, V.T.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.2006 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922In-situ determination of nitrogen content in InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Nitrogen content of GaAsN quantum wells by in-situ monitoring during MOVPE growth
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring
Reentilä, outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots
Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Aierken, Abuduwayiti; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 in NANOTECHNOLOGY (IOP PUBLISHING LTD)Characterization of photonic crystal waveguides using Fabry-Pérot resonances
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, S.; Ahopelto, J.; Lipsanen, Harri2006 in JOURNAL OF OPTICS A: PURE AND APPLIED OPTICS (IOP Publishing Ltd.)ISSN: 1464-4258InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Säynätjoki, Antti; Kostamo, Pasi; Sormunen, Jaakko; Riikonen, Juha; Lankinen, Aapo; Lipsanen, Harri; Andersson, H.; Banzuzi, K.; Nenonen, S.; Sipilä, H.; Vaijärvi, S.2006 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)ISSN: 0168-9002Nonlinear fitness–space–structure adaptation and principal component analysis in genetic algorithms: an application to x-ray reflectivity analysis
Tiilikainen, Jouni; Tilli, J-M; Bosund, Vesa; Mattila, Marco; Hakkarainen, Teppo; Airaksinen, Veli-Matti; Lipsanen, Harri2006 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Low Tempereture Growth GaAs on Ge
Knuuttila, Lauri; Lankinen, Aapo; Likonen, J.; Lipsanen, Harri; Lu, X.; McNally, P.; Riikonen, Juha; Tuomi, Turkka2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Low temperature growth GaAs on Ge
Knuuttila, L.; Lankinen, A.; Likonen, J.; Lipsanen, H.; Lu, X.; McNally, P.; Riikonen, J.; Tuomi, T.2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Synchrotron x-ray topographic study of dislocations and stacking faults in InAs
Lankinen, Aapo; Tuomi, Turkka; Riikonen, Juha; Knuuttila, Lauri; Lipsanen, Harri; Sopanen, Markku; Danilewsky, A.; McNally, J.; "O'Reilly", L.; Zhilyaev, Y.; Fedorov, L.; Sipilä, H.; Vaijärvi, S.; Simon, R.; Lumb, D.; Owens, A.2005 in Journal of crystal growth (Elsevier)Highly Tunable Emission from Strain-Induced InGasp/InP Quantum Dots
Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
Riikonen, Juha; Tuomi, Turkka; Lankinen, Aapo; Sormunen, Jaakko; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; McNally, P.J.; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2005 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)InGaAs/InP quantum dots induced by self-organized InAs stressors-islands
Riikonen, Juha; Sormunen, Jaakko; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
Sormunen, Jaakko; Riikonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAS(P)/InP
Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 in NANOTECHNOLOGY (IOP PUBLISHING LTD)Transformation of Self-Assembled InAs/InP Quantum Dots into Quantum Rings without Capping
Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri2005 in NANO LETTERS (AMER CHEMICAL SOC)Structural and optical properties of GaInNAs/GaAs quantum structures
Hakkarainen, Teppo; Toivonen, Juha; Koskenvaara, Hannu; Sopanen, Markku; Lipsanen, Harri2004 in JOURNAL OF PHYSICS: CONDENSED MATTER (IOP PUBLISHING LTD)Self assembled In(Ga)As islands on Ge substrate
Knuuttila, Lauri; Korkala, T.; Sopanen, Markku; Lipsanen, Harri2004 in Journal of crystal growth (Elsevier)The morphology of an InP wettig layer on GaAs
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2004 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)Valolla vauhtia viestintään
Reentilä, Outi; Mattila, Marco; Lipsanen, Harri; Yliniemi, Sanna; Honkanen, Seppo2004 in Prosessori (Elsevier Science B.V.)ISSN: 0357-4121Passivation of GaAS surface by ultrathin epitaxial GaN layer
Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2004 in Journal of crystal growth (Elsevier)Morphology of ultra-thin cubic GaN layers on GaAs(100) grown by MOVPE with DMHy as nitrogen source
Sormunen, Jaakko; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri2004 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor
Sormunen, Jaakko; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri2004 in Journal of crystal growth (Elsevier)Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri2003 in Journal of crystal growth (Elsevier)In(Ga)As quantum dots on Ge substrate
Knuuttila, Lauri; Kainu, Kalle; Sopanen, Markku; Lipsanen, Harri2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, Hannu; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Growth of GaAs on polycrystalline silicon-on-insulator
Riikonen, Juha; Säynätjoki, Antti; Sopanen, Markku; Lipsanen, Harri; Ahopelto, Jouni2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Optical waveguides on polysilicon-on-insulator
Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri; Ahopelto, Jouni2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Misfit dislocations in GaAsN/GaAs interface
Toivonen, Juha; Tuomi, Turkka; Riikonen, Juha; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri; McNally, P.J; Chen, W.; Lowney, D.2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells
Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2003 in IEE Proceedings-Optoelectronics (Springer New York)Observation of defect complexes containing Ga vacancies in GaAsN
Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri; Oila, Juha; Saarinen, K.2003 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy
Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri2002 in Journal of crystal growth (Elsevier)Pumping of quantum dots with surface acoustic waves
Bödefeld, C.; Wixfoth, A.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2001 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)ISSN: 0370-1972Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm
Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri2001 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys
Li, W.; Pessa, M.; Toivonen, J.; Lipsanen, H.2001 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Correlation effects in strain-induces quantum dots
Rinaldi, R.; DeVittorio, M.; Cingolani, R.; Hohenester, U.; Molinari, E.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.2001 in Physica Status Solidi B (AMER PHYSICAL SOC)Longitudinal Stark effect in parabolic quantum dots
Rinaldi, Ross; DeGiorgi, Milena; DeVittorio, Massimo; Melcarne, Angelo; Visconti, Paolo; Cingolani, Roberto; Lipsanen, Harri; Sopanen, Markku; Drufva, T.; Tulkki, Jukka2001 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Correlation effects in strain-induced quantum dots
Rinaldi, R.; DeVittorio, M.; Cingolani, R.; Hohenester, U.; Molinari, E.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.2001 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)ISSN: 0370-1972Influence of Coulomb and exchange interation on quantum dot magnetoluminescence up to B=45T
Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.2000 in Physica Status Solidi A (Akademie Verlag GMBH)Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45 T)
Cingolani, R.; De Giorgi, M.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.2000 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)ISSN: 1386-9477Influence on coulomb and exhange interaction on quantum dot magnetoluminescence up to 45 t.
Congolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.2000 in Physics Status Solidi A. (Elsevier)Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures
Lingk, C.; Helfer, W.; von Plessen, G.; Feldmann, J.; Stock, K.; Feise, W.M.; Citrin, D.S.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Tulkki, J.; Ahopelto, J.2000 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Effects of a few-particle interaction on the atomiclike levels of a single strain-induced quantum dot
Rinaldi, R.; Antonaci, S.; De Vittorio, M.; Cingolani, R.; Hohenester, U.; Molinari, E.; Lipsanen, H.; Tulkki, J.2000 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 in Journal of crystal growth (Elsevier)Tailoring of energy levels in strain-induced quantum dots
Ahopelto, Jouni; Sopanen, Markku; Lipsanen, Harri1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Trailoring of energy levels in strain-induced quantum dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Influence of Coulomb and Exchange Interaction on Quantum Dot Magnetoluninescence up to B = 45 T
Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Uchida, K.; Miura, N.; Arakawa, Y.1999 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)ISSN: 1862-6300Electron-hole correlation in quantum dots under a high magnetic field (up to 45T)
Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, Jukka; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.1999 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)ISSN: 0031-9007Effect of InP passivation on carrier recombination in InGaAs/GaAs surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandman, J.; Feldmann, J.1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Growth and optical properties of strain-induced quantum dots
Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.; Braskén, M.; Lindberg, M.1999 in PHYSICA SCRIPTA (IOP Publishing Ltd.)ISSN: 0031-8949Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1999 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1999 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Temperature dependence of carrier relaxation in strain-induced quantum dots
Brasken, M.; Lindberg, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.1998 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Magneto-optical properties of strain-induced InxGa1−xAs parabolic quantum dots
Rinaldi, R.; Mangino, R.; Cingolani, R.; Lipsanen, H.; Sopanen, Markku; Tulkki, J.; Brasken, M.; Ahopelto, J.1998 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Hybride vapour phase epitaxy for nanostructures
Rodriguez Messmer, E.; Lourdudoss, S.; Ahopelto, J.; Lipsanen, H.; Wesström, J.-O.; Hieke, K.; Reithmaier, J.P.; Kerkel, K.; Forchel, A.; Seifert, W.; Carlsson, N.; Samuelson, L.1998 in MATERIALS SCIENCE AND ENGINEERING B: ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (Elsevier BV)ISSN: 0921-5107Strain-induced quantum dot superlattice
Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.1998 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)ISSN: 1386-9477Strain-Induced Quantum Dots: Fabrication and Optical Properties
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.; Grosse, S.; Won Plessen, G.; Feldmann, J.; Hayes, G.; Philips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.1997 in Superlattices, Microstructures and Microdevices (Elsevier)Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriguez, E.; Höfling, E.; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.1997 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects
Grosse, S.; Sandman, J.; von Plessen, G.; Feldman, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1997 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Optical characterisation of self organised InGaAs/InP heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Sotomayor Torres, C.M.; Gontijo, I.; Buller, G.S.1997 in Institute of Physics Conference Series (AMER PHYSICAL SOC)Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Karilahti, M.; Tuomi, T.; Taskinen, M.; Tulkki, J.; Lipsanen, H.; McNally, P.1997 in Il Nuovo Cimento (AMER PHYSICAL SOC)Synchrotron X-raytopographic study of strain in silicon wafers with integrated circuits
Karilahti, M.; Tuomi, T.; Taskinen, M.; Tulkki, J.; Lipsanen, H.1997 in Il Nuovo Cimento (AMER PHYSICAL SOC)Hydride vapour phase epitaxy for nanostructures
Rodriquez, E.; Lourdudoss, S.; Ahopelto, J.; Lipsanen, H.; Wesström, J.-O.; Hieke, K.; Reithmaier, J.P.; Kerkel, K.; Forchel, A.; Seifert, W.; Calrsson, N.; Samuelson, L.1997 in JOURNAL OF MATERIALS SCIENCE AND ENGINEERING B (AMER PHYSICAL SOC)ISSN: 2161-6221Carrier relaxation in strain-induced (GaIn)As quantum dots
Sandman, J.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)ISSN: 1862-6300Ultrafast relaxation dynamics in strain-induced quantum dots
Sandman, J.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)ISSN: 0370-1972Self-Organized InAs Islands on (100) InP by Metalorganic Vapor-Phase Epitaxcy
Taskinen, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Tuomi, T.; Ahopelto, J.1997 in Surface Science (Elsevier)Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy
Taskinen, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Tuomi, T.; Ahopelto, J.1997 in Surface Science (Elsevier)ISSN: 0039-6028Metalorganic vapor phase epitaxial growth of A1GaSb and A1GaAsSb using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1996 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Enhanced optical properties of in situ passivated near-surface AlxGa1-xAs/GaAs quantum wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors
Lipsanen, H.; Sopanen, M.; Ahopelto, J.1996 in SOLID-STATE ELECTRONICS (Elsevier Limited)ISSN: 0038-1101Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs
McNally, P.; Tuomi, T.; Herbert, P.; Baric, A.; Äyräs, P.; Karilahti, M.; Lipsanen, H.; Tromby, M.1996 in IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0018-9383Zeeman effect in parabolic quantum dots
Rinaldi, R.; Guigno, P.; Cingolani, R.; Lipsanen, Harri; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)ISSN: 0031-9007Red luminescence from strain-induced GaInP quantum dots
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots
Lipsanen, H.; Sopanen, M.; Ahopelto, J.1995 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Optical Spectroscopy of Bragg Confined Transitions in a Superlattice with Multiquantum Barriers
Lipsanen, H.; Taskinen, K.; Airaksinen, V.M.1995 in SOLID STATE COMMUNICATIONS (PERGAMON-ELSEVIER SCIENCE LTD)ISSN: 0038-1098Recombination processes in strain-induced InGaAs quantum dots
Sandmann, J.; Grosse, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1995 in NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D: CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS (Editrice Compositori s.r.l.)ISSN: 0392-6737Growth of high-quality GaSb by metalorganic vapor phase epitaxy.
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Tuomi, T.1995 in JOURNAL OF ELECTRONIC MATERIALS (SPRINGER)ISSN: 0361-5235Strain-induced quantum dots by self-organized stressors
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Modeling, fabrication and characterization of 1.43 my m InGaAsP/InP separate confinement heterostructure multiple quantum-well lasers.
Taskinen, M.; Heinämäki, A.; Lipsanen, Harri; Tulkki, J.; Tuomi, T.1995 in OPTICAL ENGINEERING (SPIE)ISSN: 0091-3286Selective growth of InGaAs on nanoscale InP islands
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.; Niemi, H.1994 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Fabrication of Nanostructures using MBE and MOVPE
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.; Tuomi, T.; Airaksinen, V.M.; Sinkkonen, J.; Siren, E.1994 in PHYSICA SCRIPTA (IOP Publishing Ltd.)ISSN: 0031-8949Photoluminescene of buried InGaAs grown on nanoscale InP islands by MOVPE
Lipsanen, H.; Ahopelto, J.; Koljonen, T.; Sopanen, M.1994 in Journal of crystal growth (Elsevier)Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses
Lipsanen, H.K.; Airaksinen, V.M.1994 in JOURNAL OF ELECTRONIC MATERIALS (SPRINGER)ISSN: 0361-5235Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE
Lipsanen, H.; Ahopelto, J.; Koljonen, T.; Sopanen, M.1994 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Tuomi, T.1994 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Interference Effects in Photoreflectance of Epitaxial Layers Grown on Semi-insulating Substrates
Lipsanen, H.K.; Airaksinen, V.M.1993 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Photoreflectance study of photovoltage effects in GaAs diode structures
Airaksinen, V-M.; Lipsanen, H.K.1992 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951High-Speed InGaAsP/InP Multiple-Quantum-Well Laser
Lipsanen, H.; Coblentz, D.L.; Logan, R.A.; Yadvish, R.D.; Morton, P.A.; Temkin, H.1992 in IEEE PHOTONICS TECHNOLOGY LETTERS (Institute of Electrical and Electronics Engineers Inc.)ISSN: 1041-1135X-ray diffraction analysis of superlattices grown on misoriented substrates
Ravila, P.; Airaksinen, V. M.; Lipsanen, H.; Tuomi, T.; Claxton, P. A.1991 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Room-temperature observation of impurity states in bulk GaAs by photoreflectance
Pikhtin, A. N.; Airaksinen, V. M.; Lipsanen, H.; Tuomi, T.1989 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979OBSERVATION OF IMPURITY STATES IN HIGH-RESISTIVITY GALLIUM-ARSENIDE BY THE PHOTOREFLECTION METHOD
Pikhtin, A. N.; Airaksinen, V. M.; Lipsanen, H.; Tuomi, T.1989 in Soviet Physics - Semiconductors (American Institute of Physics Publising LLC)ISSN: 0038-5700Synchrotron section topographic study of defects in InP substrates and quaternary laser structures
Tuomi, T.; Lipsanen, H.; Ranta-aho, T.; Partanen, J.; Lahtinen, J. A.; Monberg, E.; Logan, R. A.1989 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Photoreflectance spectra of a GaAs/GaAs and of an InGaAs/InP multiple quantum well structures grown with molecular beam epitaxy
Tuomi, T.; Airaksinen, V. M.; Lipsanen, H.1989 in Acta Polytechnica Scandinavica, Electrical Engineering Series (Finnish Academies of Technology)ISSN: 0001-6845Review article, Literature review, Systematic reviewReview Article Recommended reading list of early publications on atomic layer deposition - Outcome of the "virtual Project on the History of ALD"
Ahvenniemi, Esko; Akbashev, Andrew R.; Ali, Saima; Bechelany, Mikhael; Berdova, Maria; Boyadjiev, Stefan; Cameron, David C.; Chen, Rong; Chubarov, Mikhail; Cremers, Veronique; Devi, Anjana; Drozd, Viktor; Elnikova, Liliya; Gottardi, Gloria; Grigoras, Kestutis; Hausmann, Dennis M.; Hwang, Cheol Seong; Jen, Shih Hui; Kallio, Tanja; Kanervo, Jaana; Khmelnitskiy, Ivan; Kim, Do Han; Klibanov, Lev; Koshtyal, Yury; Krause, A. Outi I.; Kuhs, Jakob; Kärkkänen, Irina; Kääriäinen, Marja Leena; Kääriäinen, Tommi; Lamagna, Luca; Łapicki, Adam A.; Leskelä, Markku; Lipsanen, Harri; Lyytinen, Jussi; Malkov, Anatoly; Malygin, Anatoly; Mennad, Abdelkader; Militzer, Christian; Molarius, Jyrki; Norek, Małgorzata; Özgit-Akgün, Çaǧla; Panov, Mikhail; Pedersen, Henrik; Piallat, Fabien; Popov, Georgi; Puurunen, Riikka L.; Rampelberg, Geert; Ras, Robin H A; Rauwel, Erwan; Roozeboom, Fred; Sajavaara, Timo; Salami, Hossein; Savin, Hele; Schneider, Nathanaelle; Seidel, Thomas E.; Sundqvist, Jonas; Suyatin, Dmitry B.; Törndahl, Tobias; Van Ommen, J. Ruud; Wiemer, Claudia; Ylivaara, Oili M E; Yurkevich, Oksana2017 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Extraction of Graphene-Titanium Contact Resistances Using Transfer Length Measurement and a Curve-Fit Method
Anteroinen, Johanna; Kim, Wonjae; Stadius, Kari; Riikonen, Juha; Lipsanen, Harri; Ryynänen, Jussi2012 in WORLD ACADEMY OF SCIENCE, ENGINEERING AND TECHNOLOGY (World Academy of Science Engineering and Technology)ISSN: 2010-376XBook section, Chapters in research booksTopography imaging of defects in GaAs on Ge
Lankinen, Aapo; Tuomi, Turkka; Knuuttila, Lauri; Kostamo, Pasi; Säynätjoki, Antti; Lipsanen, Harri; McNally, P.J.; lu, X.2006 Conference proceedingsMBE growth of nanowires using colloidal Ag nanoparticles
Bouravleuv, Alexei D.; Ilkiv, I. V.; Reznik, Rodion; Shtrom, I. V.; Khrebtov, A.I.; Samsonenko, Yu B.; Soshnikov, I. P.; Cirlin, George E.; Lipsanen, H.2017 in IOP Conference Series - Journal of Physics: Conference Series (IOP)ISSN: 1742-6588Low temperature and high quality atomic layer deposition HfO2 coatings
Perros, Alexander Pyymaki; Sippola, Perttu; Arduca, Elisa; Johansson, Leena Sisko; Lipsanen, Harri2017 ISBN: 9781538630556Integration of atomic layer deposited nanolaminates on silicon waveguides (Conference Presentation)
Autere, Anton; Karvonen, Lasse; Säynätjoki, Antti; Roussey, Matthieu; Rönn, John; Färm, Elina; Kemell, Marianna; Tu, Xiaoguang; Liow, Tsung-Yang; Lo, Patrick; Ritala, Mikko; Leskelä, Markku; Lipsanen, Harri; Honkanen, Seppo; Sun, Zhipei2016 in Proceedings of SPIE (Spie-int Soc Optical Engineering)ISBN: 9781510601369 ISSN: 0277-786XEnhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition
Rönn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016 in SPIE conference proceedings (SPIE)ISBN: 9781628419856ISSN: 0227-786XEfficient terahertz generation by ordered arrays of GaAs nanowires
Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A.; Rumyantsev, V. V.; Morozov, S. V.; Kuritsyn, D. I.; Cirlin, G. E.; Kakko, J. P.; Huhtio, T.; Lipsanen, H.2016 in International Conference on Infrared, Millimeter, and Terahertz Waves (IEEE COMPUTER SOCIETY PRESS)ISBN: 9781467384858ISSN: 2162-2027Fabrication of aligned carbon nanotube device and its application for polarization controlling
Fu, Bo; Yang, He; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Qingwen; Yang, Changxi; Tittonen, Ilkka; Lipsanen, Harri; Sun, Zhipei2014 Polarization dynamics control with aligned carbon nanotubes
Fu, Bo; Yang, He; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Qingwen; Yang, Changxi; Tittonen, Ilkka; Lipsanen, Harri; Sun, Zhipei2014 Effects of Zn doping on GaAs nanowires
Haggren, T.; Kakko, J. P.; Jiang, H.; Dhaka, V.; Huhtio, T.; Lipsanen, H.2014 ISBN: 978-1-4799-5622-7Reflectance measurements of triangular lattice GaAs nanowire arrays
Kakko, Joona Pekko; Haggrén, Tuomas; Huhtio, Teppo; Dhaka, Veer; Lipsanen, Harri2014 ISBN: 978-1-4799-5622-7Nanolaminate structures fabricated by ALD for reducing propagation losses and enhancing the third-order optical nonlinearities
Karvonen, Lasse; Alasaarela, Tapani; Jussila, Henri; Mehravar, Soroush; Chen, Ya; Säynätjoki, Antti; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Honkanen, Seppo; Lipsanen, Harri2014 in PRoceedings of SPIE (SPIE)ISBN: 9780819498953ISSN: 0277-786XGrowth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars
Subramaniyam, Nagarajan; Svensk, Olli; Amit, P.; Shah, Ali; Rahman, Azizur; Maliakkal, Carina B.; Bhattacharya, Arnab; Lipsanen, Harri; Sopanen, Markku2014 Radiation detectors fabricated on high-purity GaAs epitaxial materials
Wu, Xiaopeng; Kostamo, Pasi; Gädda, Akiko; Nenonen, Seppo; Riekkinen, Tommi; Härkönen, Jaakko; Salonen, Jaakko; Andersson, Hans; Zhilyaev, Yuri; Fedorov, Leonid; Eränen, Simo; Mattila, Marco; Lipsanen, Harri; Prunnila, Mika; Kalliopuska, Juha; Oja, Aarne2014 Fabrication of Large-Area Plasmonic Nanostructures for Surface Enhanced Fluorescence
Chen, Ya; Shah, Ali; Pale, Ville; Tittonen, Ilkka; Lipsanen, Harri2013 ISBN: 978-1-4799-0675-8Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate
Karvonen, L.; Säynätjoki, Antti; Dhaka, V.; Haggren, T.; Honkanen, S.; Mehravar, S.; Norwood, R.; Peyghambarian, N.; Lipsanen, H.; Kieu, K.2013 ISBN: 978-1-4799-0593-5Third-harmonic and multiphoton excitation fluorescence microscopy of single and few layer graphene
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Kim, Wonjae; Riikonen, Juha; Arpiainen, Sanna; Svensk, Olli; Li, Changfeng; Lipsanen, Harri2012 Electrical Properties of CVD-Graphene FETs
Anteroinen, Johanna; Kim, Wonjae; Stadius, Kari; Riikonen, Juha; Lipsanen, Harri; Ryynänen, Jussi2011 Rapid Thermal CVD of Graphene on Copper
Arpiainen, Sanna; Svensk, Olli; Kim, Wonjae; Kainlauri, Markku; Jiang, Hua; Lipsanen, Harri2011 Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization
Feng, T.; Xie, D.; Zang, Y.; Wu, X.; Luo, Y.; Ren, T.; Bosund, M.; Li, S.; Airaksinen, V.-M.; Lipsanen, H.; Honkanen, S.2011 ISBN: 978-1-4577-1998-1Growth and Characterization of GaP Layers on Silicon Substrates by MOVPE
Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2011 Nonlinear behavior of three terminal graphene junctions at room temperature
Kim, Wonjae; Pasanen, Pirjo; Riikonen, Juha; Rouvala, Markku; Lipsanen, Harri2011 Characteristics of InGaAs/GaAsN quantum dot solar cells.
Nagarajan, S.; Ali, M.; Mattila, P.; Jussila, H.; Aierken, A.; Sopanen, M; Lipsanen, H.2011 Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content
Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri2011 in AIP Conference Proceedings (AMER INST PHYSICS)ISSN: 0094-243XTemperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes
Rangel-Kuoppa, Victor-Tapio; Knuutila, Lauri; Sopanen, Markku; Lipsanen, Harri; Avila, Alejandro2011 in AIP Conference Proceedings (AIP)ISSN: 0094-243XSynchrotron Radiation X-Ray Topography and X-Ray Diffraction Investigation of Low Dislocation Density GaN
Sintonen, Sakari; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Tuomi, Turkka; Paulmann, Carsten2011 MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations
Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O; Shirazi, R; Lipsanen, Harri; Sopanen, Markku; Kardynal, B E2011 (GaMn)As nanowhiskers grown by molecular beam epitaxy
Bouravleuv, A.; Novikov, S.; Lebedeva, N.; Sibirev, N.; G.Cirlin, G.; Lipsanen, H.2010 Self-assembled InGaAs/GaAs quantum rings: Correlation of formation temperature and energy spectrum
Komkov, O.S.; Gordyushenkov, O.E.; Pikhtin, A.N.; Aierken, A.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2010 Circuits based on graphene transistors
Rouvala, Markku; Kim, Wonjae; Pasanen, Pirjo; Riikonen, Juha; Stadius, Kari; Ryynänen, Jussi; Lipsanen, Harri2010 Terahertz emission from GaN epilayers at lateral electric field
Shalygin, V.A.; Vorobjev, L.E.; Firsov, D.A.; Panevin, V.Yu.; Sofronov, A.N.; Melentyev, G.A.; Antonov, A.V.; Gavrilenko, V.I.; Suihkonen, S.; Törma, P.T.; Ali, M.; Lipsanen, H.2010 ISBN: 978-1-4244-6655-9Growth and characterization of InAsN/InAs multi quantum well for infrared device applications
Subramaniyam, Nagarajan; Mattila, Päivi; Aierken, Abuduwayiti; Jussila, Henri; Sopanen, Markku; Lipsanen, Harri2010 Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation
Völk, Stefan; Schülein, Florian J.R.; Knall, Florian; Wixforth, Achim; Krenner, Hubert J.; Laucht, Arne; Finley, Jonathan J.; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri; He, Jun; Truong, Tuan A.; Kim, Hyouchul; Petroff, Pierre M.2010 in Proceedings of SPIE (SPIE)ISBN: 978-0-8194-8006-4ISSN: 0277-786XMBE growth of MnP and GaMnAs nanowhiskers
Cirlin, G.E.; Sato, K.; Novikov, S.; Lebedeva, N.; Lipsanen, H.2009 Self-catalyzed growth of GaAs whiskers on GaAs and Al substartes
Cirlin, G.E.; Statkute, G.; Lipsanen, H.2009 Radiation Imaging Detectors
Nenonen, S.; Hannikainen, Diana; Orava, R.; Lipsanen, H.; Suni, I.; Elsevier, B.V2009 Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2009 in AIP Conference Proceedings (AIP)ISBN: 9780735407367ISSN: 0094-243XThe epitaxial growth on metals
Statkute, Gintare; Lipsanen, Harri2009 Amorphous silicon optical waveguides and Bragg mirrors
Khanna, A.; Mulot, M.; Arpiainen, S.; Säynätjoki, A.; Ahopelto, J.; Honkanen, S.; Lipsanen, H.2008 in Proceedings of SPIE (SPIE)ISBN: 9780819471949ISSN: 0277-786XPhotonic crystal waveguides with ring-shaped holes on silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 ISBN: 809780819471949ISSN: 0277-786xSlow-light photonic crystal waveguides with ring-shaped holes on silicon-on-insulator
Säynätjoki, Antti; Mulot, Mikaël; Vynck, Kevin; Cassagne, David; Ahopelto, Jouni; Lipsanen, Harri2008 in SPIE Proceedings (SPIE)ISBN: 9780819471949ISSN: 0277-786XNine-fold photoluminescence enhancement using photonic crystals with graphite lattice
Mulot, M.; Sihvonen, O.; Raineri, F.; Sagnes, I.; Vecchi, G.; Raj, R.; Lipsanen, H.2007 in CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS (IEEE)ISBN: 1-4244-0874-1ISSN: 1092-8669Broadband low group velocity in photonic crystal waveguides
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, S.; Ahopelto, J.; Lipsanen, Harri2007 In situ reflectance monitoring of thick GaAsN layers
Reentilä, Outi; Lankinen, Aapo; Säynätjoki, Antti; Mattila, Marco; Tuomi, Turkka; Lipsanen, Harri; "O'Reilly", Lisa; McNally, P.J.2006 Ge/GaAs heterostructures matrix detector
Kostamo, Pasi; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; Andersson, H.; Banzuzi, K.2005 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, M.; Sopanen, M.; Lipsanen, H.2005 in AIP Conference Proceedings (AIP)ISBN: 0735402574ISSN: 0094-243XPhotonic crystal slabs with ring-shaped holes in a triangular lattice
Mulot, Mikaël; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 ISBN: 0780392361High-index-contrast Optical Waveguides on Silicon
Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2005 in AIP Conference Proceedings (AIP)ISBN: 0735402574ISSN: 0094-243XGrowth parameter optimization for high nitrogen content Ga(In)NAs by MOVPE
Mattila, Marco; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri2004 Ga(In)NAs growth parameter optimization with low-pressure and atmospheric-pressure MOVPE systems
Reentilä, Outi; Mattila, Marco; Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2004 Applications of thin GaN layers in GaAs heterostuctures grown using DMHy
Sormunen, Jaakko; Riikonen, Juha; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2004 Synchrotron study of InSb, Ge, GaAs and InAs p-i-n detector materials and structures
Säynätjoki, Antti; Tuomi, Turkka; Lipsanen, Harri; Lankinen, Aapo; Kostamo, Pasi; Riikonen, Juha; Knuuttila, Lauri; Sormunen, Jaakko; Danilewski, A.2004 Integration of GaAs-based light emitter with poly-SOI
Riikonen, J.; Säynätjoki, A.; Lankinen, A.; Lipsanen, H.; Ahopelto, J.2002 Misfit dislocations in GaAsN-GaAs interface
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Chen, W.; Lowney, D.2002 Nanoscale Structures of Luminescent Polymers in Thin Films
Knaapila, Matti; Torkkeli, M.; Mäkelä, T.; Horsburgh, L.E.; Lindfors, K.; Koskenvaara, H.; Jokela, K.; Lipsanen, H.; Ahlskog, M.; Kaivola, M.; Serimaa, R.; Monkman, A.P.; ten Brinke, G.; Ikkala, Olli2001 Transient processes on strain-induced quantum dots in high magnetic field.
Lomascolo, M.; Pomarico, A.; Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.2001 in SPRINGER PROCEEDINGS IN PHYSICS (SPRINGER VERLAG)ISBN: 3-540-41778-8ISSN: 0930-8989High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Experimental determination of intra-lever relaxation time in quantum dots with different energy level spacing
Koskenvaara, H.; Sopanen, M.; Tulkki, J.; Lipsanen, H.; Braskén, M.; Lindberg, M.1999 Carrier relaxation in self-organized quantum dots: the effect of doping
Lipsanen, H.; Koskenvaara, H.; Toivonen, J.; Sopanen, M.; Ahopelto, J.1999 ISBN: 1-56677-245-1Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Grosse, S.; Feldman, J.; Karrai, K.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1999 Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Braskén, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.1999 The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Tulkki, Jukka1998 in INSTITUTE OF PHYSICS CONFERENCE SERIES (IOP PUBLISHING LTD)ISBN: 0-7503-0611-4ISSN: 0951-3248Tuning of energy levels in strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.1998 Photoluminescence study of passivated surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.1998 Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.1998 in IEEE CONFERENCE PROCEEDINGS (IEEE)ISBN: 0-7803-4220-8ISSN: 1092-8669High magnetic field effects on the optical properties of InGaAs parabolic quantum dots
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.1998 THz-Near Infrared upconversion in strain-induced quantum dots
Yusa, G.; Allen, J.; Sakaki, H.; Kono, J.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.1998 Terahertz(THz)-Near Infrated(NIR) Upconversion in strain-induced quantum dots
Yusa, G.; Allen, S.J.; Sakaki, H.; Kono, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.1998 Strain-induced quantum dots: fabrication and optical properties
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.1997 Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriquez, E.; Messmer, Höfling; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.1997 Self-organized growth of InAs islands on (100) Si by metalorganic vapor phase epitaxy
Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Strain-induced quantum dot superlattice
Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.1997 Untersuchung der Relaxationsdynamik optisch generierter Ladungsträger in verspannungsinduzierten InGaAs Quantenpunkten
Grosse, S.; Sandmann, J.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Optical characterization of self-organized InGaAs/GaAs heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.1996 Optical characterisation of self organised InGaAs/InP heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, Harri; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 ISBN: 0-7803-3283-0Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs Quantum Dots
Sandmann, J.; Grosse, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic and Atomic Zeeman Effects in Quantum Well Dots Induced by Coherent InP Islands
Tulkki, J.; Lipsanen, H.; Sopanen, M.; Brasken, M.; Lindberg, M.; Ahopelto, J.; Rinaldi, R.; Giugno, P.; Cingolani, R.1996 Optical properties of self-organized InGaAs/InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.1995 ISBN: 0-7803-2147-2Self-organizing growth of InGaAs on nanoscale InP islands
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.1994 Self-organising growth of nanoscale heterostructures: Selective growth of InGaAs on InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Niemi, H.E.-M.1994 Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy
Hjelt, Kari T.; Sopanen, Markku A.; Lipsanen, Harri K.; Tuomi, Turkka O.; Hasenohrl, Stanisla1993 in MRS Proceedings (Materials Research Society MRS)ISBN: 1558991972ISSN: 0272-9172Liquid phase epitaxial growth of GaSb layers from Ga- and Sn-rich melts
Koljonen, T.; Sopanen, M.; Hjelt, K.; Lipsanen, H.; Tuomi, T.1993 Study of direct to indirect transition in GaAs/AlAs superlattices
Lipsanen, H.K.; Airaksinen, V.M.; Tuomi, T.1993 Photoluminescence of GaSb wafers and LPE grown layers
Sopanen, M.; Hjelt, K.; Koljonen, T.; Lipsanen, H.; Koponen, M.; Tuomi, T.1993 Optical detection of electric fields in GaAs structures
Airaksinen, V.M.; Lipsanen, H.K.1992 Accurate determination of the layer thicknesses of a GaAs/AlAs superlattice
Lipsanen, H.K.; Airaksinen, V-M.; Tuomi, T.1992 Photoreflectance studies InGaAs/InP superlattices
Airaksinen, V. M.; Lipsanen, H. K.; Ravila, P.; Tuomi, T.; Claxton, P. A.1990 in SPIE Proceedings (SPIE)ISBN: 0819403377Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low field transverse electroreflectance
Lipsanen, H. K.; Airaksinen, V. M.; Tuomi, T.; Claxton, P. A.1990 in SPIE Proceedings (SPIE)ISBN: 0819403377Non-refereed scientific articles
Unrefereed journal articlesSubstrate-patterning techniques for nitride growth
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.2010 in SPIE Newsroom, Displays and Illumination (SPIE)Unrefereed conference proceedingsDirect comparison of second and third harmonic generation in mono- and few-layer MX2 (M=Mo, W; X=S, Se) by multiphoton microscope
Autere, Anton; Säynätjoki, Antti; Karvonen, Lasse; Amirsolaimani, Babak; Jussila, Henri; Yang, He; Norwood, Robert A.; Peyghambarian, Nasser; Lipsanen, Harri; Kieu, Khanh; Sun, Zhipei2016 in Conference on Lasers and Electro-Optics (Institute of Electrical and Electronics Engineers Inc.)ISBN: 9781943580118ISSN: 2160-9020Nonlinear microscopy of nano-objects using excitation beam profiles with engineered phase jumps
Turquet, L.; Kakko, J. P.; Karvonen, Lasse; Jiang, H.; Isotalo, T. J.; Huhtio, T.; Niemi, T.; Kauppinen, E.; Lipsanen, H.; Kauranen, M.; Bautista, G.2016 in Conference on Lasers and Electro-Optics (Institute of Electrical and Electronics Engineers Inc.)ISBN: 9781943580118ISSN: 2160-9020Second harmonic generation imaging of vertically aligned GaAs nanowires
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Huttunen, Mikko; Karvonen, Lasse; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2014 Broadband polarization dynamics control with aligned carbon nanotubes
Fu, Bo; Yang, He; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Qingwen; Yang, Changxi; Tittonen, Ilkka; Lipsanen, Harri; Sun, Zhipei2014 Investigation of optical nonlinearities in graphene and layered semiconductors by multiphoton microscopy
Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Riikonen, Juha; Peyghambarian, Nasser; K.Kieu, Khanh; Lipsanen, Harri2014 Investigation of optical nonlinearities in few-layer gallium selenide by multiphoton microscopy
Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Rodriquez, Raul D.; Hartmann, Susanne; Zahn, Dietrich R.T.; Honkanen, Seppo; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri; Riikonen, Juha2014 Toward efficient graphene fabrication and ultrafast characterization
Riikonen, Juha; Kim, Kim; Li, Changfeng; Säynätjoki, Antti; Karvonen, Lasse; Lipsanen, Harri2014 Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer
Aierken, A.; Nagarajan, S.; Huhtio, T.; Sopanen, M.; Lipsanen, H.2011 Publications intended for professional communities
Article in professional journalPlasma aateloi ALD:n
Bosund, Markus; Hakkarainen, Teppo; Lipsanen, Harri; Airaksinen, Veli-Matti; Putkonen, Matti2009 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121GROI-kiekkoja anturisovelluksiin
Arpiainen, Sanna; Kainlauri, Markku; Ahopelto, Jouni; Kim, Wonjae; Lipsanen, Harri2008 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
Tulkki, J.; Lipsanen, H.; Sopanen, M.2004 in Artec House (Institute of Electrical and Electronics Engineers Inc.)Article in professional conference proceedingsProperties of GaAs nanowires grown on low-cost glass substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires
Haggren, Tuomas; Dhaka, Veer; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Controlling gold nanoparticle densities on electrode surfaces by combination of self assembly and electron beam lithography
Toikkanen, O.; Doan, N.; Erdmanis, M.; Lipsanen, H.; Parviz, B.; Kontturi, K.2010 Published development or research reportNonlinear imaging of vertically aligned semiconductor nanowires using focused vector beams
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Karvonen, Lasse; Jiang, Hua; Huttunen, Mikko; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Second and third harmonic generation in few-layer gallium telluride by multiphoton microscopy
Susoma, Jannatul; Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Kahn; Lipsanen, Harri; Riikonen, Juha2015 Multiphoton Characterization of Two-Dimensional Layered Materials
Säynätjoki, Antti; Karvonen, Lasse; Riikonen, Juha; Kim, Wonjae; Mehravar, Soroush; Norwood, Robert; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri2015 Tunable nonlinear effects through focused spatially phase-shaped beams
Turquet, Leo; Bautista, Godofredo; Karvonen, Lasse; Dhaka, Veer; Chen, Ya; Jiang, Hua; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Water Mist-induced Parallel Self-alignment of Microchips on Hydrophilic/Super-hydrophobic Nanostructured Surface
Chang, Bo; Shah, Ali; Lipsanen, Harri; Zhou, Quan2014 Properties of AlN Film Grown by Plasma Enhanced Atomic Layer Deposition
Bosund, M.; Putkonen, Matti; Sajavaara, T.; Laitinen, M.; Huhtio, T.; Airaksinen, V-M.; Lipsanen, H.2011 Photonic crystals with ring-shaped holes on silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 Self-catalyzed growth and properties of InP nanowires
Mattila, M.; Hakkarainen, T.; Lipsanen, H.; Jiang, H.; Kauppinen, E.2007 Reduction of threading dislocation density in AlGaN epilayers by a multistep technique
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Lipsanen, Harri2006 In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 In-situ composition determination of MOVPE grown InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 Hydrogen treatment of InGaN/GaN MQW structures
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Törmä, Pekka; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Magnesium doping of group-III nitrides for LED- and laser structures
Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Inductively coupled plasma etching of III-nitride based laser structure using CI2/BCI3/Ar gasses
Törmä, Pekka; Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, V.E.; Bougrov, V.E.2006 Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy
Knuuttila, Lauri; Lankinen, Aapo; Lipsanen, Harri2005 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 Low air-fill-factor photonic crystals with ring-shaped holes in a triangular lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Photonic Crystal Slabs with Ring-Shaped holes in a Triangular Lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Säynätjoki, Antti; Kostamo, Pasi; Sormunen, Jaakko; Riikonen, Juha; Lankinen, Aapo; Lipsanen, Harri; Andersson, H.; Banzuzi, K.; Nenonen, S.; Sipilä, H.; Vaijärvi, S.2005 Characterization of photonic crystal waveguides fabricated in silicon-on-insulator
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2005 Characterization of photonic crystal waveguides using Fabry-Perot resonances
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
Riikonen, J.; Tuomi, T.; Lankinen, A.; Sormunen, J.; Säynätjoki, A.; Knuuttila, L.; Lipsanen, H.; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy
Riikonen, Juha; Tuomi, Turkka; Lankinen, Aapo; Sormunen, Jaakko; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 High-index-contrast Optical Weveguides on Silicon
Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2004 Optical waveguides on polysilicon-on-insulator
Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri2003 Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 In (Ga)As quantum dots on Ge substrate
Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.2002 Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.2002 Optical waveguides on polysilicon-on-insulator
Säynätjoki, A.; Riikonen, J.; Reentilä, O.; Lipsanen, H.; Ahopelto, J.2002 Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Effect of growth conditions on the defect transitions in Ga(In)NAs
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Growth and optical properties of GaInNAs quantum wells
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2001 Epitaxial growth of GaAs on silicon-on-ilsulator
Riikonen, J.; Knuuttila, L.; Tuomi, T.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.2001 Growth and defects of GaAsN layers on GaAs
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.2001 Optoelectronics Laboratory Activity Report 1996-1999
Collan, H.; Lipsanen, H.; Rantamäki, R.; Tuomi, T.2000 High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.1997 Ultrafast relaxation dynamics in strain-induced quantum dots
Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Karilahti, M.; Tuomi, T.; Taskinen, M.; Tulkki, J.; Lipsanen, H.; McNally, P.1996 In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic Zeeman effect in parabolic quantum dots
Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.1996 Optical properties of self-organized InGaAs/InP dots.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication, characterization and modelling of stain-induced quantum dots.
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.1995 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
Lipsanen, H.; Sopanen, M.1995 InGaAs quantum dots induced by self-organized InP stressors.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.
Lipsanen, H.; Salo, T.; Tuomi, T.1995 Recombination processes in strain-induced InGaAs quantum dots.
Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.1995 Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.
Taskinen, M.; Heinämäki, A.; Lipsanen, H.; Tulkki, J.; Tuomi, T.1995 Synchrotron X-ray topographic studies of strain in silicon wafers with integrated circuits.
Tuomi, T.; Karilahti, M.; Äyräs, P.; Lipsanen, H.; McNally, P.1995 Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1994 X-ray diffraction study of GaSb on GaAs grown by MOVPE
Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.1994 Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells
Lipsanen, H.1994 Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates
Lipsanen, H.K.; Airaksinen, V.M.1994 Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.1994 MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.1994 MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.1994 Metallo organic vapour phase epitaxy of III-V semiconductors
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.1994 The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1993 Accurate determination of the layer thicnesses of a GaAs/AlAs superlattice
Lipsanen, H.K.; Tuominen, M.; Airaksinen, V.M.1993 Photoreflectance of Bragg confined transitions in a superlattice with multiquantum barries
Lipsanen, H.K.; Airaksinen, V.M.; Taskinen, K.1993 Metallo-organic vapor phase system
Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.1993 Photoreflectance study of photovoltage effects in GaAs diode structures
Airaksinen, V.M.; Lipsanen, H.K.1992 Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.1992 Liquid phase epitaxial (LPE) technique
Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.1992 High Speed InGaAsP/InP multiple quantum well laser
Lipsanen, H.K.; Coblenz, D.L.; Logan, R.A.; Yadvish, R.D.; Morton, P.A.; Temkin, H.1992 Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers
Rönn, John; Karvonen, Lasse; Pyymaki-Perros, Alexander; Peyghambarian, Nasser N.; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016
I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide
Rapid and Large-Area Characterization of Exfoliated Black Phosphorus Using Third-Harmonic Generation Microscopy
Nonlinear microscopy using cylindrical vector beams Applications to three-dimensional imaging of nanostructures
Detection of raman scattering spectra of high spectral resolution in short oligonucleotides Compared with the full-length DNA spectra
Young's Modulus of Wurtzite and Zinc Blende InP Nanowires
Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties
New Approach for Thickness Determination of Solution-Deposited Graphene Thin Films
Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy
Direct transfer of Wafer-scale graphene films
Corrosion protection of steel with multilayer coatings: Improving the sealing properties of physical vapor deposition CrN coatings with Al2O3/ TiO2 atomic layer deposition nanolaminates
Graphene actively Q-switched lasers
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K
Spontaneous and stimulated emission in InAsSb-based LED heterostructures
Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers
Probing the longitudinal electric field of Bessel beams using second-harmonic generation from nano-objects
Tailorable second-harmonic generation from an individual nanowire using spatially phase-shaped beams
Nonlinear imaging of nanostructures using beams with binary phase modulation
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition Growth and mechanical properties
Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition
Growth and properties of self-catalyzed (In,Mn)As nanowires
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
Protective capping and surface passivation of III-V nanowires by atomic layer deposition
Synthesis and properties of ultra-long InP nanowires on glass
Pavir šiaus pasyvacijos įtakos pavieni ų GaAs nanovam zdeli ų elektrinėms savyb ėms tyrimas matuojant srov ės priklausomybę nue įtampos atominės mikroskopu
Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode
Lithography-free shell-substrate isolation for core-shell GaAs nanowires
Optical characterization of directly deposited graphene on a dielectric substrate
Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires
A technique for large-area position-controlled growth of GaAs nanowire arrays
Tunable Graphene-GaSe Dual Heterojunction Device
Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
Black phosphorus polycarbonate polymer composite for pulsed fibre lasers
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern
Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures
Atomic layer engineering of Er-ion distribution in highly doped Er:Al2O3 for photoluminescence enhancement
Pyrolytic carbon coated black silicon
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy
Resonant features of the terahertz generation in semiconductor nanowires
Slot waveguide ring resonators coated by an atomic layer deposited organic/inorganic nanolaminate
Second-harmonic generation imaging of semiconductor nanowires by focused vector beams
A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data
Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals
Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope
Solubility of Boron, Carbon, and Nitrogen in Transition Metals: Getting Insight into Trends from First-Principles Calculations
Fabrication of Dual-Type Nanowire Arrays on a Single Substrate
Investigation of second- and third-harmonic generation in few-layer gallium selenide by multiphoton microscopy
All-Graphene Three-Terminal Junction Field-Effect Devices as Rectifiers and Inverters
Polarization and thickness dependent absorption properties of black phosphorus New saturable absorber for ultrafast pulse generation
Nanotribological, nanomechanical and interfacial characterization of Atomic Layer Deposited TiO2 on a silicon substrate
Edge effect modeling and study for three-chip RGB light-emitting diodes
Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates
Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices
Generation of terahertz radiation in ordered arrays of GaAs nanowires
The effect of resonant Mie absorption under THz radiation emission in semiconductor nanowires
Processing and characterization of epitaxial GaAs radiation detectors
Broadband laser polarization control with aligned carbon nanotubes
High-resolution Raman scattering in oligonucleotides
High-resolution Raman scattering in oligonucleotides
Detection of high-resolution Raman spectra in short oligonucleotides
Resonant raman scattering in complexes of nc-Si/SiO2 quantum dots and oligonucleotides
Functionalization of nc-Si/SiO2 semiconductor quantum dots by oligonucleotides
Corrigendum Exceptionally strong and robust millimeterscale graphene-alumina composite (Nanotechnology (2014) 25, (355701))
Exceptionally strong and robust millimeter-scale graphenealumina composite membranes
Low-height sharp edged patterns for capillary self-alignment assisted hybrid microassembly
Improved SERS Intensity from Silver Coated Black Silicon by Tuning Surface Plasmons
Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers
Photo-induced electron transfer at nanostructured semiconductorzinc porphyrin interface
Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys
Impact of ALD grown passivation layers on silicon nitride based integrated optical devices for very-near-infrared wavelengths
Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
Leakage currents of large area InP/InGaAs heterostructures
Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.
Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography
X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers
Defect structure of a free standing GaN wafer grown by the ammonothermal method
Stress distribution in GaN nanopillars using confocal Raman mapping technique
Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD
Ultrafast Carrier Dynamics In GaAs Nanowires
Performance and Properties of Ultra-Thin Silicon Nitride X-ray Windows
Radiation detectors fabricated on high-purity GaAs epitaxial materials
Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Electrical detection of picosecond acoustic pulses in vertical transport devices with nanowires
High quality crystallinity controlled ALD TiO2 for waveguiding applications
Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy
New method of determining the Young’s modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope
Aluminum-Induced Photoluminescence Red Shifts in CoreShell GaAs/AlxGa1xAs Nanowires
GaAs nanowires grown on Al-doped ZnO buffer layer
Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography
Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor
Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures
Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
Photo-thermal chemical vapor deposition of graphene on copper
Surface-Tension-Driven Self-Alignment of Microchips on Black-Silicon-Based Hybrid Template in Ambient Air
Strain-compensated GaPN/GaP heterostructure on (0?0?1) silicon substrates for intermediate band solar cells
Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
Analysis of Dislocations Generated during MetalOrganic Vapor Phase Epitaxy of GaN on Patterned Templates
Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates
Fabrication of GaN Structures with Embedded Network of Voids Using Pillar Patterned GaN Templates
Rapid Large-Area Multiphoton Microscopy for Characterization of Graphene
Ultra-Thin Silicon Nitride X-Ray Windows
Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning
Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN
Formation of (Ga,Mn)As Nanowires and Study of their Magnetic Properties
Surface-tension driven self-assembly of microchips on hydrophobic receptor sites with water using forced wetting
High Quality GaAs Nanowires Grown on Glass Substrates
Growth and characterization of GaP layers on silicon substrates by metal-organic vapour phase epitaxy
Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis
High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Nonlinear behavior of three-terminal graphene junctions at room temperature
Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes
Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
The Effect of Atomic-Layer-Deposited AlN on Near Surface InGaAs/GaAs Structures
Graphene-enhanced Raman imaging of TiO2 nanoparticles
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF(6) based plasmas
Synthesis of ZnO tetrapods for flexible and transparent UV sensors
Self-Assembled Porphyrins on Modified Zinc Oxide Nanorods: Development of Model Systems for Inorganic-Organic Semiconductor Interface Studies
Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN
Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells
MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations,
Photovoltaic properties of GaAsP coreshell nanowires on Si(001) substrate
Void shape control in GaN re-grown on hexagonally patterned mask-less GaN
Properties of AlN grown by plasma enhanced atomic layer deposition
Capillary-driven self-assembly of microchips on oleophilic/oleophobic patterned surface using adhesive droplet in ambient air
”TlBr purification and single crystal growth for the detector applications
A single-pixel wireless contact lens display
Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer
X-ray diffraction study of GaN grown on patterned substrates
Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode
Patterning of sapphire / GaN substrates
Building molecular surface gradients with electron beam lithography
Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC (0001)
ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION
Influence of substrate temperature on the shape of GaAs nanowires grown by Auassisted MOVPE
Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry
Emission of Terahertz Radiation from GaN under Impact Ionization of Donors in an Electric Field
Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements
GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors
InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates
Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation
Atomic layer deposition of ytterbium oxide using ß-diketonate and ozone precursors
Characterization of TlBr for X-ray and γ-ray detector applications
Improvements and problems of Bridgman-Stockbarger method for fabrication of TlBr single crystal detectors
Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge
Fabrication and optical properties of metal-coated non-close-packed colloidal crystals
Mechanistic investigation of ZnO nanowire growth
Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Cascaded exciton emission of an individual strain-induced quantum dot
Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field
An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE
Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy
Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures
Passivation of GaAs surface by atomic-layer-deposited titanium nitride
Carrier dynamics in strain induced quantum dots modeled by rate equations and Gaussian excitation beam distribution
GaAs Medipix2 hybrid pixel detector
Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p-i-n structures
X-ray excited optical luminescence of Mg-doped GaN
In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer
Efficient light coupling into a photonic crystal waveguide with flatband slow mode
Properties, applications and fabrication of photonic crystals with ring-shaped holes in silicon-on-insulator
Novel method for error limit determination in x-ray reflectivity analysis
GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exhange
Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)
Noncovalent attachment of pyro-Pheophorbide a to a carbon nanotube
Reduction of threading dislocation density in A1_(0.12)Ga_(0.88)N epilayers by a multistep technique
Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique
Catalyst-free fabrication of InP and InP(N) nanowires by metal organic vapor phase epitaxy
Enhanced luminescence from catalyst-free grown InP nanowires
Effect of substrate orientation on the catalyst-free growth of InP nanowires
Slow light propagation in photonic crystal waveguides with ring-shaped holes
Tensile-strained GaAsN quantum dots on InP
Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells
In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization of GaN LED efficiency
The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
Effect of growth conditions on electrical properties of Mg-doped p-GaN
Dispersion engineering of photonic crystal waveguides with ring-shaped holes
Genetic algorithm using independent component analysis in x-ray reflectivity curve fitting of periodic layer structures
Fitness function and nonunique solutions in x-ray reflectivity curve fitting: crosserror between surface roughness and mass density
Accuracy in x-ray reflectivity analysis
Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells
Experimental investigation towards a periodically pumped single-photon source
Comparison of Ge and GaAs substrates for metalorganic vapor phase epitaxy of GaIn(N)As quantum wells
Carrier dynamics in strain-induced InGaAsP/InP quantum dots
Ge/GaAs heterostructure matrix detector
Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers
Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique
Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge
Catalyst-free growth of In(As)P nanowires on silicon
Crystal-structure-dependent photoluminescence from InP nanowires
Metal contacts on InN Proposal for Schottky contact
In-situ determination of nitrogen content in InGaAsN quantum wells
Nitrogen content of GaAsN quantum wells by in-situ monitoring during MOVPE growth
Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring
Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots
Characterization of photonic crystal waveguides using Fabry-Pérot resonances
InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Nonlinear fitness–space–structure adaptation and principal component analysis in genetic algorithms: an application to x-ray reflectivity analysis
Low Tempereture Growth GaAs on Ge
Low temperature growth GaAs on Ge
Synchrotron x-ray topographic study of dislocations and stacking faults in InAs
Highly Tunable Emission from Strain-Induced InGasp/InP Quantum Dots
Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
InGaAs/InP quantum dots induced by self-organized InAs stressors-islands
Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAS(P)/InP
Transformation of Self-Assembled InAs/InP Quantum Dots into Quantum Rings without Capping
Structural and optical properties of GaInNAs/GaAs quantum structures
Self assembled In(Ga)As islands on Ge substrate
The morphology of an InP wettig layer on GaAs
Valolla vauhtia viestintään
Passivation of GaAS surface by ultrathin epitaxial GaN layer
Morphology of ultra-thin cubic GaN layers on GaAs(100) grown by MOVPE with DMHy as nitrogen source
GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor
Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs
In(Ga)As quantum dots on Ge substrate
Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Growth of GaAs on polycrystalline silicon-on-insulator
Optical waveguides on polysilicon-on-insulator
Misfit dislocations in GaAsN/GaAs interface
Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells
Observation of defect complexes containing Ga vacancies in GaAsN
GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy
Pumping of quantum dots with surface acoustic waves
Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm
Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys
Correlation effects in strain-induces quantum dots
Longitudinal Stark effect in parabolic quantum dots
Correlation effects in strain-induced quantum dots
Influence of Coulomb and exchange interation on quantum dot magnetoluminescence up to B=45T
Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45 T)
Influence on coulomb and exhange interaction on quantum dot magnetoluminescence up to 45 t.
Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures
Effects of a few-particle interaction on the atomiclike levels of a single strain-induced quantum dot
High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy
Tailoring of energy levels in strain-induced quantum dots
Trailoring of energy levels in strain-induced quantum dots
Influence of Coulomb and Exchange Interaction on Quantum Dot Magnetoluninescence up to B = 45 T
Electron-hole correlation in quantum dots under a high magnetic field (up to 45T)
Effect of InP passivation on carrier recombination in InGaAs/GaAs surface quantum wells
Growth and optical properties of strain-induced quantum dots
Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Temperature dependence of carrier relaxation in strain-induced quantum dots
Magneto-optical properties of strain-induced InxGa1−xAs parabolic quantum dots
Hybride vapour phase epitaxy for nanostructures
Strain-induced quantum dot superlattice
Strain-Induced Quantum Dots: Fabrication and Optical Properties
Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects
Optical characterisation of self organised InGaAs/InP heterodots
Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Synchrotron X-raytopographic study of strain in silicon wafers with integrated circuits
Hydride vapour phase epitaxy for nanostructures
Carrier relaxation in strain-induced (GaIn)As quantum dots
Ultrafast relaxation dynamics in strain-induced quantum dots
Self-Organized InAs Islands on (100) InP by Metalorganic Vapor-Phase Epitaxcy
Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy
Metalorganic vapor phase epitaxial growth of A1GaSb and A1GaAsSb using all-organometallic sources
Enhanced optical properties of in situ passivated near-surface AlxGa1-xAs/GaAs quantum wells
Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors
Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs
Zeeman effect in parabolic quantum dots
Red luminescence from strain-induced GaInP quantum dots
Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching
Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots
Optical Spectroscopy of Bragg Confined Transitions in a Superlattice with Multiquantum Barriers
Recombination processes in strain-induced InGaAs quantum dots
Growth of high-quality GaSb by metalorganic vapor phase epitaxy.
Strain-induced quantum dots by self-organized stressors
Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.
Modeling, fabrication and characterization of 1.43 my m InGaAsP/InP separate confinement heterostructure multiple quantum-well lasers.
Selective growth of InGaAs on nanoscale InP islands
Fabrication of Nanostructures using MBE and MOVPE
Photoluminescene of buried InGaAs grown on nanoscale InP islands by MOVPE
Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses
Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE
Growth of GaInAsSb using tertiarybutylarsine as arsenic source
Interference Effects in Photoreflectance of Epitaxial Layers Grown on Semi-insulating Substrates
Photoreflectance study of photovoltage effects in GaAs diode structures
High-Speed InGaAsP/InP Multiple-Quantum-Well Laser
X-ray diffraction analysis of superlattices grown on misoriented substrates
Room-temperature observation of impurity states in bulk GaAs by photoreflectance
OBSERVATION OF IMPURITY STATES IN HIGH-RESISTIVITY GALLIUM-ARSENIDE BY THE PHOTOREFLECTION METHOD
Synchrotron section topographic study of defects in InP substrates and quaternary laser structures
Photoreflectance spectra of a GaAs/GaAs and of an InGaAs/InP multiple quantum well structures grown with molecular beam epitaxy
Review Article Recommended reading list of early publications on atomic layer deposition - Outcome of the "virtual Project on the History of ALD"
Extraction of Graphene-Titanium Contact Resistances Using Transfer Length Measurement and a Curve-Fit Method
Book section, Chapters in research booksTopography imaging of defects in GaAs on Ge
Lankinen, Aapo; Tuomi, Turkka; Knuuttila, Lauri; Kostamo, Pasi; Säynätjoki, Antti; Lipsanen, Harri; McNally, P.J.; lu, X.2006 Conference proceedingsMBE growth of nanowires using colloidal Ag nanoparticles
Bouravleuv, Alexei D.; Ilkiv, I. V.; Reznik, Rodion; Shtrom, I. V.; Khrebtov, A.I.; Samsonenko, Yu B.; Soshnikov, I. P.; Cirlin, George E.; Lipsanen, H.2017 in IOP Conference Series - Journal of Physics: Conference Series (IOP)ISSN: 1742-6588Low temperature and high quality atomic layer deposition HfO2 coatings
Perros, Alexander Pyymaki; Sippola, Perttu; Arduca, Elisa; Johansson, Leena Sisko; Lipsanen, Harri2017 ISBN: 9781538630556Integration of atomic layer deposited nanolaminates on silicon waveguides (Conference Presentation)
Autere, Anton; Karvonen, Lasse; Säynätjoki, Antti; Roussey, Matthieu; Rönn, John; Färm, Elina; Kemell, Marianna; Tu, Xiaoguang; Liow, Tsung-Yang; Lo, Patrick; Ritala, Mikko; Leskelä, Markku; Lipsanen, Harri; Honkanen, Seppo; Sun, Zhipei2016 in Proceedings of SPIE (Spie-int Soc Optical Engineering)ISBN: 9781510601369 ISSN: 0277-786XEnhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition
Rönn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016 in SPIE conference proceedings (SPIE)ISBN: 9781628419856ISSN: 0227-786XEfficient terahertz generation by ordered arrays of GaAs nanowires
Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A.; Rumyantsev, V. V.; Morozov, S. V.; Kuritsyn, D. I.; Cirlin, G. E.; Kakko, J. P.; Huhtio, T.; Lipsanen, H.2016 in International Conference on Infrared, Millimeter, and Terahertz Waves (IEEE COMPUTER SOCIETY PRESS)ISBN: 9781467384858ISSN: 2162-2027Fabrication of aligned carbon nanotube device and its application for polarization controlling
Fu, Bo; Yang, He; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Qingwen; Yang, Changxi; Tittonen, Ilkka; Lipsanen, Harri; Sun, Zhipei2014 Polarization dynamics control with aligned carbon nanotubes
Fu, Bo; Yang, He; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Qingwen; Yang, Changxi; Tittonen, Ilkka; Lipsanen, Harri; Sun, Zhipei2014 Effects of Zn doping on GaAs nanowires
Haggren, T.; Kakko, J. P.; Jiang, H.; Dhaka, V.; Huhtio, T.; Lipsanen, H.2014 ISBN: 978-1-4799-5622-7Reflectance measurements of triangular lattice GaAs nanowire arrays
Kakko, Joona Pekko; Haggrén, Tuomas; Huhtio, Teppo; Dhaka, Veer; Lipsanen, Harri2014 ISBN: 978-1-4799-5622-7Nanolaminate structures fabricated by ALD for reducing propagation losses and enhancing the third-order optical nonlinearities
Karvonen, Lasse; Alasaarela, Tapani; Jussila, Henri; Mehravar, Soroush; Chen, Ya; Säynätjoki, Antti; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Honkanen, Seppo; Lipsanen, Harri2014 in PRoceedings of SPIE (SPIE)ISBN: 9780819498953ISSN: 0277-786XGrowth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars
Subramaniyam, Nagarajan; Svensk, Olli; Amit, P.; Shah, Ali; Rahman, Azizur; Maliakkal, Carina B.; Bhattacharya, Arnab; Lipsanen, Harri; Sopanen, Markku2014 Radiation detectors fabricated on high-purity GaAs epitaxial materials
Wu, Xiaopeng; Kostamo, Pasi; Gädda, Akiko; Nenonen, Seppo; Riekkinen, Tommi; Härkönen, Jaakko; Salonen, Jaakko; Andersson, Hans; Zhilyaev, Yuri; Fedorov, Leonid; Eränen, Simo; Mattila, Marco; Lipsanen, Harri; Prunnila, Mika; Kalliopuska, Juha; Oja, Aarne2014 Fabrication of Large-Area Plasmonic Nanostructures for Surface Enhanced Fluorescence
Chen, Ya; Shah, Ali; Pale, Ville; Tittonen, Ilkka; Lipsanen, Harri2013 ISBN: 978-1-4799-0675-8Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate
Karvonen, L.; Säynätjoki, Antti; Dhaka, V.; Haggren, T.; Honkanen, S.; Mehravar, S.; Norwood, R.; Peyghambarian, N.; Lipsanen, H.; Kieu, K.2013 ISBN: 978-1-4799-0593-5Third-harmonic and multiphoton excitation fluorescence microscopy of single and few layer graphene
Säynätjoki, Antti; Karvonen, Lasse; Riikonen, J.; Kim, W.; Mehravar, S.; Norwood, R.; Peyghambarian, N.; Lipsanen, H.; Kieu, K.2013 ISBN: 978-1-4799-0593-5Carriers transport in GaAs nanowires
Trukhin, V. N.; Buravlev, A. D.; Dhaka, V.; Cirlin, G. E.; Mustafin, I. A.; Kaliteevski, M. A.; Lipsanen, H.; Samoilov, L. L.; Samsonenko, Yu B.2013 ISBN: 9781467347174High-Performance Large-Area Ultra-Thin X-ray Window
Törmä, Pekka Tuomas; Sipilä, Heikki; Mattila, Marco; Kostamo, Pasi; Kostamo, Jari; Kostamo, Esa; Lipsanen, Harri; Nelms, Nick; Shortt, Brian; Bavdaz, Marcos; Laubis, Christian2013 Graphene for Gigahertz Applications
Anteroinen, Johanna; Kim, Wonjae; Stadius, Kari; Riikonen, Juha; Lipsanen, Harri; Ryynänen, Jussi2012 ISBN: 978-9949-23-265-9Structural study of crystal defects in thin GaP layers on (100) silicon substrates by X-ray diffraction
Jussila, Henri; Subramaniyam, Nagarajan; Sintonen, Sakari; Huhtio, Teppo; Tuomi, Turkka O.; Lipsanen, Harri; Sopanen, Markku2012 Growth of CVD graphene on copper by rapid thermal processing
Kim, Wonjae; Riikonen, Juha; Arpiainen, Sanna; Svensk, Olli; Li, Changfeng; Lipsanen, Harri2012 Electrical Properties of CVD-Graphene FETs
Anteroinen, Johanna; Kim, Wonjae; Stadius, Kari; Riikonen, Juha; Lipsanen, Harri; Ryynänen, Jussi2011 Rapid Thermal CVD of Graphene on Copper
Arpiainen, Sanna; Svensk, Olli; Kim, Wonjae; Kainlauri, Markku; Jiang, Hua; Lipsanen, Harri2011 Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization
Feng, T.; Xie, D.; Zang, Y.; Wu, X.; Luo, Y.; Ren, T.; Bosund, M.; Li, S.; Airaksinen, V.-M.; Lipsanen, H.; Honkanen, S.2011 ISBN: 978-1-4577-1998-1Growth and Characterization of GaP Layers on Silicon Substrates by MOVPE
Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2011 Nonlinear behavior of three terminal graphene junctions at room temperature
Kim, Wonjae; Pasanen, Pirjo; Riikonen, Juha; Rouvala, Markku; Lipsanen, Harri2011 Characteristics of InGaAs/GaAsN quantum dot solar cells.
Nagarajan, S.; Ali, M.; Mattila, P.; Jussila, H.; Aierken, A.; Sopanen, M; Lipsanen, H.2011 Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content
Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri2011 in AIP Conference Proceedings (AMER INST PHYSICS)ISSN: 0094-243XTemperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes
Rangel-Kuoppa, Victor-Tapio; Knuutila, Lauri; Sopanen, Markku; Lipsanen, Harri; Avila, Alejandro2011 in AIP Conference Proceedings (AIP)ISSN: 0094-243XSynchrotron Radiation X-Ray Topography and X-Ray Diffraction Investigation of Low Dislocation Density GaN
Sintonen, Sakari; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Tuomi, Turkka; Paulmann, Carsten2011 MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations
Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O; Shirazi, R; Lipsanen, Harri; Sopanen, Markku; Kardynal, B E2011 (GaMn)As nanowhiskers grown by molecular beam epitaxy
Bouravleuv, A.; Novikov, S.; Lebedeva, N.; Sibirev, N.; G.Cirlin, G.; Lipsanen, H.2010 Self-assembled InGaAs/GaAs quantum rings: Correlation of formation temperature and energy spectrum
Komkov, O.S.; Gordyushenkov, O.E.; Pikhtin, A.N.; Aierken, A.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2010 Circuits based on graphene transistors
Rouvala, Markku; Kim, Wonjae; Pasanen, Pirjo; Riikonen, Juha; Stadius, Kari; Ryynänen, Jussi; Lipsanen, Harri2010 Terahertz emission from GaN epilayers at lateral electric field
Shalygin, V.A.; Vorobjev, L.E.; Firsov, D.A.; Panevin, V.Yu.; Sofronov, A.N.; Melentyev, G.A.; Antonov, A.V.; Gavrilenko, V.I.; Suihkonen, S.; Törma, P.T.; Ali, M.; Lipsanen, H.2010 ISBN: 978-1-4244-6655-9Growth and characterization of InAsN/InAs multi quantum well for infrared device applications
Subramaniyam, Nagarajan; Mattila, Päivi; Aierken, Abuduwayiti; Jussila, Henri; Sopanen, Markku; Lipsanen, Harri2010 Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation
Völk, Stefan; Schülein, Florian J.R.; Knall, Florian; Wixforth, Achim; Krenner, Hubert J.; Laucht, Arne; Finley, Jonathan J.; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri; He, Jun; Truong, Tuan A.; Kim, Hyouchul; Petroff, Pierre M.2010 in Proceedings of SPIE (SPIE)ISBN: 978-0-8194-8006-4ISSN: 0277-786XMBE growth of MnP and GaMnAs nanowhiskers
Cirlin, G.E.; Sato, K.; Novikov, S.; Lebedeva, N.; Lipsanen, H.2009 Self-catalyzed growth of GaAs whiskers on GaAs and Al substartes
Cirlin, G.E.; Statkute, G.; Lipsanen, H.2009 Radiation Imaging Detectors
Nenonen, S.; Hannikainen, Diana; Orava, R.; Lipsanen, H.; Suni, I.; Elsevier, B.V2009 Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2009 in AIP Conference Proceedings (AIP)ISBN: 9780735407367ISSN: 0094-243XThe epitaxial growth on metals
Statkute, Gintare; Lipsanen, Harri2009 Amorphous silicon optical waveguides and Bragg mirrors
Khanna, A.; Mulot, M.; Arpiainen, S.; Säynätjoki, A.; Ahopelto, J.; Honkanen, S.; Lipsanen, H.2008 in Proceedings of SPIE (SPIE)ISBN: 9780819471949ISSN: 0277-786XPhotonic crystal waveguides with ring-shaped holes on silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 ISBN: 809780819471949ISSN: 0277-786xSlow-light photonic crystal waveguides with ring-shaped holes on silicon-on-insulator
Säynätjoki, Antti; Mulot, Mikaël; Vynck, Kevin; Cassagne, David; Ahopelto, Jouni; Lipsanen, Harri2008 in SPIE Proceedings (SPIE)ISBN: 9780819471949ISSN: 0277-786XNine-fold photoluminescence enhancement using photonic crystals with graphite lattice
Mulot, M.; Sihvonen, O.; Raineri, F.; Sagnes, I.; Vecchi, G.; Raj, R.; Lipsanen, H.2007 in CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS (IEEE)ISBN: 1-4244-0874-1ISSN: 1092-8669Broadband low group velocity in photonic crystal waveguides
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, S.; Ahopelto, J.; Lipsanen, Harri2007 In situ reflectance monitoring of thick GaAsN layers
Reentilä, Outi; Lankinen, Aapo; Säynätjoki, Antti; Mattila, Marco; Tuomi, Turkka; Lipsanen, Harri; "O'Reilly", Lisa; McNally, P.J.2006 Ge/GaAs heterostructures matrix detector
Kostamo, Pasi; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; Andersson, H.; Banzuzi, K.2005 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, M.; Sopanen, M.; Lipsanen, H.2005 in AIP Conference Proceedings (AIP)ISBN: 0735402574ISSN: 0094-243XPhotonic crystal slabs with ring-shaped holes in a triangular lattice
Mulot, Mikaël; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 ISBN: 0780392361High-index-contrast Optical Waveguides on Silicon
Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2005 in AIP Conference Proceedings (AIP)ISBN: 0735402574ISSN: 0094-243XGrowth parameter optimization for high nitrogen content Ga(In)NAs by MOVPE
Mattila, Marco; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri2004 Ga(In)NAs growth parameter optimization with low-pressure and atmospheric-pressure MOVPE systems
Reentilä, Outi; Mattila, Marco; Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2004 Applications of thin GaN layers in GaAs heterostuctures grown using DMHy
Sormunen, Jaakko; Riikonen, Juha; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2004 Synchrotron study of InSb, Ge, GaAs and InAs p-i-n detector materials and structures
Säynätjoki, Antti; Tuomi, Turkka; Lipsanen, Harri; Lankinen, Aapo; Kostamo, Pasi; Riikonen, Juha; Knuuttila, Lauri; Sormunen, Jaakko; Danilewski, A.2004 Integration of GaAs-based light emitter with poly-SOI
Riikonen, J.; Säynätjoki, A.; Lankinen, A.; Lipsanen, H.; Ahopelto, J.2002 Misfit dislocations in GaAsN-GaAs interface
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Chen, W.; Lowney, D.2002 Nanoscale Structures of Luminescent Polymers in Thin Films
Knaapila, Matti; Torkkeli, M.; Mäkelä, T.; Horsburgh, L.E.; Lindfors, K.; Koskenvaara, H.; Jokela, K.; Lipsanen, H.; Ahlskog, M.; Kaivola, M.; Serimaa, R.; Monkman, A.P.; ten Brinke, G.; Ikkala, Olli2001 Transient processes on strain-induced quantum dots in high magnetic field.
Lomascolo, M.; Pomarico, A.; Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.2001 in SPRINGER PROCEEDINGS IN PHYSICS (SPRINGER VERLAG)ISBN: 3-540-41778-8ISSN: 0930-8989High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Experimental determination of intra-lever relaxation time in quantum dots with different energy level spacing
Koskenvaara, H.; Sopanen, M.; Tulkki, J.; Lipsanen, H.; Braskén, M.; Lindberg, M.1999 Carrier relaxation in self-organized quantum dots: the effect of doping
Lipsanen, H.; Koskenvaara, H.; Toivonen, J.; Sopanen, M.; Ahopelto, J.1999 ISBN: 1-56677-245-1Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Grosse, S.; Feldman, J.; Karrai, K.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1999 Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Braskén, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.1999 The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Tulkki, Jukka1998 in INSTITUTE OF PHYSICS CONFERENCE SERIES (IOP PUBLISHING LTD)ISBN: 0-7503-0611-4ISSN: 0951-3248Tuning of energy levels in strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.1998 Photoluminescence study of passivated surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.1998 Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.1998 in IEEE CONFERENCE PROCEEDINGS (IEEE)ISBN: 0-7803-4220-8ISSN: 1092-8669High magnetic field effects on the optical properties of InGaAs parabolic quantum dots
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.1998 THz-Near Infrared upconversion in strain-induced quantum dots
Yusa, G.; Allen, J.; Sakaki, H.; Kono, J.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.1998 Terahertz(THz)-Near Infrated(NIR) Upconversion in strain-induced quantum dots
Yusa, G.; Allen, S.J.; Sakaki, H.; Kono, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.1998 Strain-induced quantum dots: fabrication and optical properties
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.1997 Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriquez, E.; Messmer, Höfling; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.1997 Self-organized growth of InAs islands on (100) Si by metalorganic vapor phase epitaxy
Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Strain-induced quantum dot superlattice
Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.1997 Untersuchung der Relaxationsdynamik optisch generierter Ladungsträger in verspannungsinduzierten InGaAs Quantenpunkten
Grosse, S.; Sandmann, J.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Optical characterization of self-organized InGaAs/GaAs heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.1996 Optical characterisation of self organised InGaAs/InP heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, Harri; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 ISBN: 0-7803-3283-0Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs Quantum Dots
Sandmann, J.; Grosse, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic and Atomic Zeeman Effects in Quantum Well Dots Induced by Coherent InP Islands
Tulkki, J.; Lipsanen, H.; Sopanen, M.; Brasken, M.; Lindberg, M.; Ahopelto, J.; Rinaldi, R.; Giugno, P.; Cingolani, R.1996 Optical properties of self-organized InGaAs/InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.1995 ISBN: 0-7803-2147-2Self-organizing growth of InGaAs on nanoscale InP islands
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.1994 Self-organising growth of nanoscale heterostructures: Selective growth of InGaAs on InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Niemi, H.E.-M.1994 Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy
Hjelt, Kari T.; Sopanen, Markku A.; Lipsanen, Harri K.; Tuomi, Turkka O.; Hasenohrl, Stanisla1993 in MRS Proceedings (Materials Research Society MRS)ISBN: 1558991972ISSN: 0272-9172Liquid phase epitaxial growth of GaSb layers from Ga- and Sn-rich melts
Koljonen, T.; Sopanen, M.; Hjelt, K.; Lipsanen, H.; Tuomi, T.1993 Study of direct to indirect transition in GaAs/AlAs superlattices
Lipsanen, H.K.; Airaksinen, V.M.; Tuomi, T.1993 Photoluminescence of GaSb wafers and LPE grown layers
Sopanen, M.; Hjelt, K.; Koljonen, T.; Lipsanen, H.; Koponen, M.; Tuomi, T.1993 Optical detection of electric fields in GaAs structures
Airaksinen, V.M.; Lipsanen, H.K.1992 Accurate determination of the layer thicknesses of a GaAs/AlAs superlattice
Lipsanen, H.K.; Airaksinen, V-M.; Tuomi, T.1992 Photoreflectance studies InGaAs/InP superlattices
Airaksinen, V. M.; Lipsanen, H. K.; Ravila, P.; Tuomi, T.; Claxton, P. A.1990 in SPIE Proceedings (SPIE)ISBN: 0819403377Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low field transverse electroreflectance
Lipsanen, H. K.; Airaksinen, V. M.; Tuomi, T.; Claxton, P. A.1990 in SPIE Proceedings (SPIE)ISBN: 0819403377Non-refereed scientific articles
Unrefereed journal articlesSubstrate-patterning techniques for nitride growth
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.2010 in SPIE Newsroom, Displays and Illumination (SPIE)Unrefereed conference proceedingsDirect comparison of second and third harmonic generation in mono- and few-layer MX2 (M=Mo, W; X=S, Se) by multiphoton microscope
Autere, Anton; Säynätjoki, Antti; Karvonen, Lasse; Amirsolaimani, Babak; Jussila, Henri; Yang, He; Norwood, Robert A.; Peyghambarian, Nasser; Lipsanen, Harri; Kieu, Khanh; Sun, Zhipei2016 in Conference on Lasers and Electro-Optics (Institute of Electrical and Electronics Engineers Inc.)ISBN: 9781943580118ISSN: 2160-9020Nonlinear microscopy of nano-objects using excitation beam profiles with engineered phase jumps
Turquet, L.; Kakko, J. P.; Karvonen, Lasse; Jiang, H.; Isotalo, T. J.; Huhtio, T.; Niemi, T.; Kauppinen, E.; Lipsanen, H.; Kauranen, M.; Bautista, G.2016 in Conference on Lasers and Electro-Optics (Institute of Electrical and Electronics Engineers Inc.)ISBN: 9781943580118ISSN: 2160-9020Second harmonic generation imaging of vertically aligned GaAs nanowires
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Huttunen, Mikko; Karvonen, Lasse; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2014 Broadband polarization dynamics control with aligned carbon nanotubes
Fu, Bo; Yang, He; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Qingwen; Yang, Changxi; Tittonen, Ilkka; Lipsanen, Harri; Sun, Zhipei2014 Investigation of optical nonlinearities in graphene and layered semiconductors by multiphoton microscopy
Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Riikonen, Juha; Peyghambarian, Nasser; K.Kieu, Khanh; Lipsanen, Harri2014 Investigation of optical nonlinearities in few-layer gallium selenide by multiphoton microscopy
Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Rodriquez, Raul D.; Hartmann, Susanne; Zahn, Dietrich R.T.; Honkanen, Seppo; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri; Riikonen, Juha2014 Toward efficient graphene fabrication and ultrafast characterization
Riikonen, Juha; Kim, Kim; Li, Changfeng; Säynätjoki, Antti; Karvonen, Lasse; Lipsanen, Harri2014 Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer
Aierken, A.; Nagarajan, S.; Huhtio, T.; Sopanen, M.; Lipsanen, H.2011 Publications intended for professional communities
Article in professional journalPlasma aateloi ALD:n
Bosund, Markus; Hakkarainen, Teppo; Lipsanen, Harri; Airaksinen, Veli-Matti; Putkonen, Matti2009 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121GROI-kiekkoja anturisovelluksiin
Arpiainen, Sanna; Kainlauri, Markku; Ahopelto, Jouni; Kim, Wonjae; Lipsanen, Harri2008 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
Tulkki, J.; Lipsanen, H.; Sopanen, M.2004 in Artec House (Institute of Electrical and Electronics Engineers Inc.)Article in professional conference proceedingsProperties of GaAs nanowires grown on low-cost glass substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires
Haggren, Tuomas; Dhaka, Veer; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Controlling gold nanoparticle densities on electrode surfaces by combination of self assembly and electron beam lithography
Toikkanen, O.; Doan, N.; Erdmanis, M.; Lipsanen, H.; Parviz, B.; Kontturi, K.2010 Published development or research reportNonlinear imaging of vertically aligned semiconductor nanowires using focused vector beams
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Karvonen, Lasse; Jiang, Hua; Huttunen, Mikko; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Second and third harmonic generation in few-layer gallium telluride by multiphoton microscopy
Susoma, Jannatul; Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Kahn; Lipsanen, Harri; Riikonen, Juha2015 Multiphoton Characterization of Two-Dimensional Layered Materials
Säynätjoki, Antti; Karvonen, Lasse; Riikonen, Juha; Kim, Wonjae; Mehravar, Soroush; Norwood, Robert; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri2015 Tunable nonlinear effects through focused spatially phase-shaped beams
Turquet, Leo; Bautista, Godofredo; Karvonen, Lasse; Dhaka, Veer; Chen, Ya; Jiang, Hua; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Water Mist-induced Parallel Self-alignment of Microchips on Hydrophilic/Super-hydrophobic Nanostructured Surface
Chang, Bo; Shah, Ali; Lipsanen, Harri; Zhou, Quan2014 Properties of AlN Film Grown by Plasma Enhanced Atomic Layer Deposition
Bosund, M.; Putkonen, Matti; Sajavaara, T.; Laitinen, M.; Huhtio, T.; Airaksinen, V-M.; Lipsanen, H.2011 Photonic crystals with ring-shaped holes on silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 Self-catalyzed growth and properties of InP nanowires
Mattila, M.; Hakkarainen, T.; Lipsanen, H.; Jiang, H.; Kauppinen, E.2007 Reduction of threading dislocation density in AlGaN epilayers by a multistep technique
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Lipsanen, Harri2006 In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 In-situ composition determination of MOVPE grown InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 Hydrogen treatment of InGaN/GaN MQW structures
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Törmä, Pekka; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Magnesium doping of group-III nitrides for LED- and laser structures
Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Inductively coupled plasma etching of III-nitride based laser structure using CI2/BCI3/Ar gasses
Törmä, Pekka; Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, V.E.; Bougrov, V.E.2006 Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy
Knuuttila, Lauri; Lankinen, Aapo; Lipsanen, Harri2005 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 Low air-fill-factor photonic crystals with ring-shaped holes in a triangular lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Photonic Crystal Slabs with Ring-Shaped holes in a Triangular Lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Säynätjoki, Antti; Kostamo, Pasi; Sormunen, Jaakko; Riikonen, Juha; Lankinen, Aapo; Lipsanen, Harri; Andersson, H.; Banzuzi, K.; Nenonen, S.; Sipilä, H.; Vaijärvi, S.2005 Characterization of photonic crystal waveguides fabricated in silicon-on-insulator
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2005 Characterization of photonic crystal waveguides using Fabry-Perot resonances
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
Riikonen, J.; Tuomi, T.; Lankinen, A.; Sormunen, J.; Säynätjoki, A.; Knuuttila, L.; Lipsanen, H.; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy
Riikonen, Juha; Tuomi, Turkka; Lankinen, Aapo; Sormunen, Jaakko; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 High-index-contrast Optical Weveguides on Silicon
Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2004 Optical waveguides on polysilicon-on-insulator
Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri2003 Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 In (Ga)As quantum dots on Ge substrate
Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.2002 Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.2002 Optical waveguides on polysilicon-on-insulator
Säynätjoki, A.; Riikonen, J.; Reentilä, O.; Lipsanen, H.; Ahopelto, J.2002 Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Effect of growth conditions on the defect transitions in Ga(In)NAs
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Growth and optical properties of GaInNAs quantum wells
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2001 Epitaxial growth of GaAs on silicon-on-ilsulator
Riikonen, J.; Knuuttila, L.; Tuomi, T.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.2001 Growth and defects of GaAsN layers on GaAs
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.2001 Optoelectronics Laboratory Activity Report 1996-1999
Collan, H.; Lipsanen, H.; Rantamäki, R.; Tuomi, T.2000 High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.1997 Ultrafast relaxation dynamics in strain-induced quantum dots
Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Karilahti, M.; Tuomi, T.; Taskinen, M.; Tulkki, J.; Lipsanen, H.; McNally, P.1996 In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic Zeeman effect in parabolic quantum dots
Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.1996 Optical properties of self-organized InGaAs/InP dots.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication, characterization and modelling of stain-induced quantum dots.
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.1995 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
Lipsanen, H.; Sopanen, M.1995 InGaAs quantum dots induced by self-organized InP stressors.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.
Lipsanen, H.; Salo, T.; Tuomi, T.1995 Recombination processes in strain-induced InGaAs quantum dots.
Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.1995 Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.
Taskinen, M.; Heinämäki, A.; Lipsanen, H.; Tulkki, J.; Tuomi, T.1995 Synchrotron X-ray topographic studies of strain in silicon wafers with integrated circuits.
Tuomi, T.; Karilahti, M.; Äyräs, P.; Lipsanen, H.; McNally, P.1995 Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1994 X-ray diffraction study of GaSb on GaAs grown by MOVPE
Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.1994 Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells
Lipsanen, H.1994 Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates
Lipsanen, H.K.; Airaksinen, V.M.1994 Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.1994 MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.1994 MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.1994 Metallo organic vapour phase epitaxy of III-V semiconductors
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.1994 The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1993 Accurate determination of the layer thicnesses of a GaAs/AlAs superlattice
Lipsanen, H.K.; Tuominen, M.; Airaksinen, V.M.1993 Photoreflectance of Bragg confined transitions in a superlattice with multiquantum barries
Lipsanen, H.K.; Airaksinen, V.M.; Taskinen, K.1993 Metallo-organic vapor phase system
Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.1993 Photoreflectance study of photovoltage effects in GaAs diode structures
Airaksinen, V.M.; Lipsanen, H.K.1992 Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.1992 Liquid phase epitaxial (LPE) technique
Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.1992 High Speed InGaAsP/InP multiple quantum well laser
Lipsanen, H.K.; Coblenz, D.L.; Logan, R.A.; Yadvish, R.D.; Morton, P.A.; Temkin, H.1992 Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers
Rönn, John; Karvonen, Lasse; Pyymaki-Perros, Alexander; Peyghambarian, Nasser N.; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016
Topography imaging of defects in GaAs on Ge
MBE growth of nanowires using colloidal Ag nanoparticles
Low temperature and high quality atomic layer deposition HfO2 coatings
Integration of atomic layer deposited nanolaminates on silicon waveguides (Conference Presentation)
Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition
Efficient terahertz generation by ordered arrays of GaAs nanowires
Fabrication of aligned carbon nanotube device and its application for polarization controlling
Polarization dynamics control with aligned carbon nanotubes
Effects of Zn doping on GaAs nanowires
Reflectance measurements of triangular lattice GaAs nanowire arrays
Nanolaminate structures fabricated by ALD for reducing propagation losses and enhancing the third-order optical nonlinearities
Growth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars
Radiation detectors fabricated on high-purity GaAs epitaxial materials
Fabrication of Large-Area Plasmonic Nanostructures for Surface Enhanced Fluorescence
Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate
Third-harmonic and multiphoton excitation fluorescence microscopy of single and few layer graphene
Carriers transport in GaAs nanowires
High-Performance Large-Area Ultra-Thin X-ray Window
Graphene for Gigahertz Applications
Structural study of crystal defects in thin GaP layers on (100) silicon substrates by X-ray diffraction
Growth of CVD graphene on copper by rapid thermal processing
Electrical Properties of CVD-Graphene FETs
Rapid Thermal CVD of Graphene on Copper
Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization
Growth and Characterization of GaP Layers on Silicon Substrates by MOVPE
Nonlinear behavior of three terminal graphene junctions at room temperature
Characteristics of InGaAs/GaAsN quantum dot solar cells.
Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content
Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes
Synchrotron Radiation X-Ray Topography and X-Ray Diffraction Investigation of Low Dislocation Density GaN
MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations
(GaMn)As nanowhiskers grown by molecular beam epitaxy
Self-assembled InGaAs/GaAs quantum rings: Correlation of formation temperature and energy spectrum
Circuits based on graphene transistors
Terahertz emission from GaN epilayers at lateral electric field
Growth and characterization of InAsN/InAs multi quantum well for infrared device applications
Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation
MBE growth of MnP and GaMnAs nanowhiskers
Self-catalyzed growth of GaAs whiskers on GaAs and Al substartes
Radiation Imaging Detectors
Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
The epitaxial growth on metals
Amorphous silicon optical waveguides and Bragg mirrors
Photonic crystal waveguides with ring-shaped holes on silicon-on-insulator
Slow-light photonic crystal waveguides with ring-shaped holes on silicon-on-insulator
Nine-fold photoluminescence enhancement using photonic crystals with graphite lattice
Broadband low group velocity in photonic crystal waveguides
In situ reflectance monitoring of thick GaAsN layers
Ge/GaAs heterostructures matrix detector
Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Photonic crystal slabs with ring-shaped holes in a triangular lattice
High-index-contrast Optical Waveguides on Silicon
Growth parameter optimization for high nitrogen content Ga(In)NAs by MOVPE
Ga(In)NAs growth parameter optimization with low-pressure and atmospheric-pressure MOVPE systems
Applications of thin GaN layers in GaAs heterostuctures grown using DMHy
Synchrotron study of InSb, Ge, GaAs and InAs p-i-n detector materials and structures
Integration of GaAs-based light emitter with poly-SOI
Misfit dislocations in GaAsN-GaAs interface
Nanoscale Structures of Luminescent Polymers in Thin Films
Transient processes on strain-induced quantum dots in high magnetic field.
High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy
Experimental determination of intra-lever relaxation time in quantum dots with different energy level spacing
Carrier relaxation in self-organized quantum dots: the effect of doping
Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)
The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots
Tuning of energy levels in strain-induced quantum dots
Photoluminescence study of passivated surface quantum wells
Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells
High magnetic field effects on the optical properties of InGaAs parabolic quantum dots
THz-Near Infrared upconversion in strain-induced quantum dots
Terahertz(THz)-Near Infrated(NIR) Upconversion in strain-induced quantum dots
Strain-induced quantum dots: fabrication and optical properties
Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Self-organized growth of InAs islands on (100) Si by metalorganic vapor phase epitaxy
Strain-induced quantum dot superlattice
Untersuchung der Relaxationsdynamik optisch generierter Ladungsträger in verspannungsinduzierten InGaAs Quantenpunkten
Optical characterization of self-organized InGaAs/GaAs heterodots
Optical characterisation of self organised InGaAs/InP heterodots
Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs Quantum Dots
Mesoscopic and Atomic Zeeman Effects in Quantum Well Dots Induced by Coherent InP Islands
Optical properties of self-organized InGaAs/InP dots
Self-organizing growth of InGaAs on nanoscale InP islands
Self-organising growth of nanoscale heterostructures: Selective growth of InGaAs on InP dots
Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy
Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy
Liquid phase epitaxial growth of GaSb layers from Ga- and Sn-rich melts
Study of direct to indirect transition in GaAs/AlAs superlattices
Photoluminescence of GaSb wafers and LPE grown layers
Optical detection of electric fields in GaAs structures
Accurate determination of the layer thicknesses of a GaAs/AlAs superlattice
Photoreflectance studies InGaAs/InP superlattices
Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low field transverse electroreflectance
Non-refereed scientific articles
Unrefereed journal articlesSubstrate-patterning techniques for nitride growth
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.2010 in SPIE Newsroom, Displays and Illumination (SPIE)Unrefereed conference proceedingsDirect comparison of second and third harmonic generation in mono- and few-layer MX2 (M=Mo, W; X=S, Se) by multiphoton microscope
Autere, Anton; Säynätjoki, Antti; Karvonen, Lasse; Amirsolaimani, Babak; Jussila, Henri; Yang, He; Norwood, Robert A.; Peyghambarian, Nasser; Lipsanen, Harri; Kieu, Khanh; Sun, Zhipei2016 in Conference on Lasers and Electro-Optics (Institute of Electrical and Electronics Engineers Inc.)ISBN: 9781943580118ISSN: 2160-9020Nonlinear microscopy of nano-objects using excitation beam profiles with engineered phase jumps
Turquet, L.; Kakko, J. P.; Karvonen, Lasse; Jiang, H.; Isotalo, T. J.; Huhtio, T.; Niemi, T.; Kauppinen, E.; Lipsanen, H.; Kauranen, M.; Bautista, G.2016 in Conference on Lasers and Electro-Optics (Institute of Electrical and Electronics Engineers Inc.)ISBN: 9781943580118ISSN: 2160-9020Second harmonic generation imaging of vertically aligned GaAs nanowires
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Huttunen, Mikko; Karvonen, Lasse; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2014 Broadband polarization dynamics control with aligned carbon nanotubes
Fu, Bo; Yang, He; Chen, Ya; Mattila, Marco; Yong, Zhenzhong; Li, Qingwen; Yang, Changxi; Tittonen, Ilkka; Lipsanen, Harri; Sun, Zhipei2014 Investigation of optical nonlinearities in graphene and layered semiconductors by multiphoton microscopy
Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Riikonen, Juha; Peyghambarian, Nasser; K.Kieu, Khanh; Lipsanen, Harri2014 Investigation of optical nonlinearities in few-layer gallium selenide by multiphoton microscopy
Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Rodriquez, Raul D.; Hartmann, Susanne; Zahn, Dietrich R.T.; Honkanen, Seppo; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri; Riikonen, Juha2014 Toward efficient graphene fabrication and ultrafast characterization
Riikonen, Juha; Kim, Kim; Li, Changfeng; Säynätjoki, Antti; Karvonen, Lasse; Lipsanen, Harri2014 Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer
Aierken, A.; Nagarajan, S.; Huhtio, T.; Sopanen, M.; Lipsanen, H.2011 Publications intended for professional communities
Article in professional journalPlasma aateloi ALD:n
Bosund, Markus; Hakkarainen, Teppo; Lipsanen, Harri; Airaksinen, Veli-Matti; Putkonen, Matti2009 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121GROI-kiekkoja anturisovelluksiin
Arpiainen, Sanna; Kainlauri, Markku; Ahopelto, Jouni; Kim, Wonjae; Lipsanen, Harri2008 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
Tulkki, J.; Lipsanen, H.; Sopanen, M.2004 in Artec House (Institute of Electrical and Electronics Engineers Inc.)Article in professional conference proceedingsProperties of GaAs nanowires grown on low-cost glass substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires
Haggren, Tuomas; Dhaka, Veer; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Controlling gold nanoparticle densities on electrode surfaces by combination of self assembly and electron beam lithography
Toikkanen, O.; Doan, N.; Erdmanis, M.; Lipsanen, H.; Parviz, B.; Kontturi, K.2010 Published development or research reportNonlinear imaging of vertically aligned semiconductor nanowires using focused vector beams
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Karvonen, Lasse; Jiang, Hua; Huttunen, Mikko; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Second and third harmonic generation in few-layer gallium telluride by multiphoton microscopy
Susoma, Jannatul; Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Kahn; Lipsanen, Harri; Riikonen, Juha2015 Multiphoton Characterization of Two-Dimensional Layered Materials
Säynätjoki, Antti; Karvonen, Lasse; Riikonen, Juha; Kim, Wonjae; Mehravar, Soroush; Norwood, Robert; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri2015 Tunable nonlinear effects through focused spatially phase-shaped beams
Turquet, Leo; Bautista, Godofredo; Karvonen, Lasse; Dhaka, Veer; Chen, Ya; Jiang, Hua; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Water Mist-induced Parallel Self-alignment of Microchips on Hydrophilic/Super-hydrophobic Nanostructured Surface
Chang, Bo; Shah, Ali; Lipsanen, Harri; Zhou, Quan2014 Properties of AlN Film Grown by Plasma Enhanced Atomic Layer Deposition
Bosund, M.; Putkonen, Matti; Sajavaara, T.; Laitinen, M.; Huhtio, T.; Airaksinen, V-M.; Lipsanen, H.2011 Photonic crystals with ring-shaped holes on silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 Self-catalyzed growth and properties of InP nanowires
Mattila, M.; Hakkarainen, T.; Lipsanen, H.; Jiang, H.; Kauppinen, E.2007 Reduction of threading dislocation density in AlGaN epilayers by a multistep technique
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Lipsanen, Harri2006 In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 In-situ composition determination of MOVPE grown InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 Hydrogen treatment of InGaN/GaN MQW structures
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Törmä, Pekka; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Magnesium doping of group-III nitrides for LED- and laser structures
Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Inductively coupled plasma etching of III-nitride based laser structure using CI2/BCI3/Ar gasses
Törmä, Pekka; Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, V.E.; Bougrov, V.E.2006 Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy
Knuuttila, Lauri; Lankinen, Aapo; Lipsanen, Harri2005 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 Low air-fill-factor photonic crystals with ring-shaped holes in a triangular lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Photonic Crystal Slabs with Ring-Shaped holes in a Triangular Lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Säynätjoki, Antti; Kostamo, Pasi; Sormunen, Jaakko; Riikonen, Juha; Lankinen, Aapo; Lipsanen, Harri; Andersson, H.; Banzuzi, K.; Nenonen, S.; Sipilä, H.; Vaijärvi, S.2005 Characterization of photonic crystal waveguides fabricated in silicon-on-insulator
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2005 Characterization of photonic crystal waveguides using Fabry-Perot resonances
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
Riikonen, J.; Tuomi, T.; Lankinen, A.; Sormunen, J.; Säynätjoki, A.; Knuuttila, L.; Lipsanen, H.; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy
Riikonen, Juha; Tuomi, Turkka; Lankinen, Aapo; Sormunen, Jaakko; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 High-index-contrast Optical Weveguides on Silicon
Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2004 Optical waveguides on polysilicon-on-insulator
Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri2003 Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 In (Ga)As quantum dots on Ge substrate
Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.2002 Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.2002 Optical waveguides on polysilicon-on-insulator
Säynätjoki, A.; Riikonen, J.; Reentilä, O.; Lipsanen, H.; Ahopelto, J.2002 Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Effect of growth conditions on the defect transitions in Ga(In)NAs
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Growth and optical properties of GaInNAs quantum wells
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2001 Epitaxial growth of GaAs on silicon-on-ilsulator
Riikonen, J.; Knuuttila, L.; Tuomi, T.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.2001 Growth and defects of GaAsN layers on GaAs
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.2001 Optoelectronics Laboratory Activity Report 1996-1999
Collan, H.; Lipsanen, H.; Rantamäki, R.; Tuomi, T.2000 High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.1997 Ultrafast relaxation dynamics in strain-induced quantum dots
Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Karilahti, M.; Tuomi, T.; Taskinen, M.; Tulkki, J.; Lipsanen, H.; McNally, P.1996 In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic Zeeman effect in parabolic quantum dots
Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.1996 Optical properties of self-organized InGaAs/InP dots.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication, characterization and modelling of stain-induced quantum dots.
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.1995 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
Lipsanen, H.; Sopanen, M.1995 InGaAs quantum dots induced by self-organized InP stressors.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.
Lipsanen, H.; Salo, T.; Tuomi, T.1995 Recombination processes in strain-induced InGaAs quantum dots.
Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.1995 Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.
Taskinen, M.; Heinämäki, A.; Lipsanen, H.; Tulkki, J.; Tuomi, T.1995 Synchrotron X-ray topographic studies of strain in silicon wafers with integrated circuits.
Tuomi, T.; Karilahti, M.; Äyräs, P.; Lipsanen, H.; McNally, P.1995 Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1994 X-ray diffraction study of GaSb on GaAs grown by MOVPE
Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.1994 Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells
Lipsanen, H.1994 Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates
Lipsanen, H.K.; Airaksinen, V.M.1994 Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.1994 MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.1994 MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.1994 Metallo organic vapour phase epitaxy of III-V semiconductors
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.1994 The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1993 Accurate determination of the layer thicnesses of a GaAs/AlAs superlattice
Lipsanen, H.K.; Tuominen, M.; Airaksinen, V.M.1993 Photoreflectance of Bragg confined transitions in a superlattice with multiquantum barries
Lipsanen, H.K.; Airaksinen, V.M.; Taskinen, K.1993 Metallo-organic vapor phase system
Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.1993 Photoreflectance study of photovoltage effects in GaAs diode structures
Airaksinen, V.M.; Lipsanen, H.K.1992 Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.1992 Liquid phase epitaxial (LPE) technique
Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.1992 High Speed InGaAsP/InP multiple quantum well laser
Lipsanen, H.K.; Coblenz, D.L.; Logan, R.A.; Yadvish, R.D.; Morton, P.A.; Temkin, H.1992 Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers
Rönn, John; Karvonen, Lasse; Pyymaki-Perros, Alexander; Peyghambarian, Nasser N.; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016
Substrate-patterning techniques for nitride growth
Direct comparison of second and third harmonic generation in mono- and few-layer MX2 (M=Mo, W; X=S, Se) by multiphoton microscope
Nonlinear microscopy of nano-objects using excitation beam profiles with engineered phase jumps
Second harmonic generation imaging of vertically aligned GaAs nanowires
Broadband polarization dynamics control with aligned carbon nanotubes
Investigation of optical nonlinearities in graphene and layered semiconductors by multiphoton microscopy
Investigation of optical nonlinearities in few-layer gallium selenide by multiphoton microscopy
Toward efficient graphene fabrication and ultrafast characterization
Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer
Publications intended for professional communities
Article in professional journalPlasma aateloi ALD:n
Bosund, Markus; Hakkarainen, Teppo; Lipsanen, Harri; Airaksinen, Veli-Matti; Putkonen, Matti2009 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121GROI-kiekkoja anturisovelluksiin
Arpiainen, Sanna; Kainlauri, Markku; Ahopelto, Jouni; Kim, Wonjae; Lipsanen, Harri2008 in Prosessori (Institute of Electrical and Electronics Engineers Inc.)ISSN: 0357-4121Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
Tulkki, J.; Lipsanen, H.; Sopanen, M.2004 in Artec House (Institute of Electrical and Electronics Engineers Inc.)Article in professional conference proceedingsProperties of GaAs nanowires grown on low-cost glass substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires
Haggren, Tuomas; Dhaka, Veer; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Controlling gold nanoparticle densities on electrode surfaces by combination of self assembly and electron beam lithography
Toikkanen, O.; Doan, N.; Erdmanis, M.; Lipsanen, H.; Parviz, B.; Kontturi, K.2010 Published development or research reportNonlinear imaging of vertically aligned semiconductor nanowires using focused vector beams
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Karvonen, Lasse; Jiang, Hua; Huttunen, Mikko; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Second and third harmonic generation in few-layer gallium telluride by multiphoton microscopy
Susoma, Jannatul; Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Kahn; Lipsanen, Harri; Riikonen, Juha2015 Multiphoton Characterization of Two-Dimensional Layered Materials
Säynätjoki, Antti; Karvonen, Lasse; Riikonen, Juha; Kim, Wonjae; Mehravar, Soroush; Norwood, Robert; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri2015 Tunable nonlinear effects through focused spatially phase-shaped beams
Turquet, Leo; Bautista, Godofredo; Karvonen, Lasse; Dhaka, Veer; Chen, Ya; Jiang, Hua; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Water Mist-induced Parallel Self-alignment of Microchips on Hydrophilic/Super-hydrophobic Nanostructured Surface
Chang, Bo; Shah, Ali; Lipsanen, Harri; Zhou, Quan2014 Properties of AlN Film Grown by Plasma Enhanced Atomic Layer Deposition
Bosund, M.; Putkonen, Matti; Sajavaara, T.; Laitinen, M.; Huhtio, T.; Airaksinen, V-M.; Lipsanen, H.2011 Photonic crystals with ring-shaped holes on silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 Self-catalyzed growth and properties of InP nanowires
Mattila, M.; Hakkarainen, T.; Lipsanen, H.; Jiang, H.; Kauppinen, E.2007 Reduction of threading dislocation density in AlGaN epilayers by a multistep technique
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Lipsanen, Harri2006 In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 In-situ composition determination of MOVPE grown InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 Hydrogen treatment of InGaN/GaN MQW structures
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Törmä, Pekka; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Magnesium doping of group-III nitrides for LED- and laser structures
Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Inductively coupled plasma etching of III-nitride based laser structure using CI2/BCI3/Ar gasses
Törmä, Pekka; Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, V.E.; Bougrov, V.E.2006 Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy
Knuuttila, Lauri; Lankinen, Aapo; Lipsanen, Harri2005 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 Low air-fill-factor photonic crystals with ring-shaped holes in a triangular lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Photonic Crystal Slabs with Ring-Shaped holes in a Triangular Lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Säynätjoki, Antti; Kostamo, Pasi; Sormunen, Jaakko; Riikonen, Juha; Lankinen, Aapo; Lipsanen, Harri; Andersson, H.; Banzuzi, K.; Nenonen, S.; Sipilä, H.; Vaijärvi, S.2005 Characterization of photonic crystal waveguides fabricated in silicon-on-insulator
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2005 Characterization of photonic crystal waveguides using Fabry-Perot resonances
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
Riikonen, J.; Tuomi, T.; Lankinen, A.; Sormunen, J.; Säynätjoki, A.; Knuuttila, L.; Lipsanen, H.; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy
Riikonen, Juha; Tuomi, Turkka; Lankinen, Aapo; Sormunen, Jaakko; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 High-index-contrast Optical Weveguides on Silicon
Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2004 Optical waveguides on polysilicon-on-insulator
Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri2003 Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 In (Ga)As quantum dots on Ge substrate
Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.2002 Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.2002 Optical waveguides on polysilicon-on-insulator
Säynätjoki, A.; Riikonen, J.; Reentilä, O.; Lipsanen, H.; Ahopelto, J.2002 Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Effect of growth conditions on the defect transitions in Ga(In)NAs
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Growth and optical properties of GaInNAs quantum wells
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2001 Epitaxial growth of GaAs on silicon-on-ilsulator
Riikonen, J.; Knuuttila, L.; Tuomi, T.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.2001 Growth and defects of GaAsN layers on GaAs
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.2001 Optoelectronics Laboratory Activity Report 1996-1999
Collan, H.; Lipsanen, H.; Rantamäki, R.; Tuomi, T.2000 High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.1997 Ultrafast relaxation dynamics in strain-induced quantum dots
Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Karilahti, M.; Tuomi, T.; Taskinen, M.; Tulkki, J.; Lipsanen, H.; McNally, P.1996 In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic Zeeman effect in parabolic quantum dots
Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.1996 Optical properties of self-organized InGaAs/InP dots.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication, characterization and modelling of stain-induced quantum dots.
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.1995 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
Lipsanen, H.; Sopanen, M.1995 InGaAs quantum dots induced by self-organized InP stressors.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.
Lipsanen, H.; Salo, T.; Tuomi, T.1995 Recombination processes in strain-induced InGaAs quantum dots.
Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.1995 Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.
Taskinen, M.; Heinämäki, A.; Lipsanen, H.; Tulkki, J.; Tuomi, T.1995 Synchrotron X-ray topographic studies of strain in silicon wafers with integrated circuits.
Tuomi, T.; Karilahti, M.; Äyräs, P.; Lipsanen, H.; McNally, P.1995 Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1994 X-ray diffraction study of GaSb on GaAs grown by MOVPE
Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.1994 Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells
Lipsanen, H.1994 Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates
Lipsanen, H.K.; Airaksinen, V.M.1994 Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.1994 MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.1994 MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.1994 Metallo organic vapour phase epitaxy of III-V semiconductors
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.1994 The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1993 Accurate determination of the layer thicnesses of a GaAs/AlAs superlattice
Lipsanen, H.K.; Tuominen, M.; Airaksinen, V.M.1993 Photoreflectance of Bragg confined transitions in a superlattice with multiquantum barries
Lipsanen, H.K.; Airaksinen, V.M.; Taskinen, K.1993 Metallo-organic vapor phase system
Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.1993 Photoreflectance study of photovoltage effects in GaAs diode structures
Airaksinen, V.M.; Lipsanen, H.K.1992 Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.1992 Liquid phase epitaxial (LPE) technique
Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.1992 High Speed InGaAsP/InP multiple quantum well laser
Lipsanen, H.K.; Coblenz, D.L.; Logan, R.A.; Yadvish, R.D.; Morton, P.A.; Temkin, H.1992 Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers
Rönn, John; Karvonen, Lasse; Pyymaki-Perros, Alexander; Peyghambarian, Nasser N.; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016
Plasma aateloi ALD:n
GROI-kiekkoja anturisovelluksiin
Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
Properties of GaAs nanowires grown on low-cost glass substrates
Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires
Controlling gold nanoparticle densities on electrode surfaces by combination of self assembly and electron beam lithography
Published development or research reportNonlinear imaging of vertically aligned semiconductor nanowires using focused vector beams
Bautista, Godofredo; Mäkitalo, Jouni; Chen, Ya; Dhaka, Veer; Grasso, Marco; Karvonen, Lasse; Jiang, Hua; Huttunen, Mikko; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Second and third harmonic generation in few-layer gallium telluride by multiphoton microscopy
Susoma, Jannatul; Karvonen, Lasse; Säynätjoki, Antti; Mehravar, Soroush; Norwood, Robert A.; Peyghambarian, Nasser; Kieu, Kahn; Lipsanen, Harri; Riikonen, Juha2015 Multiphoton Characterization of Two-Dimensional Layered Materials
Säynätjoki, Antti; Karvonen, Lasse; Riikonen, Juha; Kim, Wonjae; Mehravar, Soroush; Norwood, Robert; Peyghambarian, Nasser; Kieu, Khanh; Lipsanen, Harri2015 Tunable nonlinear effects through focused spatially phase-shaped beams
Turquet, Leo; Bautista, Godofredo; Karvonen, Lasse; Dhaka, Veer; Chen, Ya; Jiang, Hua; Huhtio, Teppo; Lipsanen, Harri; Kauranen, Martti2015 Water Mist-induced Parallel Self-alignment of Microchips on Hydrophilic/Super-hydrophobic Nanostructured Surface
Chang, Bo; Shah, Ali; Lipsanen, Harri; Zhou, Quan2014 Properties of AlN Film Grown by Plasma Enhanced Atomic Layer Deposition
Bosund, M.; Putkonen, Matti; Sajavaara, T.; Laitinen, M.; Huhtio, T.; Airaksinen, V-M.; Lipsanen, H.2011 Photonic crystals with ring-shaped holes on silicon-on-insulator
Säynätjoki, A.; Mulot, M.; Vynck, K.; Cassagne, D.; Ahopelto, J.; Lipsanen, H.2008 Self-catalyzed growth and properties of InP nanowires
Mattila, M.; Hakkarainen, T.; Lipsanen, H.; Jiang, H.; Kauppinen, E.2007 Reduction of threading dislocation density in AlGaN epilayers by a multistep technique
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Lipsanen, Harri2006 In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 In-situ composition determination of MOVPE grown InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 Hydrogen treatment of InGaN/GaN MQW structures
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Törmä, Pekka; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance
Suihkonen, Sami; Svensk, Olli; Lang, Teemu; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Magnesium doping of group-III nitrides for LED- and laser structures
Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2006 Inductively coupled plasma etching of III-nitride based laser structure using CI2/BCI3/Ar gasses
Törmä, Pekka; Svensk, Olli; Suihkonen, Sami; Lipsanen, Harri; Odnoblyudov, V.E.; Bougrov, V.E.2006 Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy
Knuuttila, Lauri; Lankinen, Aapo; Lipsanen, Harri2005 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 Low air-fill-factor photonic crystals with ring-shaped holes in a triangular lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Photonic Crystal Slabs with Ring-Shaped holes in a Triangular Lattice
Mulot, Mikael; Säynätjoki, Antti; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Säynätjoki, Antti; Kostamo, Pasi; Sormunen, Jaakko; Riikonen, Juha; Lankinen, Aapo; Lipsanen, Harri; Andersson, H.; Banzuzi, K.; Nenonen, S.; Sipilä, H.; Vaijärvi, S.2005 Characterization of photonic crystal waveguides fabricated in silicon-on-insulator
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2005 Characterization of photonic crystal waveguides using Fabry-Perot resonances
Säynätjoki, Antti; Mulot, Mikael; Arpiainen, Sanna; Lipsanen, Harri; Ahopelto, Jouni2005 Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
Riikonen, J.; Tuomi, T.; Lankinen, A.; Sormunen, J.; Säynätjoki, A.; Knuuttila, L.; Lipsanen, H.; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy
Riikonen, Juha; Tuomi, Turkka; Lankinen, Aapo; Sormunen, Jaakko; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.2004 High-index-contrast Optical Weveguides on Silicon
Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri2004 Optical waveguides on polysilicon-on-insulator
Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri2003 Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 In (Ga)As quantum dots on Ge substrate
Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.2002 Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.2002 Optical waveguides on polysilicon-on-insulator
Säynätjoki, A.; Riikonen, J.; Reentilä, O.; Lipsanen, H.; Ahopelto, J.2002 Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Effect of growth conditions on the defect transitions in Ga(In)NAs
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Growth and optical properties of GaInNAs quantum wells
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2001 Epitaxial growth of GaAs on silicon-on-ilsulator
Riikonen, J.; Knuuttila, L.; Tuomi, T.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.2001 Growth and defects of GaAsN layers on GaAs
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.2001 Optoelectronics Laboratory Activity Report 1996-1999
Collan, H.; Lipsanen, H.; Rantamäki, R.; Tuomi, T.2000 High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.1997 Ultrafast relaxation dynamics in strain-induced quantum dots
Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
Karilahti, M.; Tuomi, T.; Taskinen, M.; Tulkki, J.; Lipsanen, H.; McNally, P.1996 In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic Zeeman effect in parabolic quantum dots
Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.1996 Optical properties of self-organized InGaAs/InP dots.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication, characterization and modelling of stain-induced quantum dots.
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.1995 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
Lipsanen, H.; Sopanen, M.1995 InGaAs quantum dots induced by self-organized InP stressors.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.
Lipsanen, H.; Salo, T.; Tuomi, T.1995 Recombination processes in strain-induced InGaAs quantum dots.
Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.1995 Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.
Taskinen, M.; Heinämäki, A.; Lipsanen, H.; Tulkki, J.; Tuomi, T.1995 Synchrotron X-ray topographic studies of strain in silicon wafers with integrated circuits.
Tuomi, T.; Karilahti, M.; Äyräs, P.; Lipsanen, H.; McNally, P.1995 Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1994 X-ray diffraction study of GaSb on GaAs grown by MOVPE
Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.1994 Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells
Lipsanen, H.1994 Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates
Lipsanen, H.K.; Airaksinen, V.M.1994 Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.1994 MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.1994 MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.1994 Metallo organic vapour phase epitaxy of III-V semiconductors
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.1994 The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1993 Accurate determination of the layer thicnesses of a GaAs/AlAs superlattice
Lipsanen, H.K.; Tuominen, M.; Airaksinen, V.M.1993 Photoreflectance of Bragg confined transitions in a superlattice with multiquantum barries
Lipsanen, H.K.; Airaksinen, V.M.; Taskinen, K.1993 Metallo-organic vapor phase system
Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.1993 Photoreflectance study of photovoltage effects in GaAs diode structures
Airaksinen, V.M.; Lipsanen, H.K.1992 Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.1992 Liquid phase epitaxial (LPE) technique
Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.1992 High Speed InGaAsP/InP multiple quantum well laser
Lipsanen, H.K.; Coblenz, D.L.; Logan, R.A.; Yadvish, R.D.; Morton, P.A.; Temkin, H.1992 Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers
Rönn, John; Karvonen, Lasse; Pyymaki-Perros, Alexander; Peyghambarian, Nasser N.; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei2016
Nonlinear imaging of vertically aligned semiconductor nanowires using focused vector beams
Second and third harmonic generation in few-layer gallium telluride by multiphoton microscopy
Multiphoton Characterization of Two-Dimensional Layered Materials
Tunable nonlinear effects through focused spatially phase-shaped beams
Water Mist-induced Parallel Self-alignment of Microchips on Hydrophilic/Super-hydrophobic Nanostructured Surface
Properties of AlN Film Grown by Plasma Enhanced Atomic Layer Deposition
Photonic crystals with ring-shaped holes on silicon-on-insulator
Self-catalyzed growth and properties of InP nanowires
Reduction of threading dislocation density in AlGaN epilayers by a multistep technique
In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
In-situ composition determination of MOVPE grown InGaAsN quantum wells
Hydrogen treatment of InGaN/GaN MQW structures
The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance
Magnesium doping of group-III nitrides for LED- and laser structures
Inductively coupled plasma etching of III-nitride based laser structure using CI2/BCI3/Ar gasses
Low Temterature GaAs on Ge substrate bu metalorganic vapor phase epitaxy
Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Low air-fill-factor photonic crystals with ring-shaped holes in a triangular lattice
Photonic Crystal Slabs with Ring-Shaped holes in a Triangular Lattice
InAs pixel matrix detector structures fabricated by diffusion of Zn utilising metal-organic vapour phase epitaxy
Characterization of photonic crystal waveguides fabricated in silicon-on-insulator
Characterization of photonic crystal waveguides using Fabry-Perot resonances
Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy
Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy
High-index-contrast Optical Weveguides on Silicon
Optical waveguides on polysilicon-on-insulator
Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
In (Ga)As quantum dots on Ge substrate
Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Optical waveguides on polysilicon-on-insulator
Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Effect of growth conditions on the defect transitions in Ga(In)NAs
Growth and optical properties of GaInNAs quantum wells
Epitaxial growth of GaAs on silicon-on-ilsulator
Growth and defects of GaAsN layers on GaAs
Optoelectronics Laboratory Activity Report 1996-1999
High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Ultrafast relaxation dynamics in strain-induced quantum dots
Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Mesoscopic Zeeman effect in parabolic quantum dots
Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Optical properties of self-organized InGaAs/InP dots.
Fabrication, characterization and modelling of stain-induced quantum dots.
Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
InGaAs quantum dots induced by self-organized InP stressors.
Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.
Recombination processes in strain-induced InGaAs quantum dots.
Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.
Synchrotron X-ray topographic studies of strain in silicon wafers with integrated circuits.
Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
X-ray diffraction study of GaSb on GaAs grown by MOVPE
Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells
Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates
Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Metallo organic vapour phase epitaxy of III-V semiconductors
The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Accurate determination of the layer thicnesses of a GaAs/AlAs superlattice
Photoreflectance of Bragg confined transitions in a superlattice with multiquantum barries
Metallo-organic vapor phase system
Photoreflectance study of photovoltage effects in GaAs diode structures
Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Liquid phase epitaxial (LPE) technique
High Speed InGaAsP/InP multiple quantum well laser
Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers
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