Markku Sopanen
Associate Professor, Electrical engineering at Aalto University School of Business

Schools
- Aalto University School of Business
Links
Biography
Aalto University School of Business
Peer-reviewed scientific articles
Journal article-refereed, Original researchAtomic layer etching of gallium nitride (0001)
Kauppinen, Christoffer; Khan, Sabbir Ahmed; Sundqvist, Jonas; Suyatin, Dmitry B.; Suihkonen, Sami; Kauppinen, Esko I.; Sopanen, Markku2017 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Deposition
Kauppinen, Christoffer; Isakov, Kirill; Sopanen, Markku2017 in ACS APPLIED MATERIALS AND INTERFACES (AMER CHEMICAL SOC)ISSN: 1944-8244Investigation of significantly high barrier height in Cu/GaN Schottky diode
Garg, Manjari; Kumar, Ashutosh; S., Nagarajan; Sopanen, M.; Singh, R.2016 in AIP ADVANCES (AMER INST PHYSICS)ISSN: 2158-3226A technique for large-area position-controlled growth of GaAs nanowire arrays
Kauppinen, Christoffer; Haggren, Tuomas; Kravchenko, Aleksandr; Jiang, Hua; Huhtio, Teppo; Kauppinen, Esko; Dhaka, Veer; Suihkonen, Sami; Kaivola, Matti; Lipsanen, Harri; Sopanen, Markku2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Non-destructive method for strain imaging in an individual GaN nanorod by confocal Raman technique
Nagarajan, S.; Sopanen, M.2016 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Fluorescence-enhancing plasmonic silver nanostructures using azopolymer lithography
Pale, Ville; Kauppinen, Christoffer; Selin, Jorma; Sopanen, Markku; Tittonen, Ilkka2016 in RSC ADVANCES (ROYAL SOC CHEMISTRY)ISSN: 2046-2069Two-Photon Absorption in GaAs1-x-yPyNx Intermediate-Band Solar Cells
Jussila, Henri; Kivisaari, Pyry; Lemettinen, Jori; Tanaka, T.; Sopanen, Markku2015 in PHYSICAL REVIEW APPLIED (AMER PHYSICAL SOC)ISSN: 2331-7019Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode
Kumar, Ashutosh; Subramaniyam, Nagarajan; Sopanen, M.; Kumar, V.; Singh, R.2015 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)ISSN: 0268-1242Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys
Jussila, H.; Yu, K.M.; Kujala, J.; Tuomisto, F.; Subramaniyam, Nagarajan; Lemettinen, J.; Huhtio, T.; Tuomi, T.O.; Lipsanen, H.; Sopanen, M.2014 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
Mattila, Päivi; Bosund, Markus; Jussila, Henri; Aierken, Abuduwayiti; Riikonen, Juha; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku2014 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Diffusion injected multi-quantum well light-emitting diode structure
Riuttanen, Lauri; Kivisaari, Pyry; Nykänen, Henri; Svensk, Olli; Suihkonen, Sami; Oksanen, Jani; Tulkki, Jukka; Sopanen, Markku2014 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Optical degradation and defect activation in MOVPE grown near surface InGaN quantum wells under low energy electron beam irradiation
Riuttanen, Lauri; Nykänen, Henri; Suihkonen, Sami; Sopanen, Markku2014 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Stress distribution in GaN nanopillars using confocal Raman mapping technique
Subramaniyam, Nagarajan; Svensk, Olli; Lehtola, Lauri; Lipsanen, Harri; Sopanen, Markku2014 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection
Tilli, Juha-Matti; Jussila, Henri; Yu, Kin Man; Huhtio, Teppo; Sopanen, Markku2014 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Optical propertiesofelectronbeamand gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures
Aierken, Abuduwayiti; Guo, Qi; Huhtio, Teppo; Sopanen, Markku; He, Chengfa; Li, Yudong; Wen, Ling; Ren, Diyuan2013 in RADIATION PHYSICS AND CHEMISTRY (Elsevier Limited)ISSN: 0969-806XEnhanced light extraction from InGaN/GaN quantum wells with silver gratings
Homeyer, Estelle; Mattila, Päivi; Oksanen, Jani; Sadi, Toufik; Nykänen, Henri; Suihkonen, Sami; Symonds, Clementine; Tulkki, Jukka; Tuomisto, Filip; Sopanen, Markku; Bellessa, Joel2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography
Jussila, Henri; Subramaniyam, Nagarajan; Sintonen, Sakari; Suihkonen, Sami; Lankinen, Aapo; Huhtio, Teppo; Paulmann, Carsten; Lipsanen, Harri; Tuomi, Turkka; Sopanen, Markku2013 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090Migration kinetics of ion-implanted beryllium in ZnO and GaN
Koskelo, Otso; Köster, Ulli; Tuomisto, Filip; Helariutta, Kerttuli; Sopanen, Markku; Suihkonen, Sami; Svensk, Olli; Räisänen, Jyrki2013 in PHYSICA SCRIPTA (IOP Publishing Ltd.)ISSN: 0031-8949Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by MetalOrganic Vapor Phase Epitaxy in H2 and N2 Ambients
Nykänen, Henri; Suihkonen, Sami; Svensk, Olli; Sopanen, Markku; Tuomisto, Filip2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Band-edge luminescence degradation by low energy electron beam irradiation in GaN grown by metal-organic vapor phase epitaxy in H2 and N 2 ambients
Nykänen, Henri; Suihkonen, Sami; Svensk, Olli; Sopanen, Markku; Tuomisto, Filip2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN
Nykänen, Henri; Suihkonen, Sami; Sopanen, Markku; Tuomisto, Filip2013 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation
Repo, Eveliina; Rengaraj, Selvaraj; Pulkka, Susanna; Castangnoli, Emmanuelle; Suihkonen, Sami; Sopanen, Markku; Sillanpää, Mika2013 in SEPARATION AND PURIFICATION TECHNOLOGY (Elsevier Science B.V.)ISSN: 1383-5866Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis
Riuttanen, Lauri; Kivisaari, Pyry; Mäntyoja, Nikolai; Oksanen, Jani; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku2013 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Strain-compensated GaPN/GaP heterostructure on (0?0?1) silicon substrates for intermediate band solar cells
Subramaniyam, Nagarajan; Jussila, Henri; Lemettinen, Jori; Banerjee, Kaustuv; Sopanen, Markku; Lipsanen, Harri2013 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
Subramaniyam, Nagarajan; Svensk, Olli; Ali, Muhammad; Naresh-Kumar, Gunasekar; Trager-Cowan, Carol; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates
Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T.; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Analysis of Dislocations Generated during MetalOrganic Vapor Phase Epitaxy of GaN on Patterned Templates
Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Fabrication of GaN Structures with Embedded Network of Voids Using Pillar Patterned GaN Templates
Svensk, Olli; Ali, Muhammad; Riuttanen, Lauri; Törmä, Pekka; Sintonen, Sakari; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2013 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN
Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, V.N.; Bert, N.A.; Odnoblyudov, M.A.; Bougrov, V.E.2012 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning
Ali, Muhammad; Riuttanen, Lauri; Kruse, M; Suihkonen, Sami; Romanov, A.E.; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2012 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)ISSN: 0268-1242High Quality GaAs Nanowires Grown on Glass Substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 in NANO LETTERS (AMER CHEMICAL SOC)ISSN: 1530-6984Growth and characterization of GaP layers on silicon substrates by metal-organic vapour phase epitaxy
Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Riikonen, Juha; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis
Jussila, Henri; Subramaniyam, Nagarajan; Huhtio, Teppo; Lipsanen, Harri; Tuomi, Turkka; Sopanen, Markku2012 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Jussila, Henri; Mattila, Päivi; Oksanen, J.; Perros, Alexander; Riikonen, Juha; Bosund, Markus; Varpula, Aapo; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells
Kopylov, O.; Shirazi, R.; Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Sopanen, Markku; Kardynal, Beata2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
Mattila, Päivi; Bosund, Markus; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku2012 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Low energy electron beam induced damage on gallium nitride based materials
Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Sopanen, Markku2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Ga-vacancy activation under low energy electron irradiation in GaN-based materials
Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukaz; Sopanen, Markku; Tuomisto, Filip2012 in MRS Online Proceedings (Wiley-VCH Verlag)ISSN: 1946-4274Low energy electron beam induced vacancy activation in GaN
Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukasz; Sopanen, Markku; Tuomisto, Filip2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN
Sintonen, Sakari; Ali, Muhammad; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, Carsten; Tuomi, Turkka O.; Zajac, Marcin2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells
Subramaniyam, Nagarajan; Ali, M.; Jussila, Henri; Mattila, Päivi; Aierken, Abuduwayiti; Sopanen, Markku; Lipsanen, Harri2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations,
Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O.; Shirazi, R.; Lipsanen, Harri; Sopanen, Markku; Kardynal, Beata2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Void shape control in GaN re-grown on hexagonally patterned mask-less GaN
Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.2011 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells
Khalil, Hagir; Sun, Yun; Balkan, Naci; Amann, Andreas; Sopanen, Markku2011 in NANOSCALE RESEARCH LETTERS (Springer New York)ISSN: 1931-7573A single-pixel wireless contact lens display
Lingley, A.R.; Ali, M.; Liao, Y.; Mirjalili, R.; Klonner, M.; Sopanen, M.; Suihkonen, S.; Shen, T.; Otis, B.P.; Lipsanen, H.; Parviz, B.A.2011 in JOURNAL OF MICROMECHANICS AND MICROENGINEERING (IOP PUBLISHING LTD)ISSN: 0960-1317Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer
Nagarajan, S.; Aierken, A.; Jussila, H.; Banerjee, K.; Sopanen, M.; Lipsanen, H.2011 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)ISSN: 0268-1242Low energy electron beam induced damage on InGaN/GaN quantum well structure
Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Quillet, Emilie; Homeyer, Estelle; Bellessa, Joel; Sopanen, Markku2011 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979X-ray diffraction study of GaN grown on patterned substrates
Sintonen, Sakari; Ali, Muhammad; Törmä, Pekka T.; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, C.; Tuomi, Turkka2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode
Subramaniyam, Nagarajan; Sopanen, Markku; Lipsanen, Harri; Hong, Chang-Hee; Suh, Eun-Kyung2011 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Patterning of sapphire / GaN substrates
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.; Nevedomsky, V.; Bert, N2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
Bosund, M.; Mattila, P.; Aierken, A.; Hakkarainen, T.; Koskenvaara, H.; Sopanen, M.; Airaksinen, V.M.2010 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry
Rangel-Kuoppa, V.T.; Sopanen, M.; Lipsanen, H.2010 in JOURNAL OF NANO RESEARCH (Trans Tech Publications)ISSN: 1662-5250Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements
Sintonen, Sakari; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka Tuomas; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri2010 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors
Statkute, Gintare; Nasibulin, Albert G.; Sopanen, Markku; Hakkarainen, Teppo; Kauppinen, Esko; Lipsanen, Harri2010 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Defect studies with positrons: what could we learn on III-nitride heterostructures?
Tuomisto, Filip; Mäki, Jussi-Matti; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku2010 in Journal of Physics: Conference Series (IOP Publishing Ltd.)ISSN: 1742-6588InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates
Törmä, Pekka; Ali, Muhammad; Svensk, Olli; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Mulot, Mikael; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.2010 in CRYSTENGCOMM (ROYAL SOC CHEMISTRY)Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation
Ali, Muhammad; Svensk, Olli; Zhen, Zhu; Suihkonen, Sami; Törmä, Pekka; Lipsanen, Harri; Sopanen, Markku; Hjort, K.; Jensen, J.2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)ISSN: 0921-4526Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2009 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922Cascaded exciton emission of an individual strain-induced quantum dot
Schülein, F.J.R.; Laucht, A.; Riikonen, J.; Mattila, M.; Sopanen, M.; Lipsanen, H.; Finley, J.J.; Wixforth, A.; Krenner, H.J.2009 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs
Törmä, Pekka; Svensk, Olli; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.2009 in SOLID-STATE ELECTRONICS (Elsevier Limited)ISSN: 0038-1101An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE
Törmä, Pekka T.; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Kostamo, Pasi; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)ISSN: 0921-4526InAs island-to-ring transformation by a partial capping layer
Aierken, A.; Hakkarainen, Teppo; Riikonen, J.; Sopanen, M.2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy
Aierken, Abuduwayiti; Hakkarainen, Teppo; Sopanen, Markku; Riikonen, Juha; Sormunen, Jaakko; Mattila, Marco; Lipsanen, Harri2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy
Aierken, Abuduwayiti; Hakkarainen, Teppo; Riikonen, Juha; Sopanen, Markku2008 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures
Ali, Muhammad; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav2008 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351Carrier dynamics in strain induced quantum dots modeled by rate equations and Gaussian excitation beam distribution
Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2008 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Odnoblyudo, M.A.; Bougrov, Vladislav2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer
Svensk, Olli; Törmä, Pekka; Suihkonen, Sami; Ali, Muhammad; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
Törmä, Pekka; Svensk, Olli; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exhange
Aierken, Abuduwayiti; Riikonen, Juha; Mattila, Marco; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2007 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)
Aierken, Abuduwayiti; Hakkarainen, Teppo; Tiilikainen, Jouni; Mattila, Marco; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri2007 in Journal of crystal growth (Elsevier)Reduction of threading dislocation density in A1_(0.12)Ga_(0.88)N epilayers by a multistep technique
Lang, Teemu; Odnoblydov, Maxim; Bougrov, Vladislav; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri2007 in Journal of crystal growth (Elsevier)Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique
Lang, T.; Odnoblyudov, M. A.; Bougrov, V. E.; Suihkonen, S.; Svensk, O.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Tensile-strained GaAsN quantum dots on InP
Pohjola, P.; Hakkarainen, T.; Koskenvaara, Hannu; Sopanen, M.; Lipsanen, H.; Sainio, J.2007 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures
Reentilä, O.; Mattila, M.; Sopanen, Markku; Lipsanen, H.2007 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
Suihkonen, Sami; Lang, Teemu; Svensk, Olli; Sormunen, Jaakko; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim; Bougrov, Vladislav2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Inhibition of negative differential resistance in modulation-doped n-type GaxIn1-xNyAs1-y/GaAs quantum wells
Sun, Y.; Vaughan, M.P.; Agarwal, A.; Yilmaz, M.; Ulug, B.; Ulug, A.; Balkan, N.; Sopanen, Markku; Reentilä, O.; Mattila, M.; Fontaine, C.; Arnoult, A.2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)Effect of growth conditions on electrical properties of Mg-doped p-GaN
Svensk, Olli; Suihkonen, Sami; Lang, Teemu; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells
Aierken, Abuduwayiti; Riikonen, Juha; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Experimental investigation towards a periodically pumped single-photon source
Bödefeld, C.; Ebbecke, J.; Toivonen, J.; Sopanen, M.; Lipsanen, H.; Wixforth, A.2006 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121Carrier dynamics in strain-induced InGaAsP/InP quantum dots
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Diffusion injected multi-quantum well light-emitting diode structure
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2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Band-edge luminescence degradation by low energy electron beam irradiation in GaN grown by metal-organic vapor phase epitaxy in H2 and N 2 ambients
Nykänen, Henri; Suihkonen, Sami; Svensk, Olli; Sopanen, Markku; Tuomisto, Filip
2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN
Nykänen, Henri; Suihkonen, Sami; Sopanen, Markku; Tuomisto, Filip
2013 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation
Repo, Eveliina; Rengaraj, Selvaraj; Pulkka, Susanna; Castangnoli, Emmanuelle; Suihkonen, Sami; Sopanen, Markku; Sillanpää, Mika
2013 in SEPARATION AND PURIFICATION TECHNOLOGY (Elsevier Science B.V.)ISSN: 1383-5866
Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis
Riuttanen, Lauri; Kivisaari, Pyry; Mäntyoja, Nikolai; Oksanen, Jani; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku
2013 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Strain-compensated GaPN/GaP heterostructure on (0?0?1) silicon substrates for intermediate band solar cells
Subramaniyam, Nagarajan; Jussila, Henri; Lemettinen, Jori; Banerjee, Kaustuv; Sopanen, Markku; Lipsanen, Harri
2013 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)ISSN: 0022-3727
Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
Subramaniyam, Nagarajan; Svensk, Olli; Ali, Muhammad; Naresh-Kumar, Gunasekar; Trager-Cowan, Carol; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri
2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates
Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T.; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.
2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Analysis of Dislocations Generated during MetalOrganic Vapor Phase Epitaxy of GaN on Patterned Templates
Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.
2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Fabrication of GaN Structures with Embedded Network of Voids Using Pillar Patterned GaN Templates
Svensk, Olli; Ali, Muhammad; Riuttanen, Lauri; Törmä, Pekka; Sintonen, Sakari; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri
2013 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN
Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, V.N.; Bert, N.A.; Odnoblyudov, M.A.; Bougrov, V.E.
2012 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning
Ali, Muhammad; Riuttanen, Lauri; Kruse, M; Suihkonen, Sami; Romanov, A.E.; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.
2012 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)ISSN: 0268-1242
High Quality GaAs Nanowires Grown on Glass Substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri
2012 in NANO LETTERS (AMER CHEMICAL SOC)ISSN: 1530-6984
Growth and characterization of GaP layers on silicon substrates by metal-organic vapour phase epitaxy
Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Riikonen, Juha; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri
2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis
Jussila, Henri; Subramaniyam, Nagarajan; Huhtio, Teppo; Lipsanen, Harri; Tuomi, Turkka; Sopanen, Markku
2012 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Jussila, Henri; Mattila, Päivi; Oksanen, J.; Perros, Alexander; Riikonen, Juha; Bosund, Markus; Varpula, Aapo; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku
2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells
Kopylov, O.; Shirazi, R.; Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Sopanen, Markku; Kardynal, Beata
2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
Mattila, Päivi; Bosund, Markus; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku
2012 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Low energy electron beam induced damage on gallium nitride based materials
Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Sopanen, Markku
2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Ga-vacancy activation under low energy electron irradiation in GaN-based materials
Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukaz; Sopanen, Markku; Tuomisto, Filip
2012 in MRS Online Proceedings (Wiley-VCH Verlag)ISSN: 1946-4274
Low energy electron beam induced vacancy activation in GaN
Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukasz; Sopanen, Markku; Tuomisto, Filip
2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN
Sintonen, Sakari; Ali, Muhammad; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, Carsten; Tuomi, Turkka O.; Zajac, Marcin
2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells
Subramaniyam, Nagarajan; Ali, M.; Jussila, Henri; Mattila, Päivi; Aierken, Abuduwayiti; Sopanen, Markku; Lipsanen, Harri
2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations,
Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O.; Shirazi, R.; Lipsanen, Harri; Sopanen, Markku; Kardynal, Beata
2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Void shape control in GaN re-grown on hexagonally patterned mask-less GaN
Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.
2011 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells
Khalil, Hagir; Sun, Yun; Balkan, Naci; Amann, Andreas; Sopanen, Markku
2011 in NANOSCALE RESEARCH LETTERS (Springer New York)ISSN: 1931-7573
A single-pixel wireless contact lens display
Lingley, A.R.; Ali, M.; Liao, Y.; Mirjalili, R.; Klonner, M.; Sopanen, M.; Suihkonen, S.; Shen, T.; Otis, B.P.; Lipsanen, H.; Parviz, B.A.
2011 in JOURNAL OF MICROMECHANICS AND MICROENGINEERING (IOP PUBLISHING LTD)ISSN: 0960-1317
Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer
Nagarajan, S.; Aierken, A.; Jussila, H.; Banerjee, K.; Sopanen, M.; Lipsanen, H.
2011 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)ISSN: 0268-1242
Low energy electron beam induced damage on InGaN/GaN quantum well structure
Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Quillet, Emilie; Homeyer, Estelle; Bellessa, Joel; Sopanen, Markku
2011 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
X-ray diffraction study of GaN grown on patterned substrates
Sintonen, Sakari; Ali, Muhammad; Törmä, Pekka T.; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, C.; Tuomi, Turkka
2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode
Subramaniyam, Nagarajan; Sopanen, Markku; Lipsanen, Harri; Hong, Chang-Hee; Suh, Eun-Kyung
2011 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Patterning of sapphire / GaN substrates
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.; Nevedomsky, V.; Bert, N
2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
Bosund, M.; Mattila, P.; Aierken, A.; Hakkarainen, T.; Koskenvaara, H.; Sopanen, M.; Airaksinen, V.M.
2010 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332
Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry
Rangel-Kuoppa, V.T.; Sopanen, M.; Lipsanen, H.
2010 in JOURNAL OF NANO RESEARCH (Trans Tech Publications)ISSN: 1662-5250
Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements
Sintonen, Sakari; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka Tuomas; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri
2010 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors
Statkute, Gintare; Nasibulin, Albert G.; Sopanen, Markku; Hakkarainen, Teppo; Kauppinen, Esko; Lipsanen, Harri
2010 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Defect studies with positrons: what could we learn on III-nitride heterostructures?
Tuomisto, Filip; Mäki, Jussi-Matti; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku
2010 in Journal of Physics: Conference Series (IOP Publishing Ltd.)ISSN: 1742-6588
InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates
Törmä, Pekka; Ali, Muhammad; Svensk, Olli; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Mulot, Mikael; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.
2010 in CRYSTENGCOMM (ROYAL SOC CHEMISTRY)Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation
Ali, Muhammad; Svensk, Olli; Zhen, Zhu; Suihkonen, Sami; Törmä, Pekka; Lipsanen, Harri; Sopanen, Markku; Hjort, K.; Jensen, J.
2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)ISSN: 0921-4526
Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri
2009 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Cascaded exciton emission of an individual strain-induced quantum dot
Schülein, F.J.R.; Laucht, A.; Riikonen, J.; Mattila, M.; Sopanen, M.; Lipsanen, H.; Finley, J.J.; Wixforth, A.; Krenner, H.J.
2009 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs
Törmä, Pekka; Svensk, Olli; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.
2009 in SOLID-STATE ELECTRONICS (Elsevier Limited)ISSN: 0038-1101
An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE
Törmä, Pekka T.; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Kostamo, Pasi; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.
2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)ISSN: 0921-4526
InAs island-to-ring transformation by a partial capping layer
Aierken, A.; Hakkarainen, Teppo; Riikonen, J.; Sopanen, M.
2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy
Aierken, Abuduwayiti; Hakkarainen, Teppo; Sopanen, Markku; Riikonen, Juha; Sormunen, Jaakko; Mattila, Marco; Lipsanen, Harri
2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332
Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy
Aierken, Abuduwayiti; Hakkarainen, Teppo; Riikonen, Juha; Sopanen, Markku
2008 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484
Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures
Ali, Muhammad; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav
2008 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)ISSN: 1862-6351
Carrier dynamics in strain induced quantum dots modeled by rate equations and Gaussian excitation beam distribution
Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2008 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Odnoblyudo, M.A.; Bougrov, Vladislav
2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer
Svensk, Olli; Törmä, Pekka; Suihkonen, Sami; Ali, Muhammad; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav
2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
Törmä, Pekka; Svensk, Olli; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav
2008 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exhange
Aierken, Abuduwayiti; Riikonen, Juha; Mattila, Marco; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2007 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)
Aierken, Abuduwayiti; Hakkarainen, Teppo; Tiilikainen, Jouni; Mattila, Marco; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri
2007 in Journal of crystal growth (Elsevier)Reduction of threading dislocation density in A1_(0.12)Ga_(0.88)N epilayers by a multistep technique
Lang, Teemu; Odnoblydov, Maxim; Bougrov, Vladislav; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri
2007 in Journal of crystal growth (Elsevier)Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique
Lang, T.; Odnoblyudov, M. A.; Bougrov, V. E.; Suihkonen, S.; Svensk, O.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.
2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Tensile-strained GaAsN quantum dots on InP
Pohjola, P.; Hakkarainen, T.; Koskenvaara, Hannu; Sopanen, M.; Lipsanen, H.; Sainio, J.
2007 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures
Reentilä, O.; Mattila, M.; Sopanen, Markku; Lipsanen, H.
2007 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
Suihkonen, Sami; Lang, Teemu; Svensk, Olli; Sormunen, Jaakko; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim; Bougrov, Vladislav
2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Inhibition of negative differential resistance in modulation-doped n-type GaxIn1-xNyAs1-y/GaAs quantum wells
Sun, Y.; Vaughan, M.P.; Agarwal, A.; Yilmaz, M.; Ulug, B.; Ulug, A.; Balkan, N.; Sopanen, Markku; Reentilä, O.; Mattila, M.; Fontaine, C.; Arnoult, A.
2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)Effect of growth conditions on electrical properties of Mg-doped p-GaN
Svensk, Olli; Suihkonen, Sami; Lang, Teemu; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav
2007 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells
Aierken, Abuduwayiti; Riikonen, Juha; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri
2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Experimental investigation towards a periodically pumped single-photon source
Bödefeld, C.; Ebbecke, J.; Toivonen, J.; Sopanen, M.; Lipsanen, H.; Wixforth, A.
2006 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121
Carrier dynamics in strain-induced InGaAsP/InP quantum dots
Koskenvaara, Hannu; Riikonen, Juha; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri
2006 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)ISSN: 1386-9477
Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri
2006 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers
Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Romanov, A.E.; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri
2006 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)ISSN: 1862-6300
Metal contacts on InN Proposal for Schottky contact
Rangel-Kuoppa, V.T.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.
2006 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Nitrogen content of GaAsN quantum wells by in-situ monitoring during MOVPE growth
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2006 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
In-situ determination of nitrogen content in InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2006 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring
Reentilä, outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots
Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Aierken, Abuduwayiti; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2006 in NANOTECHNOLOGY (IOP PUBLISHING LTD)Growth of InN by vertical flow MOVPE
Suihkonen, S.; Sormunen, J.; Rangel-Kuoppa, V.T.; Koskenvaara, H.; Sopanen, Markku
2006 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
MOCVD growth of GaN islands by multistep nucleation layer technique
Lang, Teemu; Odnoblydov, M.; Bourgrov, V.; Sopanen, Markku
2005 in Journal of crystal growth (Elsevier)Synchrotron x-ray topographic study of dislocations and stacking faults in InAs
Lankinen, Aapo; Tuomi, Turkka; Riikonen, Juha; Knuuttila, Lauri; Lipsanen, Harri; Sopanen, Markku; Danilewsky, A.; McNally, J.; "O'Reilly", L.; Zhilyaev, Y.; Fedorov, L.; Sipilä, H.; Vaijärvi, S.; Simon, R.; Lumb, D.; Owens, A.
2005 in Journal of crystal growth (Elsevier)Highly Tunable Emission from Strain-Induced InGasp/InP Quantum Dots
Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)InGaAs/InP quantum dots induced by self-organized InAs stressors-islands
Riikonen, Juha; Sormunen, Jaakko; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
Sormunen, Jaakko; Riikonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Transformation of Self-Assembled InAs/InP Quantum Dots into Quantum Rings without Capping
Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri
2005 in NANO LETTERS (AMER CHEMICAL SOC)Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAS(P)/InP
Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2005 in NANOTECHNOLOGY (IOP PUBLISHING LTD)Structural and optical properties of GaInNAs/GaAs quantum structures
Hakkarainen, Teppo; Toivonen, Juha; Koskenvaara, Hannu; Sopanen, Markku; Lipsanen, Harri
2004 in JOURNAL OF PHYSICS: CONDENSED MATTER (IOP PUBLISHING LTD)Self assembled In(Ga)As islands on Ge substrate
Knuuttila, Lauri; Korkala, T.; Sopanen, Markku; Lipsanen, Harri
2004 in Journal of crystal growth (Elsevier)The morphology of an InP wettig layer on GaAs
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2004 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)Passivation of GaAS surface by ultrathin epitaxial GaN layer
Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2004 in Journal of crystal growth (Elsevier)GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor
Sormunen, Jaakko; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri
2004 in Journal of crystal growth (Elsevier)Morphology of ultra-thin cubic GaN layers on GaAs(100) grown by MOVPE with DMHy as nitrogen source
Sormunen, Jaakko; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri
2004 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri
2003 in Journal of crystal growth (Elsevier)In(Ga)As quantum dots on Ge substrate
Knuuttila, Lauri; Kainu, Kalle; Sopanen, Markku; Lipsanen, Harri
2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, Hannu; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Growth of GaAs on polycrystalline silicon-on-insulator
Riikonen, Juha; Säynätjoki, Antti; Sopanen, Markku; Lipsanen, Harri; Ahopelto, Jouni
2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells
Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2003 in IEE Proceedings-Optoelectronics (Springer New York)Observation of defect complexes containing Ga vacancies in GaAsN
Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri; Oila, Juha; Saarinen, K.
2003 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Misfit dislocations in GaAsN/GaAs interface
Toivonen, Juha; Tuomi, Turkka; Riikonen, Juha; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri; McNally, P.J; Chen, W.; Lowney, D.
2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy
Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri
2002 in Journal of crystal growth (Elsevier)Pumping of quantum dots with surface acoustic waves
Bödefeld, C.; Wixfoth, A.; Toivonen, J.; Sopanen, M.; Lipsanen, H.
2001 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)ISSN: 0370-1972
Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm
Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri
2001 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)Longitudinal Stark effect in parabolic quantum dots
Rinaldi, Ross; DeGiorgi, Milena; DeVittorio, Massimo; Melcarne, Angelo; Visconti, Paolo; Cingolani, Roberto; Lipsanen, Harri; Sopanen, Markku; Drufva, T.; Tulkki, Jukka
2001 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Influence of Coulomb and exchange interation on quantum dot magnetoluminescence up to B=45T
Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.
2000 in Physica Status Solidi A (Japan Society of Applied Physics)Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45 T)
Cingolani, R.; De Giorgi, M.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.
2000 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)ISSN: 1386-9477
Influence on coulomb and exhange interaction on quantum dot magnetoluminescence up to 45 t.
Congolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.
2000 in Physics Status Solidi A. (Elsevier)Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures
Lingk, C.; Helfer, W.; von Plessen, G.; Feldmann, J.; Stock, K.; Feise, W.M.; Citrin, D.S.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Tulkki, J.; Ahopelto, J.
2000 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121
Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs
Sopanen, M.; Xin, H.P.; Tu, C.W.
2000 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
2000 in Journal of crystal growth (Elsevier)Trailoring of energy levels in strain-induced quantum dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.
1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)Tailoring of energy levels in strain-induced quantum dots
Ahopelto, Jouni; Sopanen, Markku; Lipsanen, Harri
1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Influence of Coulomb and Exchange Interaction on Quantum Dot Magnetoluninescence up to B = 45 T
Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Uchida, K.; Miura, N.; Arakawa, Y.
1999 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)ISSN: 1862-6300
Electron-hole correlation in quantum dots under a high magnetic field (up to 45T)
Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, Jukka; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.
1999 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)ISSN: 0031-9007
Growth and optical properties of strain-induced quantum dots
Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.; Braskén, M.; Lindberg, M.
1999 in PHYSICA SCRIPTA (IOP Publishing Ltd.)ISSN: 0031-8949
Effect of InP passivation on carrier recombination in InGaAs/GaAs surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandman, J.; Feldmann, J.
1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)ISSN: 0021-4922
Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.
1999 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.
1999 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Temperature dependence of carrier relaxation in strain-induced quantum dots
Brasken, M.; Lindberg, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.
1998 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121
Magneto-optical properties of strain-induced InxGa1−xAs parabolic quantum dots
Rinaldi, R.; Mangino, R.; Cingolani, R.; Lipsanen, H.; Sopanen, Markku; Tulkki, J.; Brasken, M.; Ahopelto, J.
1998 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121
Strain-induced quantum dot superlattice
Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.
1998 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)ISSN: 1386-9477
Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriguez, E.; Höfling, E.; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.
1997 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Strain-Induced Quantum Dots: Fabrication and Optical Properties
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.; Grosse, S.; Won Plessen, G.; Feldmann, J.; Hayes, G.; Philips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.
1997 in Superlattices, Microstructures and Microdevices (AMERICAN INSTITUTE OF PHYSICS)Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects
Grosse, S.; Sandman, J.; von Plessen, G.; Feldman, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.
1997 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121
Optical characterisation of self organised InGaAs/InP heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Sotomayor Torres, C.M.; Gontijo, I.; Buller, G.S.
1997 in Institute of Physics Conference Series (AMER PHYSICAL SOC)Carrier relaxation in strain-induced (GaIn)As quantum dots
Sandman, J.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.
1997 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)ISSN: 1862-6300
Ultrafast relaxation dynamics in strain-induced quantum dots
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1997 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)ISSN: 0370-1972
Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy
Taskinen, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Tuomi, T.; Ahopelto, J.
1997 in Surface Science (Elsevier)ISSN: 0039-6028
Self-Organized InAs Islands on (100) InP by Metalorganic Vapor-Phase Epitaxcy
Taskinen, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Tuomi, T.; Ahopelto, J.
1997 in Surface Science (Elsevier)Metalorganic vapor phase epitaxial growth of A1GaSb and A1GaAsSb using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.
1996 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Enhanced optical properties of in situ passivated near-surface AlxGa1-xAs/GaAs quantum wells
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1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors
Lipsanen, H.; Sopanen, M.; Ahopelto, J.
1996 in SOLID-STATE ELECTRONICS (Elsevier Limited)ISSN: 0038-1101
Zeeman effect in parabolic quantum dots
Rinaldi, R.; Guigno, P.; Cingolani, R.; Lipsanen, Harri; Sopanen, M.; Tulkki, J.; Ahopelto, J.
1996 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)ISSN: 0031-9007
Red luminescence from strain-induced GaInP quantum dots
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1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching
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1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots
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1995 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)ISSN: 1098-0121
Recombination processes in strain-induced InGaAs quantum dots
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1995 in NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D: CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS (Editrice Compositori s.r.l.)ISSN: 0392-6737
Growth of high-quality GaSb by metalorganic vapor phase epitaxy.
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Tuomi, T.
1995 in JOURNAL OF ELECTRONIC MATERIALS (SPRINGER)ISSN: 0361-5235
Strain-induced quantum dots by self-organized stressors
Sopanen, M.; Lipsanen, H.; Ahopelto, J.
1995 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.
1995 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Fabrication of Nanostructures using MBE and MOVPE
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.; Tuomi, T.; Airaksinen, V.M.; Sinkkonen, J.; Siren, E.
1994 in PHYSICA SCRIPTA (IOP Publishing Ltd.)ISSN: 0031-8949
Selective growth of InGaAs on nanoscale InP islands
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.; Niemi, H.
1994 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE
Lipsanen, H.; Ahopelto, J.; Koljonen, T.; Sopanen, M.
1994 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Photoluminescene of buried InGaAs grown on nanoscale InP islands by MOVPE
Lipsanen, H.; Ahopelto, J.; Koljonen, T.; Sopanen, M.
1994 in Journal of crystal growth (Elsevier)Growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Tuomi, T.
1994 in Journal of crystal growth (Elsevier)ISSN: 0022-0248
Book section, Chapters in research booksMassakurssien yhteiset ongelmat
Alestalo, Pekka; Belitz, Sanna; Sopanen, Markku; Tuhkuri, Jukka; Virtanen, Satu2003 Formation of excess donors during high-dose 74Ge+ Ion implantation
Tuomi, T.; Xia, Z.; Ristolainen, E.; Elliman, R.; Ronkainen, H.; Eranen, S.; Kuivalainen, P.; Sopanen, M.; Holloway, P.1995
Massakurssien yhteiset ongelmat
Alestalo, Pekka; Belitz, Sanna; Sopanen, Markku; Tuhkuri, Jukka; Virtanen, Satu
2003 Formation of excess donors during high-dose 74Ge+ Ion implantation
Tuomi, T.; Xia, Z.; Ristolainen, E.; Elliman, R.; Ronkainen, H.; Eranen, S.; Kuivalainen, P.; Sopanen, M.; Holloway, P.
1995 Conference proceedingsStudy Of 1/f Noise Characteristics In Cu/n-GaN Schottky Barrier Diode
Garg, Manjari; Kumar, Ashutosh; Subramaniyam, Nagarajan; Sopanen, M.; Singh, R.2016 in AIP Conference Proceedings (AMER INST PHYSICS)ISBN: 978-0-7354-1378-8ISSN: 0094-243XGrowth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars
Subramaniyam, Nagarajan; Svensk, Olli; Amit, P.; Shah, Ali; Rahman, Azizur; Maliakkal, Carina B.; Bhattacharya, Arnab; Lipsanen, Harri; Sopanen, Markku2014 Structural study of crystal defects in thin GaP layers on (100) silicon substrates by X-ray diffraction
Jussila, Henri; Subramaniyam, Nagarajan; Sintonen, Sakari; Huhtio, Teppo; Tuomi, Turkka O.; Lipsanen, Harri; Sopanen, Markku2012 Defect activation in MOVPE GaN under low energy electron beam irradiation
Nykänen, Henri; Suihkonen, Sami; Kilanski, Lucasz; Sopanen, Markku; Tuomisto, Filip2012 Growth and Characterization of GaP Layers on Silicon Substrates by MOVPE
Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2011 Characteristics of InGaAs/GaAsN quantum dot solar cells.
Nagarajan, S.; Ali, M.; Mattila, P.; Jussila, H.; Aierken, A.; Sopanen, M; Lipsanen, H.2011 Low Energy Electron Beam Induced Damage on Gallium Nitride Based Structures
Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Homeyer, Estelle; Bellessa, Joel; Sopanen, Markku2011 Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content
Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri2011 in AIP Conference Proceedings (AMER INST PHYSICS)ISSN: 0094-243XTemperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes
Rangel-Kuoppa, Victor-Tapio; Knuutila, Lauri; Sopanen, Markku; Lipsanen, Harri; Avila, Alejandro2011 in AIP Conference Proceedings (AIP)ISSN: 0094-243XSynchrotron Radiation X-Ray Topography and X-Ray Diffraction Investigation of Low Dislocation Density GaN
Sintonen, Sakari; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Tuomi, Turkka; Paulmann, Carsten2011 MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations
Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O; Shirazi, R; Lipsanen, Harri; Sopanen, Markku; Kardynal, B E2011 Self-assembled InGaAs/GaAs quantum rings: Correlation of formation temperature and energy spectrum
Komkov, O.S.; Gordyushenkov, O.E.; Pikhtin, A.N.; Aierken, A.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2010 Growth and characterization of InAsN/InAs multi quantum well for infrared device applications
Subramaniyam, Nagarajan; Mattila, Päivi; Aierken, Abuduwayiti; Jussila, Henri; Sopanen, Markku; Lipsanen, Harri2010 Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation
Völk, Stefan; Schülein, Florian J.R.; Knall, Florian; Wixforth, Achim; Krenner, Hubert J.; Laucht, Arne; Finley, Jonathan J.; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri; He, Jun; Truong, Tuan A.; Kim, Hyouchul; Petroff, Pierre M.2010 in Proceedings of SPIE (SPIE)ISBN: 978-0-8194-8006-4ISSN: 0277-786XTemperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri2009 in AIP Conference Proceedings (AIP)ISBN: 9780735407367ISSN: 0094-243XModulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, M.; Sopanen, M.; Lipsanen, H.2005 in AIP Conference Proceedings (AIP)ISBN: 0735402574ISSN: 0094-243XGrowth parameter optimization for high nitrogen content Ga(In)NAs by MOVPE
Mattila, Marco; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri2004 Ga(In)NAs growth parameter optimization with low-pressure and atmospheric-pressure MOVPE systems
Reentilä, Outi; Mattila, Marco; Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2004 Applications of thin GaN layers in GaAs heterostuctures grown using DMHy
Sormunen, Jaakko; Riikonen, Juha; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2004 Misfit dislocations in GaAsN-GaAs interface
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Chen, W.; Lowney, D.2002 Transient processes on strain-induced quantum dots in high magnetic field.
Lomascolo, M.; Pomarico, A.; Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.2001 in SPRINGER PROCEEDINGS IN PHYSICS (SPRINGER VERLAG)ISBN: 3-540-41778-8ISSN: 0930-8989Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs
Sopanen, M.; Xin, H.P.; Tu, C.W.2000 High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Experimental determination of intra-lever relaxation time in quantum dots with different energy level spacing
Koskenvaara, H.; Sopanen, M.; Tulkki, J.; Lipsanen, H.; Braskén, M.; Lindberg, M.1999 Carrier relaxation in self-organized quantum dots: the effect of doping
Lipsanen, H.; Koskenvaara, H.; Toivonen, J.; Sopanen, M.; Ahopelto, J.1999 ISBN: 1-56677-245-1Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Grosse, S.; Feldman, J.; Karrai, K.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1999 Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Braskén, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.1999 Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs
Sopanen, M.; Xin, H.P.; Tu, C.W.1999 Tuning of energy levels in strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.1998 The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Tulkki, Jukka1998 in INSTITUTE OF PHYSICS CONFERENCE SERIES (IOP PUBLISHING LTD)ISBN: 0-7503-0611-4ISSN: 0951-3248Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.1998 in IEEE CONFERENCE PROCEEDINGS (IEEE)ISBN: 0-7803-4220-8ISSN: 1092-8669Photoluminescence study of passivated surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.1998 High magnetic field effects on the optical properties of InGaAs parabolic quantum dots
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.1998 THz-Near Infrared upconversion in strain-induced quantum dots
Yusa, G.; Allen, J.; Sakaki, H.; Kono, J.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.1998 Terahertz(THz)-Near Infrated(NIR) Upconversion in strain-induced quantum dots
Yusa, G.; Allen, S.J.; Sakaki, H.; Kono, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.1998 Strain-induced quantum dots: fabrication and optical properties
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.1997 Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriquez, E.; Messmer, Höfling; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.1997 Self-organized growth of InAs islands on (100) Si by metalorganic vapor phase epitaxy
Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Strain-induced quantum dot superlattice
Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.1997 Untersuchung der Relaxationsdynamik optisch generierter Ladungsträger in verspannungsinduzierten InGaAs Quantenpunkten
Grosse, S.; Sandmann, J.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Optical characterization of self-organized InGaAs/GaAs heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.1996 Optical characterisation of self organised InGaAs/InP heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, Harri; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 ISBN: 0-7803-3283-0Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs Quantum Dots
Sandmann, J.; Grosse, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic and Atomic Zeeman Effects in Quantum Well Dots Induced by Coherent InP Islands
Tulkki, J.; Lipsanen, H.; Sopanen, M.; Brasken, M.; Lindberg, M.; Ahopelto, J.; Rinaldi, R.; Giugno, P.; Cingolani, R.1996 Optical properties of self-organized InGaAs/InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.1995 ISBN: 0-7803-2147-2Self-organizing growth of InGaAs on nanoscale InP islands
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.1994 Self-organising growth of nanoscale heterostructures: Selective growth of InGaAs on InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Niemi, H.E.-M.1994 Formation of excess donors during (74)Ge(+) ion implantation
Xia, Z.; Ristolainen, Eränen; Ronkainen, H.; Suni, J.; Elliman, R.; Sopanen, M.; Holloway, P.1994 Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy
Hjelt, Kari T.; Sopanen, Markku A.; Lipsanen, Harri K.; Tuomi, Turkka O.; Hasenohrl, Stanisla1993 in MRS Proceedings (Materials Research Society MRS)ISBN: 1558991972ISSN: 0272-9172Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Liquid phase epitaxial growth of GaSb layers from Ga- and Sn-rich melts
Koljonen, T.; Sopanen, M.; Hjelt, K.; Lipsanen, H.; Tuomi, T.1993 Photoluminescence of GaSb wafers and LPE grown layers
Sopanen, M.; Hjelt, K.; Koljonen, T.; Lipsanen, H.; Koponen, M.; Tuomi, T.1993
Study Of 1/f Noise Characteristics In Cu/n-GaN Schottky Barrier Diode
Garg, Manjari; Kumar, Ashutosh; Subramaniyam, Nagarajan; Sopanen, M.; Singh, R.
2016 in AIP Conference Proceedings (AMER INST PHYSICS)ISBN: 978-0-7354-1378-8
ISSN: 0094-243X
Growth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars
Subramaniyam, Nagarajan; Svensk, Olli; Amit, P.; Shah, Ali; Rahman, Azizur; Maliakkal, Carina B.; Bhattacharya, Arnab; Lipsanen, Harri; Sopanen, Markku
2014 Structural study of crystal defects in thin GaP layers on (100) silicon substrates by X-ray diffraction
Jussila, Henri; Subramaniyam, Nagarajan; Sintonen, Sakari; Huhtio, Teppo; Tuomi, Turkka O.; Lipsanen, Harri; Sopanen, Markku
2012 Defect activation in MOVPE GaN under low energy electron beam irradiation
Nykänen, Henri; Suihkonen, Sami; Kilanski, Lucasz; Sopanen, Markku; Tuomisto, Filip
2012 Growth and Characterization of GaP Layers on Silicon Substrates by MOVPE
Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri
2011 Characteristics of InGaAs/GaAsN quantum dot solar cells.
Nagarajan, S.; Ali, M.; Mattila, P.; Jussila, H.; Aierken, A.; Sopanen, M; Lipsanen, H.
2011 Low Energy Electron Beam Induced Damage on Gallium Nitride Based Structures
Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Homeyer, Estelle; Bellessa, Joel; Sopanen, Markku
2011 Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content
Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri
2011 in AIP Conference Proceedings (AMER INST PHYSICS)ISSN: 0094-243X
Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes
Rangel-Kuoppa, Victor-Tapio; Knuutila, Lauri; Sopanen, Markku; Lipsanen, Harri; Avila, Alejandro
2011 in AIP Conference Proceedings (AIP)ISSN: 0094-243X
Synchrotron Radiation X-Ray Topography and X-Ray Diffraction Investigation of Low Dislocation Density GaN
Sintonen, Sakari; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Tuomi, Turkka; Paulmann, Carsten
2011 MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations
Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O; Shirazi, R; Lipsanen, Harri; Sopanen, Markku; Kardynal, B E
2011 Self-assembled InGaAs/GaAs quantum rings: Correlation of formation temperature and energy spectrum
Komkov, O.S.; Gordyushenkov, O.E.; Pikhtin, A.N.; Aierken, A.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
2010 Growth and characterization of InAsN/InAs multi quantum well for infrared device applications
Subramaniyam, Nagarajan; Mattila, Päivi; Aierken, Abuduwayiti; Jussila, Henri; Sopanen, Markku; Lipsanen, Harri
2010 Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation
Völk, Stefan; Schülein, Florian J.R.; Knall, Florian; Wixforth, Achim; Krenner, Hubert J.; Laucht, Arne; Finley, Jonathan J.; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri; He, Jun; Truong, Tuan A.; Kim, Hyouchul; Petroff, Pierre M.
2010 in Proceedings of SPIE (SPIE)ISBN: 978-0-8194-8006-4
ISSN: 0277-786X
Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes
Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri
2009 in AIP Conference Proceedings (AIP)ISBN: 9780735407367
ISSN: 0094-243X
Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, M.; Sopanen, M.; Lipsanen, H.
2005 in AIP Conference Proceedings (AIP)ISBN: 0735402574
ISSN: 0094-243X
Growth parameter optimization for high nitrogen content Ga(In)NAs by MOVPE
Mattila, Marco; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri
2004 Ga(In)NAs growth parameter optimization with low-pressure and atmospheric-pressure MOVPE systems
Reentilä, Outi; Mattila, Marco; Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2004 Applications of thin GaN layers in GaAs heterostuctures grown using DMHy
Sormunen, Jaakko; Riikonen, Juha; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2004 Misfit dislocations in GaAsN-GaAs interface
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Chen, W.; Lowney, D.
2002 Transient processes on strain-induced quantum dots in high magnetic field.
Lomascolo, M.; Pomarico, A.; Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.
2001 in SPRINGER PROCEEDINGS IN PHYSICS (SPRINGER VERLAG)ISBN: 3-540-41778-8
ISSN: 0930-8989
Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs
Sopanen, M.; Xin, H.P.; Tu, C.W.
2000 High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
2000 Experimental determination of intra-lever relaxation time in quantum dots with different energy level spacing
Koskenvaara, H.; Sopanen, M.; Tulkki, J.; Lipsanen, H.; Braskén, M.; Lindberg, M.
1999 Carrier relaxation in self-organized quantum dots: the effect of doping
Lipsanen, H.; Koskenvaara, H.; Toivonen, J.; Sopanen, M.; Ahopelto, J.
1999 ISBN: 1-56677-245-1
Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Grosse, S.; Feldman, J.; Karrai, K.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.
1999 Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Braskén, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.
1999 Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs
Sopanen, M.; Xin, H.P.; Tu, C.W.
1999 Tuning of energy levels in strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.
1998 The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Tulkki, Jukka
1998 in INSTITUTE OF PHYSICS CONFERENCE SERIES (IOP PUBLISHING LTD)ISBN: 0-7503-0611-4
ISSN: 0951-3248
Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.
1998 in IEEE CONFERENCE PROCEEDINGS (IEEE)ISBN: 0-7803-4220-8
ISSN: 1092-8669
Photoluminescence study of passivated surface quantum wells
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.
1998 High magnetic field effects on the optical properties of InGaAs parabolic quantum dots
Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.
1998 THz-Near Infrared upconversion in strain-induced quantum dots
Yusa, G.; Allen, J.; Sakaki, H.; Kono, J.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.
1998 Terahertz(THz)-Near Infrated(NIR) Upconversion in strain-induced quantum dots
Yusa, G.; Allen, S.J.; Sakaki, H.; Kono, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.
1998 Strain-induced quantum dots: fabrication and optical properties
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.
1997 Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriquez, E.; Messmer, Höfling; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.
1997 Self-organized growth of InAs islands on (100) Si by metalorganic vapor phase epitaxy
Lipsanen, H.; Sopanen, M.; Ahopelto, J.
1997 Strain-induced quantum dot superlattice
Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.
1997 Untersuchung der Relaxationsdynamik optisch generierter Ladungsträger in verspannungsinduzierten InGaAs Quantenpunkten
Grosse, S.; Sandmann, J.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.
1996 Optical characterization of self-organized InGaAs/GaAs heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.
1996 Optical characterisation of self organised InGaAs/InP heterodots
Guasch, C.; Ahopelto, J.; Lipsanen, Harri; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.
1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.
1996 ISBN: 0-7803-3283-0
Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs Quantum Dots
Sandmann, J.; Grosse, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.
1996 Mesoscopic and Atomic Zeeman Effects in Quantum Well Dots Induced by Coherent InP Islands
Tulkki, J.; Lipsanen, H.; Sopanen, M.; Brasken, M.; Lindberg, M.; Ahopelto, J.; Rinaldi, R.; Giugno, P.; Cingolani, R.
1996 Optical properties of self-organized InGaAs/InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.
1995 ISBN: 0-7803-2147-2
Self-organizing growth of InGaAs on nanoscale InP islands
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.
1994 Self-organising growth of nanoscale heterostructures: Selective growth of InGaAs on InP dots
Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Niemi, H.E.-M.
1994 Formation of excess donors during (74)Ge(+) ion implantation
Xia, Z.; Ristolainen, Eränen; Ronkainen, H.; Suni, J.; Elliman, R.; Sopanen, M.; Holloway, P.
1994 Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy
Hjelt, Kari T.; Sopanen, Markku A.; Lipsanen, Harri K.; Tuomi, Turkka O.; Hasenohrl, Stanisla
1993 in MRS Proceedings (Materials Research Society MRS)ISBN: 1558991972
ISSN: 0272-9172
Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.
1993 Liquid phase epitaxial growth of GaSb layers from Ga- and Sn-rich melts
Koljonen, T.; Sopanen, M.; Hjelt, K.; Lipsanen, H.; Tuomi, T.
1993 Photoluminescence of GaSb wafers and LPE grown layers
Sopanen, M.; Hjelt, K.; Koljonen, T.; Lipsanen, H.; Koponen, M.; Tuomi, T.
1993 Non-refereed scientific articles
Unrefereed journal articlesSubstrate-patterning techniques for nitride growth
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.2010 in SPIE Newsroom, Displays and Illumination (The Finnish Physical Society)
Substrate-patterning techniques for nitride growth
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.
2010 in SPIE Newsroom, Displays and Illumination (The Finnish Physical Society)Unrefereed conference proceedingsGrowth and characterization of III-nitride nanostructures
Subramaniyam, Nagarajan; Sopanen, Markku2014 Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer
Aierken, A.; Nagarajan, S.; Huhtio, T.; Sopanen, M.; Lipsanen, H.2011
Growth and characterization of III-nitride nanostructures
Subramaniyam, Nagarajan; Sopanen, Markku
2014 Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer
Aierken, A.; Nagarajan, S.; Huhtio, T.; Sopanen, M.; Lipsanen, H.
2011 Publications intended for professional communities
Article in professional journalValotehoa ledeistä, Pintaplasmoneilla kohti tehokkaampaa optoelektroniikkaa,
Mattila, P.; Nykänen, H.; Sopanen, M.; Suihkonen, S.; Svensk, O.2011 in Prosessori (The Finnish Physical Society)ISSN: 0357-4121Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
Tulkki, J.; Lipsanen, H.; Sopanen, M.2004 in Artec House (The Finnish Physical Society)
Valotehoa ledeistä, Pintaplasmoneilla kohti tehokkaampaa optoelektroniikkaa,
Mattila, P.; Nykänen, H.; Sopanen, M.; Suihkonen, S.; Svensk, O.
2011 in Prosessori (The Finnish Physical Society)ISSN: 0357-4121
Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires
Tulkki, J.; Lipsanen, H.; Sopanen, M.
2004 in Artec House (The Finnish Physical Society)Article in professional conference proceedingsProperties of GaAs nanowires grown on low-cost glass substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012 Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires
Haggren, Tuomas; Dhaka, Veer; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri2012
Properties of GaAs nanowires grown on low-cost glass substrates
Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri
2012 Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires
Haggren, Tuomas; Dhaka, Veer; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri
2012 Published development or research reportIn-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri2006 In-situ composition determination of MOVPE grown InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2006 Effect of growth conditions on electrocal properties of Mg-doped p-GaN
Svensk, Olli; Törmä, Pekka; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, M.A.; Bougrov, V.E.2006 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri2005 YOOPpia ikä kaikki
Alestalo, Pekka; Belitz, Sanna; Sopanen, Markku; Tuhkuri, Jukka; Virtanen, Satu2003 Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2002 In (Ga)As quantum dots on Ge substrate
Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.2002 Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.2002 Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Effect of growth conditions on the defect transitions in Ga(In)NAs
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2002 Growth and optical properties of GaInNAs quantum wells
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.2001 Growth and defects of GaAsN layers on GaAs
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.2001 Defects in GaInNAs quantum dot layers
Tuomi, Turkka; Pohjola, P.; Riikonen, J.; Knuuttila, L.; Sopanen, M.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.2001 High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.2000 Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.1997 Ultrafast relaxation dynamics in strain-induced quantum dots
Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.1997 Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.1996 Mesoscopic Zeeman effect in parabolic quantum dots
Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.1996 Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.1996 InGaAs quantum dots induced by self-organized InP stressors.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
Lipsanen, H.; Sopanen, M.1995 Recombination processes in strain-induced InGaAs quantum dots.
Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.1995 Optical properties of self-organized InGaAs/InP dots.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.1995 Fabrication, characterization and modelling of stain-induced quantum dots.
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.1995 Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.1995 Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1994 X-ray diffraction study of GaSb on GaAs grown by MOVPE
Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.1994 Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.1994 MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.1994 Metallo organic vapour phase epitaxy of III-V semiconductors
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.1994 MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.1994 Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation
Xia, Z.; Ristolainen, E.; Eränen, S.; Ronkainen, H.; Elliman, R.; Sopanen, M.; Tuomi, T.1994 The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.1993 Photoluminescence spectra of GaSb subtrates and layers
Hjelt, K.; Koljonen, T.; Sopanen, M.; Koponen, M.1993 Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.1993 Metallo-organic vapor phase system
Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.1993 Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy
Sopanen, M.; Koljonen, T.; Tuomi, T.1993 Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.1992 Liquid phase epitaxial (LPE) technique
Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.1992 Fabrication of InGaAsP/InP distributed feedback lasers
Sopanen, M.; Koljonen, T.; Tuomi, T.1992 Inhomogeneity of LPE-InGaAs layers grown by supercooling technique
Sopanen, M.; Tuomi, T.1992
In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases
Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri
2006 In-situ composition determination of MOVPE grown InGaAsN quantum wells
Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2006 Effect of growth conditions on electrocal properties of Mg-doped p-GaN
Svensk, Olli; Törmä, Pekka; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, M.A.; Bougrov, V.E.
2006 Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers
Mattila, Marco; Sopanen, Markku; Lipsanen, Harri
2005 YOOPpia ikä kaikki
Alestalo, Pekka; Belitz, Sanna; Sopanen, Markku; Tuhkuri, Jukka; Virtanen, Satu
2003 Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.
2002 Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.
2002 In (Ga)As quantum dots on Ge substrate
Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.
2002 Photoluminescence study of strain induced GaInNAs/GaAs quantum dots
Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.
2002 Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy
Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
2002 Effect of growth conditions on the defect transitions in Ga(In)NAs
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
2002 Growth and optical properties of GaInNAs quantum wells
Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.
2001 Growth and defects of GaAsN layers on GaAs
Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.
2001 Defects in GaInNAs quantum dot layers
Tuomi, Turkka; Pohjola, P.; Riikonen, J.; Knuuttila, L.; Sopanen, M.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.
2001 High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy
Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.
2000 Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots
Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.
1997 Ultrafast relaxation dynamics in strain-induced quantum dots
Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.
1997 Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots
Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.
1996 Enhanced luminescence of near-surface quantum wells passivated in situ by InP
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.
1996 In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells
Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.
1996 Mesoscopic Zeeman effect in parabolic quantum dots
Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.
1996 Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors
Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.
1996 InGaAs quantum dots induced by self-organized InP stressors.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.
1995 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.
Lipsanen, H.; Sopanen, M.
1995 Recombination processes in strain-induced InGaAs quantum dots.
Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.
1995 Optical properties of self-organized InGaAs/InP dots.
Lipsanen, H.; Ahopelto, J.; Sopanen, M.
1995 Fabrication, characterization and modelling of stain-induced quantum dots.
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.
1995 Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.
Sopanen, M.; Lipsanen, H.; Ahopelto, J.
1995 Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources
Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.
1994 X-ray diffraction study of GaSb on GaAs grown by MOVPE
Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.
1994 Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.
1994 MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source
Sopanen, M.; Koljonen, T.; Lipsanen, H.
1994 Metallo organic vapour phase epitaxy of III-V semiconductors
Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.
1994 MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources
Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.
1994 Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation
Xia, Z.; Ristolainen, E.; Eränen, S.; Ronkainen, H.; Elliman, R.; Sopanen, M.; Tuomi, T.
1994 The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.
1993 Photoluminescence spectra of GaSb subtrates and layers
Hjelt, K.; Koljonen, T.; Sopanen, M.; Koponen, M.
1993 Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy
Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.
1993 Metallo-organic vapor phase system
Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.
1993 Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy
Sopanen, M.; Koljonen, T.; Tuomi, T.
1993 Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2
Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.
1992 Liquid phase epitaxial (LPE) technique
Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.
1992 Fabrication of InGaAsP/InP distributed feedback lasers
Sopanen, M.; Koljonen, T.; Tuomi, T.
1992 Inhomogeneity of LPE-InGaAs layers grown by supercooling technique
Sopanen, M.; Tuomi, T.
1992 Videos
Markku Sopanen: “Optoelectronics: from materials physics and nanosciences to consumer applications”
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