Filip Tuomisto

Peer-reviewed scientific articles

Journal article-refereed, Original research

Charge compensation mechanisms in U_1-xGd_xO₂ and Th_1-xGd_xO_2-x/2 studied by X-ray Absorption Spectroscopy

Bes, Rene; Pakarinen, Janne; Baena, Angela; Conradson, Steven; Verwerft, Marc; Tuomisto, Filip

2017 in JOURNAL OF NUCLEAR MATERIALS (Elsevier Science B.V.)

ISSN: 0022-3115

Positron annihilation analysis of the atomic scale changes in oxidized Zircaloy-4 samples

Heikinheimo, J.; Ortner, S.; Makkonen, I.; Kujala, J.; Blackmur, M.; Tuomisto, F.

2017 in JOURNAL OF NUCLEAR MATERIALS (Elsevier Science B.V.)

ISSN: 0022-3115

Detector resolution in positron annihilation Doppler broadening experiments

Heikinheimo, J.; Ala-Heikkilä, J.; Tuomisto, F.

2017 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)

ISSN: 0168-9002

Formation of Zn- and O- vacancy clusters in ZnO through deuterium annealing

Johansen, K. M.; Tuomisto, F.; Makkonen, I.; Vines, L.

2017 in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (Elsevier Limited)

ISSN: 1369-8001

Effects of grain size and deformation temperature on hydrogen-enhanced vacancy formation in Ni alloys

Lawrence, Samantha K.; Yagodzinskyy, Yuriy; Hänninen, Hannu; Korhonen, Esa; Tuomisto, Filip; Harris, Zachary D.; Somerday, Brian P.

2017 in ACTA MATERIALIA (PERGAMON-ELSEVIER SCIENCE LTD)

ISSN: 1359-6454

Radiation-induced alloy rearrangement in In_xGa_{1− x}N

Prozheeva, V.; Makkonen, I.; Cuscó, R.; Artús, L.; Dadgar, A.; Plazaola, F.; Tuomisto, F.

2017 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Subsurface damage in polishing-annealing processed ZnO substrates

Prozheeva, V.; Johansen, K. M.; Neuvonen, P. T.; Zubiaga, A.; Vines, L.; Kuznetzov, A. Yu; Tuomisto, F.

2017 in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (Elsevier Limited)

ISSN: 1369-8001

Evaluation of the concentration of point defects in GaN

Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu N.; Prozheeva, V.; Makkonen, I.; Tuomisto, F.; Leach, J. H.; Udwary, K.

2017 in SCIENTIFIC REPORTS (NATURE PUBLISHING GROUP)

ISSN: 2045-2322

Hole density and acceptor-type defects in MBE-grown GaSb_1-x Bi_x

Segercrantz, N.; Slotte, J.; Makkonen, I.; Tuomisto, F.; Sandall, I. C.; Ashwin, M.J.; Veal, T.D.

2017 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Instability of the Sb vacancy in GaSb

Segercrantz, N.; Slotte, J.; Tuomisto, F.; Mizohata, K.; Raisanen, J.

2017 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen, Sami; Pimputkar, Siddha; Sintonen, Sakari; Tuomisto, Filip

2017 in Advanced Electronic Materials (Wiley)

ISSN: 2199-160X

GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Cordier, Yvon; Damilano, Benjamin; Aing, Phannara; Chaix, Catherine; Linez, Florence; Tuomisto, Filip; Vennegues, Philippe; Frayssinet, Eric; Lefebvre, Denis; Portail, Marc; Nemoz, Maud

2016 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Understanding and control of bipolar self-doping in copper nitride

Fioretti, Angela N.; Schwartz, Craig P.; Vinson, John; Nordlund, Dennis; Prendergast, David; Tamboli, Adele C.; Caskey, Christopher M.; Tuomisto, Filip; Linez, Florence; Christensen, Steven T.; Toberer, Eric S.; Lany, Stephan; Zakutayev, Andriy

2016 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Monte Carlo analysis of germanium detector performance in slow positron beam experiments

Heikinheimo, J.; Tuominen, R.; Tuomisto, F.

2016 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

Kalliovaara, T.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Milazzo, R.; Impellizzeri, G.; Fortunato, G.; Napolitani, E.

2016 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb

Kujala, Jiri; Südkamp, T.; Slotte, J.; Makkonen, I.; Tuomisto, F.; Bracht, H.

2016 in JOURNAL OF PHYSICS: CONDENSED MATTER (IOP PUBLISHING LTD)

ISSN: 0953-8984

Si nanocrystals and nanocrystal interfaces studied by positron annihilation

Kujala, J.; Slotte, J.; Tuomisto, F.; Hiller, D.; Zacharias, M.

2016 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

Latkowska, M.; Baranowski, M.; Linhart, W. M.; Janiaka, F.; Misiewicz, J.; Segercrantz, N.; Tuomisto, F.; Zhuang, Q.; Krier, A.; Kudrawiec, R.

2016 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally

Linez, F.; Makkonen, I.; Tuomisto, F.

2016 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In₂O₃ and SnO₂

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016 in JOURNAL OF PHYSICS: CONDENSED MATTER (IOP PUBLISHING LTD)

ISSN: 0953-8984

Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductors

Slotte, J.; Makkonen, I.; Tuomisto, F.

2016 in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (ELECTROCHEMICAL SOC INC)

ISSN: 2162-8769

Modeling positronium beyond the single particle approximation

Zubiaga, A.; Ervasti, M. M.; Makkonen, I.; Harju, A.; Tuomisto, F.; Puska, M. J.

2016 in JOURNAL OF PHYSICS B: ATOMIC MOLECULAR AND OPTICAL PHYSICS (IOP Publishing Ltd.)

ISSN: 0953-4075

Role of excessive vacancies in transgranular stress corrosion cracking of pure copper

Aaltonen, Pertti; Yagodzinskyy, Yuriy; Saukkonen, Tapio; Kilpeläinen, Simo; Tuomisto, Filip; Hänninen, Hannu

2015 in CORROSION REVIEWS (Freund Publishing House Ltd)

ISSN: 0334-6005

Electrical compensation by Ga vacancies in Ga₂O₃

Korhonen, Esa; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

2015 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)

ISSN: 0003-6951

Cation vacancies and electrical compensation in Sb-doped thin-film SnO₂ and ZnO

Korhonen, Esa; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J.S.; White, M.E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Özgür, U.; Morkoç, H.

2015 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)

ISSN: 0268-1242

Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C₆₀

Marchiori, C.F.N.; Yamamoto, N.A.D.; Matos, C.F.; Kujala, Jiri; Macedo, A.G.; Tuomisto, F.; Zarbin, A.J.G.; Koehler, M.; Roman, L.S.

2015 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects

Segercrantz, N.; Makkonen, I.; Slotte, J.; Kujala, J.; Veal, T. D.; Ashwin, M. J.; Tuomisto, F.

2015 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Advanced techniques for characterization of ion beam modified materials

Zhang, Y.; Debelle, A.; Boulle, A.; Kluth, P.; Tuomisto, Filip

2015 in CURRENT OPINION IN SOLID STATE AND MATERIALS SCIENCE (Elsevier Limited)

ISSN: 1359-0286

Pick-off Annihilation of Positronium in Matter Using Full Correlation Single Particle Potentials: Solid He

Zubiaga, A.; Tuomisto, F.; Puska, Martti J.

2015 in Journal of Physical Chemistry B (AMER CHEMICAL SOC)

ISSN: 1520-6106

Growth, characterization and study of ferromagnetism of bismuth telluride doped with manganese

Fedorchenko, I.V.; Marenkin, S.F.; Avdonin, A.; Domukhovski, V.; Dobrowolski, W.; Heikinheimo, J.; Korhonen, E.; Tuomisto, F.

2014 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

Jussila, H.; Yu, K.M.; Kujala, J.; Tuomisto, F.; Subramaniyam, Nagarajan; Lemettinen, J.; Huhtio, T.; Tuomi, T.O.; Lipsanen, H.; Sopanen, M.

2014 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Point defects and p-type conductivity in Zn_1-xMn_xGeAs₂

Kilanski, L.; Rauch, C.; Tuomisto, F.; Podgórni, A.; Dynowska, E.; Dobrowolski, W.; Fedorchenko, I.V.; Marenkin, S.F.

2014 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Compensating vacancy defects in Sn- and Mg-doped In₂O₃

Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J.S.; Galazka, Z.

2014 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Vacancy defects in UV-transparent HVPE-AlN

Kuittinen, T.; Tuomisto, F.; Kumagai, Y.; Nagashima, T.; Kinoshita, T.; Koukitu, A.; Collazo, R.; Sitar, Z.

2014 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Native point defects in GaSb

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J.

2014 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

He implantation induced defects in InN

Linez, F.; Ritt, M.; Rauch, C.; Kilanski, L.; Choi, S.; Speck, J.S.; Räisänen, J.; Tuomisto, F.

2014 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO₂/Si_1-xGe_x/SiO₂/(100)Si structures with nm-thi

Madia, O.; Nguyen, A.P.D.; Thoan, N.H.; "Afanas'ev", V.; Stesmans, A.; Souriau, L.; Slotte, J.; Tuomisto, F.

2014 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Charge transition level of GeP_b1 centers at interfaces of SiO₂/Ge_xSi_1-x/SiO₂ heterostructures investigated by positron annihilation spectroscopy

Madia, O.; Segercrantz, N.; Afanasjev, V.; Stesmans, A.; Souriau, L.; Slotte, J.; Tuomisto, F.

2014 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Vacancy defect formation in PA-MBE grown C-doped InN

Prozheeva, V.; Tuomisto, F.; Koblmüller, G.; Speck, J.S.; Knübel, A.; Aidam, R.

2014 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Optical Identification of Oxygen Vacancy Formation at SrTiO₃ - (Ba,Sr)TiO₃ Heterostructures

Rutkowski, M.; McNicholas, K.; Zeng, Z.; Tuomisto, F.; Brillson, L.

2014 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Point defect balance in epitaxial GaSb

Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

2014 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

Särkijärvi, Suvi; Sintonen, Sakari; Tuomisto, Filip; Bosund, Markus; Suihkonen, Sami; Lipsanen, Harri

2014 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

On the sensitivity of positron annihilation signals to alloy homogeneity in In_xGa_1-xN

Tuomisto, F.; Norrman, V.; Makkonen, I.

2014 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

Vacancy-hydrogen complexes in ammonothermal GaN

Tuomisto, F.; Kuittinen, T.; Zajac, M.; Doradzinski, R.; Wasik, D.

2014 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Full-correlation single-particle positron potentials for a positron and positronium interacting with atoms

Zubiaga, A.; Tuomisto, F.; Puska, M.

2014 in PHYSICAL REVIEW A (AMER PHYSICAL SOC)

ISSN: 1050-2947

Interplay of dopants and native point defects in ZnO

Brillson, L.J.; Zhang, Z.; Doutt, D.R.; Look, D.C.; Svensson, B.G.; Kuznetsov, A.Yu.; Tuomisto, F.

2013 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Enhanced light extraction from InGaN/GaN quantum wells with silver gratings

Homeyer, Estelle; Mattila, Päivi; Oksanen, Jani; Sadi, Toufik; Nykänen, Henri; Suihkonen, Sami; Symonds, Clementine; Tulkki, Jukka; Tuomisto, Filip; Sopanen, Markku; Bellessa, Joel

2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Si nanoparticle interfaces in Si/SiO₂ solar cell materials

Kilpeläinen, S.; Kujala, J.; Tuomisto, F.; Slotte, J.; Lu, Y.-W.; Nylandsted Larsen, A.

2013 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Migration kinetics of ion-implanted beryllium in ZnO and GaN

Koskelo, Otso; Köster, Ulli; Tuomisto, Filip; Helariutta, Kerttuli; Sopanen, Markku; Suihkonen, Sami; Svensk, Olli; Räisänen, Jyrki

2013 in PHYSICA SCRIPTA (IOP Publishing Ltd.)

ISSN: 0031-8949

Acceptors in undoped GaSb; the role of vacancy defects

Kujala, Jiri; Slotte, J.; Tuomisto, F.

2013 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by MetalOrganic Vapor Phase Epitaxy in H2 and N2 Ambients

Nykänen, Henri; Suihkonen, Sami; Svensk, Olli; Sopanen, Markku; Tuomisto, Filip

2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Band-edge luminescence degradation by low energy electron beam irradiation in GaN grown by metal-organic vapor phase epitaxy in H2 and N 2 ambients

Nykänen, Henri; Suihkonen, Sami; Svensk, Olli; Sopanen, Markku; Tuomisto, Filip

2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN

Nykänen, Henri; Suihkonen, Sami; Sopanen, Markku; Tuomisto, Filip

2013 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Defect identification in semiconductors with positron annihilation: Experiment and theory

Tuomisto, F.; Makkonen, I.

2013 in Reviews of Modern Physics (American Physical Society)

ISSN: 0034-6861

Nitrogen and vacancy clusters in ZnO

Tuomisto, F.; Rauch, C.; Wagner, M.R.; Hoffmann, A.; Eisermann, S.; Meyer, B.K.; Kilanski, L.; Tarun, M.C.; McCluskey, M.D.

2013 in JOURNAL OF MATERIALS RESEARCH (MATERIALS RESEARCH SOCIETY)

ISSN: 0884-2914

Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Virkkala, Ville; Havu, Ville; Tuomisto, Filip; Puska, Martti J.

2013 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Origin of band gap bowing in dilute GaAs_1-xN_x and GaP_1-xN_x alloys: a real-space view

Virkkala, V.; Havu, V.; Tuomisto, F.; Puska, M.J.

2013 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Study of unbound HePs using Exact Diagonalization technique

Zubiaga, A.; Tuomisto, F.; Puska, M.J.

2013 in Materials Science Forum (Trans Tech Publications)

ISSN: 0255-5476

On the interplay of point defects and Cd in non-polar ZnCdO films

Zubiaga, A.; Reurings, F.; Tuomisto, F.; Plazaola, F.; Garcia, J.A.; Kuznetsov, A.Yu.; Egger, W.; Zuniga-Perez, J.; Munoz-Sanjose, V.

2013 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Exchange and correlation effects in the strongly interacting He-Ps system

Zubiaga, A.; Tuomisto, F.; Puska, M.J.

2013 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

Native point defects at ZnO surfaces, interfaces and bulk films

Brillson, L.J.; Dong, Y.; Tuomisto, F.; Svensson, B.G.; Kuznetsov, A.Yu.; Doutt, D.; Mosbacker, H.L.; Cantwell, G.; Zhang, J.; Song, J.J.; Fang, Z.-Q.; Look, D.C.

2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Magnetically active vacancy related defects in irradiated GaN layers

Kilanski, L.; Tuomisto, F.; Szymczak, R.; Kruszka, R.

2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

Knutsen, K.E.; Galeckas, A.; Zubiaga, A.; Tuomisto, F.; Farlow, G.C.; Svensson, B.G.; Kuznetsov, A.Yu.

2012 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Vacancy defects in epitaxial thin film CuGaSe₂ and CuInSe₂

Korhonen, Esa; Kuitunen, K.; Tuomisto, F.; Urbaniak, A.; Igalson, M.; Larsen, J.; Gütay, L.; Siebentritt, S.

2012 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Chemical analysis using coincidence Doppler broadening and supporting first-principles theory: applications to vacancy defects in compound semiconductors

Makkonen, Ilja; Rauch, C.; Mäki, J.-M.; Tuomisto, F.

2012 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)

ISSN: 0921-4526

Positron lifetime spectroscopy with optical excitation: case study of natural diamond

Mäki, J.-M.; Kuittinen, T.; Korhonen, E.; Tuomisto, F.

2012 in NEW JOURNAL OF PHYSICS (IOP PUBLISHING LTD)

Low energy electron beam induced vacancy activation in GaN

Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukasz; Sopanen, Markku; Tuomisto, Filip

2012 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)

ISSN: 0003-6951

Ga-vacancy activation under low energy electron irradiation in GaN-based materials

Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukaz; Sopanen, Markku; Tuomisto, Filip

2012 in MRS Online Proceedings (AMER INST PHYSICS)

ISSN: 1946-4274

Study of Defects Generated by Standard- and Plasma- Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

Ottaviani, L.; Kazan, M.; Biondo, S.; Tuomisto, F.; Milesi, F.; Duchaine, J.; Torregrosa, F.; Palais, O.

2012 in Materials Science Forum (Trans Tech Publications)

ISSN: 0255-5476

Tailoring the Chain Packing in Ultrathin Polyelectrolyte Films Formed by Sequential Adsorption: Nanoscale Probing by Positron Annihilation Spectroscopy

Quinn, J.F.; Pas, S.J.; Quinn, A.; Yap, H.P.; Suzuki, R.; Tuomisto, F.; Shekibi, B.S.; Mardel, J.I.; Hill, A.J.; Caruso, F.

2012 in Journal of the American Chemical Society (American Chemical Society ACS)

ISSN: 0002-7863

Point defect evolution in low-temperature MOCVD growth of InN

Rauch, Christian; Öcal, T.; Giesen, C.; Heuken, M.; Tuomisto, F.

2012 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Defect evolution and interplay in n-type InN

Rauch, C.; Tuomisto, F.; Vilalta-Clemente, A.; Lacroix, B.; Ruterana, P.; Kraeusel, S.; Hourahine, B.; Schaff, W.J.

2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Self-compensation in highly n-type InN

Rauch, C.; Tuomisto, F.; King, P.D.C.; Veal, T.D.; Lu, H.; Schaff, W.J.

2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

On the formation of vacancy defects in III-nitride semiconductors

Tuomisto, F.; Mäki, J.-M.; Rauch, C.; Makkonen, I.

2012 in Journal of crystal growth (Elsevier)

Non-destructive examination of helium implanted HTRs construction materials

Veternikova, J.; Degmova, J.; Kilpeläinen, S.; Slugen, V.; Tuomisto, F.; Räisänen, J.; Krsjak, V.; Petriska, M.; Sojak, S.; Hinca, R.; Stacho, M.

2012 in NUCLEAR ENGINEERING AND DESIGN (Elsevier Science)

Native Point Defect Energetics in GaSb: enabling p-type conductivity of undoped GaSb

Virkkala, V.; Havu, V.; Tuomisto, F.; Puska, M.J.

2012 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Hybrid functional study of band structures of GaAs_1-xN_x and GaSb_1-xN_x Alloys

Virkkala, V.; Havu, V.; Tuomisto, F.; Puska, M.J.

2012 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Matter-positronium interaction: An exact diagonalization study of the He atom - positronium system

Zubiaga, A.; Tuomisto, F.; Puska, M.J.

2012 in PHYSICAL REVIEW A (AMER PHYSICAL SOC)

ISSN: 1050-2947

Positron and luminescence lifetimes in annealed synthetic quartz

Chithambo, M.L.; Sane, P.; Tuomisto, F.

2011 in RADIATION MEASUREMENTS (Elsevier Limited)

ISSN: 1350-4487

Identification of substitutional Li in n-type ZnO and its role as an acceptor

Johansen, K.M.; Zubiaga, A.; Makkonen, I.; Tuomisto, F.; Neuvonen, P.T.; Knutsen, K.E.; Monakhov, E.V.; Kuznetsov, A.Y.; Svensson, B.G.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry

Johansen, K.M.; Zubiaga, A.; Tuomisto, F.; Monakhov, E.V.; Kuznetsov, A.Yu.; Svensson, B.G.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Evolution of E-centers during the annealing of Sb-doped Si_0.8Ge_0.2

Kilpeläinen, S.; Tuomisto, F.; Slotte, J.; Lundsgaard Hansen, J.; Nylandsted Larsen, A.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO

Look, D.C.; Leedy, K.D.; Vines, L.; Svensson, B.G.; Zubiaga, A.; Tuomisto, F.; Doutt, D.; Brillson, L.J.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Identification of the VAl-ON defect complex in AlN single crystals

Mäki, J.-M.; Makkonen, I.; Tuomisto, F.; Karjalainen, A.; Suihkonen, S.; Räisänen, J.; Chemekova, T.Yu.; Makarov, Yu.N.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Time dependence of charge transfer processes in diamond studied with positrons

Mäki, J.-M.; Tuomisto, F.; Varpula, Matti; Fisher, D.; Khan, R.U.A.; Martineau, P.M.

2011 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)

ISSN: 0031-9007

Defect evolution and impurity migration in Na implanted ZnO

Neuvonen, P.T.; Vines, L.; Venkatachalapathy, V.; Zubiaga, A.; Tuomisto, F.; Hallén, A.; Svensson, B.G.; Kuznetsov, A.Yu

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Towards Experimental Identification of Vacancy Complexes in InN

Rauch, C.; Makkonen, I.; Tuomisto, F.

2011 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: a case study of InN

Rauch, C.; Makkonen, I.; Tuomisto, F.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Tracking defect-induced ferromagnetism in GaN:Gd

Roever, M.; Malindretos, J.; Bedoya-Pinto, A.; Rizzi, A.; Rauch, C.; Tuomisto, F.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Void volume variations in contact lens polymers

Sane, P.; Tuomisto, F.; Holopainen, J.M.

2011 in CONTACT LENS AND ANTERIOR EYE (Elsevier)

ISSN: 1367-0484

Direct observations of the vacancy and its annealing in germanium

Slotte, J.; Kilpeläinen, S.; Tuomisto, F.; Räisänen, J.; Nylansted Larsen, A.

2011 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Vacancy defects in III-nitrides: what does positron annihilation spectroscopy reveal?

Tuomisto, Filip

2011 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

Vacancy defect and defect cluster energetics in ion-implanted ZnO

Dong, Yufeng; Tuomisto, Filip; Svensson, B.G.; Kuznetsov, A.Yu.; Brillson, Leonard J.

2010 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P

Kilpeläinen, S.; Kuitunen, K.; Tuomisto, F.; Slotte, J.; Radamson, H.H.; Kuznetsov, A.Yu.

2010 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature

Koblmüller, G.; Reurings, Floris; Tuomisto, Filip; Speck, J.S.

2010 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Diffusion of cobalt in ion-implanted ZnO

Koskelo, Otso; Räisänen, Jyrki; Eversheim, D.; Tuomisto, Filip; Grasza, K.; Mycielski, A.

2010 in THIN SOLID FILMS (Elsevier Science)

Positrons as interface-sensitive probes of polar semiconductor heterostructures

Makkonen, I.; Snicker, A.; Puska, M.J.; Mäki, J.-M.; Tuomisto, F.

2010 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

In-vacancies in Si-doped InN

Rauch, Christian; Reurings, Floris; Tuomisto, Filip; Veal, Tim; McConville, Chris F.; Lu, Hai; Schaff, William J.; Gallinat, Chad S.; Koblmüller, Gregor; Speck, James S; Egger, W.; Löwe, B.; Ravelli, L.; Sojak, S.

2010 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Defect redistribution in post-irradiation rapid-thermal-annealed InN

Reurings, Floris; Rauch, Christian; Tuomisto, Filip; Jones, Rebecca E.; Yu, Kin M.; Walukiewicz, Wladek; Schaff, William J.

2010 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

In vacancies in InN grown by plasma-assisted molecular beam epitaxy

Reurings, Floris; Tuomisto, Filip; Gallinat, Chad S.; Koblmüller, Gregor; Speck, James S.

2010 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)

ISSN: 0003-6951

Irradiation-induced defects in InN and GaN studied with positron annihilation

Reurings, Floris; Tuomisto, Filip; Egger, Werner; Löwe, Benjamin; Ravelli, Luca; Sojak, Sstanislav; Liliental-Weber, Zuzanna; Jones, Rebecca E.; Yu, Kin M.; Walukiewicz, Wladek; Schaff, William J.

2010 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Temperature-induced Structural Transition in-situ in Porcine Lens - Changes Observed in Void Size Distribution

Sane, Petri; Tuomisto, Filip; Wiedmer, Susanne K.; Nyman, Tuula; Vattulainen, Ilpo; Holopainen, Juha M.

2010 in BIOCHIMICA ET BIOPHYSICA ACTA: BIOMEMBRANES (Elsevier)

ISSN: 0005-2736

Revealing the Microstructural Changes in Tissues In-Situ with Positron Annihilation Spectroscopy

Sane, Petri; Tuomisto, Filip; Vattulainen, Ilpo; Holopainen, Juha

2010 in BIOPHYSICAL JOURNAL (CELL PRESS)

ISSN: 0006-3495

Divacancies at room temperature in germanium

Slotte, Jonatan; Kuitunen, Katja; Kilpeläinen, Seppo H.; Tuomisto, Filip; Capan, Ivana

2010 in THIN SOLID FILMS (Elsevier Science)

ISSN: 0040-6090

Vacancy defects in bulk ammonothermal GaN crystals

Tuomisto, Filip; Mäki, Jussi-Matti; Zajac, M.

2010 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Papers presented at the 2009 E-MRS Fall Meeting, Symposium H Bulk Amorphous and Nanocrystalline Materials Warsaw, Poland, 14-18 September 2009 Preface

Tuomisto, Filip

2010 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Defect studies with positrons: what could we learn on III-nitride heterostructures?

Tuomisto, Filip; Mäki, Jussi-Matti; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku

2010 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Zubiaga, Asier; Tuomisto, Filip; Kuznetsov, Andrej Yu

2010 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Comparison of T91 and P91 steels forseen for high temperature reactor using positron annihilation techniques

Veternikova, Jana; Slugen, Vladimir; Degmova, Jarmila; Hinca, R.; Sojak, Stanislav; Kilpeläinen, Simo; Tuomisto, Filip; Räisänen, J.; Krsjak, V.

2010 in European Nuclear Conference 2010 Transactions, European Nuclear Society (AIP Publishing)

Effect of Hydrogen on Plastic Strain Localization in Single Crystals of Austenitic Stainless Steel

Yagodzinskyy, Yuriy; Saukkonen, Tapio; Kilpeläinen, Simo; Tuomisto, Filip; Hänninen, Hannu

2010 in SCRIPTA MATERIALIA (Elsevier Limited)

ISSN: 1359-6462

Effect of carbon on vacancy defect concentration in model iron alloys

Biniukova, S.Yu.; Ganchenkova, Maria; Kilpeläinen, S.; Tuomisto, Filip; Chernov, I.I.

2009 in Perspektivnyje materialy (Elsevier Limited)

Native vacancy defects in Zn1-x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

Kilanski, L.; Zubiaga, A.; Tuomisto, F.; Dobrowolski, W.; Domukhovski, V.; Varnavskiy, S.; Marenkin, S.F.

2009 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Vacancy Engineering by He Induced Nanovoids in Crystalline Si

Kilpeläinen, Simo; Kuitunen, Katja; Tuomisto, Filip; Slotte, Jonatan; Bruno, E.; Mirabella, S.; Priolo, F.

2009 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)

He Implantation Induced Nanovoids in Crystalline Si

Kilpeläinen, Simo; Kuitunen, Kimmo; Slotte, Jonatan; Tuomisto, Filip; Bruno, E.; Mirabella, S.; Priolo, F.

2009 in JOURNAL OF MATERIALS SCIENCE AND ENGINEERING B (IOP Publishing Ltd.)

ISSN: 2161-6221

Defect characterization of heavily As and P doped Si epilayers

Kilpeläinen, Simo; Kuitunen, Katja; Slotte, Jonatan; Tuomisto, Filip; Borot, Gaël; Rubaldo, Laurent; Clément, L.; Pantel, Roland; Dutartre, Didier

2009 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

The effect of a material growth technique on ion implanted Mn diffusion in GaAs

Koskelo, Otso; Räisänen, Jyrki; Tuomisto, Filip; Sadowski, Janusz

2009 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)

Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers

Mäki, Jussi-Matti; Tuomisto, Filip; Bastek, Barbara; Bertram, Frank; Christen, Jürgen; Dadgar, Armin; Krost, Alois

2009 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Properties of optically active vacancy clusters in type IIa diamond

Mäki, Jussi-Matti; Tuomisto, Filip; Kelly, C.J.; Fisher, D.; Martineau, P.M.

2009 in JOURNAL OF PHYSICS: CONDENSED MATTER (IOP PUBLISHING LTD)

Interaction Between Na and Li in ZnO

Neuvonen, Pekka T.; Vines, Lasse; Kuznetsov, Andrej Yu; Svensson, Bengt G.; Du, Xiaolong; Tuomisto, Filip; Hallén, Anders

2009 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Order-disorder transitions in self-assembled polymers: A positron annihilation study

Ramani, Ramasubbu; Valkama, Sami; Kilpeläinen, Simo; Tuomisto, Filip; ten Brinke, Gerrit; Ruokolainen, Janne; Alam, Sarfaraz; Ikkala, Olli

2009 in Physica Status Solidi (c) (AMERICAN INSTITUTE OF PHYSICS)

Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions

Reurings, Floris; Tuomisto, Filip; Koblmüller, Gregor; Gallinat, Chad S.; Speck, James S.

2009 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Probing biomembranes with positrons

Sane, Petri; Salonen, Emppu; Falck, Emma; Repakova, Jarmila; Tuomisto, Filip; Holopainen, Juha; Vattulainen, Ilpo

2009 in Journal of Physical Chemistry B (AMER CHEMICAL SOC)

ISSN: 1520-6106

Probing The Microstructure Of Biomaterials With Positrons

Sane, Petri; Tuomisto, Filip; Vattulainen, Ilpo; Salonen, Emppu; Holopainen, Juha M.

2009 in BIOPHYSICAL JOURNAL (CELL PRESS)

4-channel digital positron lifetime spectrometer for studying biological samples

Sane, Petri; Kilpeläinen, Simo; Tuomisto, Filip

2009 in Materials Science Forum (Trans Tech Publications)

ISSN: 0255-5476

He implantation to control B diffusion in crystalline and preamorphized Si

Bruno, Elena; Mirabella, Salvo; Priolo, Francesco; Kuitunen, Katja; Tuomisto, Filip; Slotte, Jonatan; Giannazzo, Filippo; Bongiorno, Corrado; Raineri, Vito; Napolitani, Enrico

2008 in Journal of Vacuum Science and Technology. Part B. (AMER INST PHYSICS)

ISSN: 1071-1023

E center annealing in SiGe: stability and charge states

Kuitunen, Katja; Kilpeläinen, Simo; Slotte, Jonatan; Tuomisto, Filip

2008 in JOURNAL OF MATERIALS SCIENCE AND ENGINEERING B (AMER INST PHYSICS)

ISSN: 2161-6221

Divacancy clustering in neutron-irradiated and annealed n-type germanium

Kuitunen, Katja; Tuomisto, Filip; Slotte, Jonatan; Capan, Ivana

2008 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

Moe Børseth, T.; Tuomisto, Filip; Christensen, J.S.; Monakhov, E.V.; Svensson, B.G.; Kuznetsov, A.Yu.

2008 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Implantation Defects and n-type Doping in Ge and Ge rich SiGe

Peaker, A.R.; Markevich, V.P.; Hamilton, B.; Hawkins, I.D.; Slotte, J.; Kuitunen, K.; Tuomisto, F.; Satta, A.; Simoen, E.; Abrosimov, N.

2008 in THIN SOLID FILMS (Elsevier Science)

Evidence of PPII-like helical conformation and glass transition in a self-assembled solid-state polypeptide-surfactant complex: Poly(L-histidine)/Dodecylbenzenesulfonic acid

Ramani, Ramasubbu; Hanski, Sirkku; Laiho, Ari; Tuma, Roman; Kilpeläinen, Simo; Tuomisto, Filip; Ruokolainen, Janne; Ikkala, Olli

2008 in BIOMACROMOLECULES (AMER CHEMICAL SOC)

ISSN: 1525-7797

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Slotte, J.; Rummukainen, M.; Tuomisto, F.; Markevich, V.P.; Peaker, A.R.; Jeynes, C.; William, R.

2008 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Hydrothermally grown single-crystalline zinc oxide; characterization and modification

Svensson, B.G.; Moe Børseth, T.; Johansen, K.M.; Maqsood, T.; Schifano, R.; Grossner, U.; Christensen, J.S.; Vines, L.; Klason, P.; Zhao, Q.X.; Willander, M.; Tuomisto, F.; Skorupa, W.; Monakhov, E.V.; Kuznetsov, A.Yu.

2008 in Materials Research Society Symposium Proceedings (Materials Research Society)

Characterization of bulk AlN crystals with positron annihilation spectroscopy

Tuomisto, Filip; Mäki, J.-M.; Chemekova, T.Yu.; Makarov, Yu.N.; Avdeev, O.V.Mokhov; Segal, A.S.; Ramm, M.G.; Davis, S.; Huminic, G.; Helava, H.; Bickermann, M.; Epelbaum, B.M.

2008 in Journal of crystal growth (Elsevier)

Vacancy profiles and clustering in light ion implanted GaN and ZnO

Tuomisto, F.

2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

Mechanisms of electrical isolation in O⁺-irradiated ZnO

Zubiaga, Asier; Tuomisto, Filip; Coleman, Victoria; Tan, Hoe H.; Jagadish, Chennupati; Koike, Kazuto; Sasa, Shigehiko; Inoue, Masataka; Yano, Mitsuaki

2008 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Characterization of non-polar ZnO layers with positron annihilation spectroscopy

Zubiaga, Asier; Tuomisto, Filip; Zuniga-Perez, Jesus; Munoz-Sanjose, Vicente

2008 in ACTA PHYSICA POLONICA A (Polish Academy of Sciences Publishing House)

Vacancy defects in ZnO irradiated with 2 MeV O⁺

Zubiaga, Asier; Tuomisto, F.; Coleman, V.A.; Jagadish, C.

2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+

Zubiaga Monsalve, Asier; Tuomisto, F.; Coleman, V. A.; Jagadish, C.

2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Clustering of vacancy defects in high-purity semi-insulating SiC

Aavikko, R.; Saarinen, K.; Tuomisto, F.; Magnusson, B.; Son, N.T.; Janzen, E.

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Tensile strain in arsenic heavily-doped Si

Borot, G.; Rubaldo, L.; Clement, L.; Pantel, R.; Kuitunen, K.; Slotte, J.; Tuomisto, F.; Mescot, X.; Gri, M.; Ghibaudo, G.; Dutartre, D.

2007 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon

Kuitunen, Katja; Saarinen, K.; Tuomisto, Filip

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Evidence of a second acceptor state of the E center in Si(1-x)Ge(x)

Kuitunen, Katja; Tuomisto, Filip; Slotte, J.

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Defect Generation and Evolution in Laser Processing of Si

La Magna, A.; Privitera, V.; Mannino, G.; Fortunato, G.; Cuscuna, M.; Svensson, B.G.; Monakhov, E.; Kuitunen, Katja; Slotte, J.; Tuomisto, F.

2007 in Proceedings of the 15th International Conference on Advanced Thermal Processing of Semiconductors (IEEE) (AMER PHYSICAL SOC)

Vacancy generation in liquid phase epitaxy of Si

La Magna, A.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Svensson, B.G.; Monakov, E.; Kuitunen, K.; Slotte, J.; Tuomisto, Filip

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Effects of thermal treatment on optically active vacancy defects in CVD diamonds

Mäki, J.-M.; Tuomisto, F.; Kelly, C.; Fisher, D.; Martineau, P.M.; Twitchen, D.; Woollard, S.

2007 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)

ISSN: 0921-4526

Stabiliser Distribution and Efficiency Examined by Depth Profiling Polypropylene Using a Positron Beam

Pas, S.J.; Tuomisto, F.; Saarinen, K.; Ammala, A.; Turney, T.W.; Hill, A.J.

2007 in Surface Science (Elsevier)

Vacancy Clusters in Germanium

Peaker, Anthony; Markevich, Vladimir; Slotte, Jonatan; Kuitunen, Katja; Tuomisto, Filip; Satta, Alessandra; Simoen, Eddy; Capan, Ivana; Pivac, Branko; Jacimovic, Radojko

2007 in SOLID STATE PHENOMENA (Scientific.net)

Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films

Slotte, Jonatan; Tuomisto, Filip; Saarinen, K.; Moe, C.G.; Keller, S.; DenBaars, S.P.

2007 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Compensating point defects in ⁴He⁺- irradiated InN

Tuomisto, Filip; Pelli, A.; Yu, K.M.; Walukiewicz, W.; Schaff, W.J.

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Vacancy defects in (Zn,Mn)O

Tuomisto, F.; Mycielski, A.; Grasza, K.

2007 in Superlattices and Microstructures (Academic Press Inc.)

Defect distribution in a-plane GaN on Al2O3

Tuomisto, Filip; Paskova, T.; Kröger, R.; Figge, S.; Hommel, D.; Monemar, B.; Kersting, R.

2007 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Tuomisto, Filip; Ranki, V.; Look, D.C.; Farlow, G.C.

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Defect studies in electron irradiated ZnO and GaN

Tuomisto, Filip; Look, D.C.; Farlow, G.C.

2007 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)

ISSN: 0921-4526

Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy

Tuomisto, F.; Paskova, T.; Figge, S.; Hommel, D.; Monemar, B.

2007 in Journal of crystal growth (Elsevier)

Hierarchical porosity in self-assembled polymers: Post-modification of block copolymer-phenolic resin complexes by pyrolysis allows the control of micro- and mesoporosity

Valkama, Sami; Nykänen, Antti; Kosonen, Harri; Ramani, Ramasubbu; Tuomisto, Filip; Engelhardt, Peter; ten Brinke, Gerrit; Ikkala, Olli; Ruokolainen, Janne

2007 in ADVANCED FUNCTIONAL MATERIALS (WILEY-V C H VERLAG GMBH)

ISSN: 1616-301X

Setup for irradiation and characterization of materials and Si particle detectors

Väyrynen, S.; Pusa, P.; Sane, P.; Tikkanen, P.; Räisänen, J.; Kuitunen, K.; Tuomisto, Filip; Härkönen, J.; Kassamakov, I.; Tuominen, E.; Tuovinen, E.

2007 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Elsevier)

ISSN: 0168-9002

Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

Zubiaga, A.; Garcia, J.A.; Plazaola, F.; Tuomisto, F.; Zuniga-Perez, J.; Munoz-Sanjose, V.

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

New method for the determination of the defect profile in thin layers grown over a substrate

Zubiaga, A.; Garcia, J.A.; Plazaola, F.; Tuomisto, Filip; Zuniga-Perez, J.; Munoz-San Jose, V.

2007 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Positron annihilation lifetime spectroscopy of ZnO bulk samples

Zubiaga, A.; Plazaola, F.; Garcia, J.A.; Tuomisto, Filip; Munoz-San Jose, V.; Tena-Zaera, R.

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

Gogova, D.; Siche, D.; Fornari, R.; Monemar, B.; Gibart, P.; Dobos, L.; Pecz, B.; Tuomisto, F.; Bayazitov, R.; Zollo, G.

2006 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)

Deactivation of Li by vacancy clusters in ion implanted and flash-annealed ZnO

Moe Børseth, T.; Tuomisto, F.; Christensen, J.S.; Skorupa, W.; Monakhov, E.V.; Svensson, B.G.; Kuznetsov, A.Yu.

2006 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Dominant shallow acceptor enhanced by oxygen doping in GaN

Monemar, B.; Paskov, P.P.; Tuomisto, F.; Saarinen, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.; Kimura, S.

2006 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)

ISSN: 0921-4526

Effect of high-temperature annealing on the residual strain and bending of free-standing GaN films grown by hydride vapor phase epitaxy

Paskova, T.; Hommel, D.; Paskov, P.P.; Darakchieva, V.; Monemar, B.; Bockowski, M.; Suski, T.; Grzegory, I.; Tuomisto, F.; Saarinen, K.; Ashkenov, N.; Schubert, M.

2006 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)

Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

Pelli, A.; Saarinen, K.; Tuomisto, F.; Ruffenach, S.; Briot, O.

2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Dominant intrinsic acceptors in GaN and ZnO

Saarinen, K.; Hautakangas, S.; Tuomisto, F.

2006 in PHYSICA SCRIPTA (IOP Publishing Ltd.)

ISSN: 0031-8949

Characterisation of a Chromate-Inhibited Primer By Doppler Broadening Energy Spectroscopy

Scholes, F.H.; Furman, S.A.; Hughes, A.E.; Hill, A.J.; Tuomisto, F.; Saarinen, K.; Pas, S.J.

2006 in Journal of Coatings Technology (IOP Publishing Ltd.)

Characterization of a chromate-inhibited primer by doppler broadening energy spectroscopy

Scholes, F. H.; Furman, S. A.; Hughes, A. E.; Hill, A. J.; Tuomisto, F.; Saarinen, K.; Pas, S. J.

2006 in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH (Springer New York)

ISSN: 1547-0091

Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition

Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.; Nordlund, A.

2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Observation of Zn vacancies in ZnO grown by chemical vapor transport

Tuomisto, F.; Saarinen, K.; Grasza, K.; Mycielski, A.

2006 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Tuomisto, F.; Saarinen, K.; Paskova, T.; Monemar, B.; Bockowski, M.; Suski, T.

2006 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Dissociation of V_Ga-O_N complexes in HVPE GaN by high pressure and high temperature annealing

Tuomisto, F.; Hautakangas, S.; Makkonen, I.; Ranki, V.; Puska, M.J.; Saarinen, K.; Bockowski, M.; Suski, T.; Paskova, T.; Monemar, B.; Xu, X.; Look, D.C.

2006 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Correlation between Zn vacancies and photoluminescence emission in ZnO films

Zubiaga, A.; Garcia, J.A.; Plazaola, F.; Tuomisto, F.; Saarinen, K.; Zuniga-Perez, J.; Munoz-Sanjose, V.

2006 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Investigation of the structural and optical properties of free-standing GaN grown by HVPE

Gogova, D.; Hemmingsson, C.; Monemar, B.; Talik, E.; Kruczek, M.; Tuomisto, F.; Saarinen, K.

2005 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Introduction and recovery of point defects in electron-irradiated ZnO

Tuomisto, F.; Saarinen, K.; Look, D.C.; Farlow, G.C.

2005 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 2469-9950

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Tuomisto, Filip; Saarinen, Kimmo; Lucznik, B.; Grzegory, I.; Teisseyre, H.; Suski, T.; Porowski, S.; Hageman, P.R.; Likonen, J.

2005 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness

Zubiaga, A.; Tuomisto, Filip; Plazaola, F.; Saarinen, K.; Garcia, J.A.; Rommeluere, J.F.; Zuniga-Perez, J.; Munoz-San Jose, V.

2005 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Gogova, D.; Kasic, A.; Larsson, H.; Monemar, B.; Tuomisto, F.; Saarinen, K.; Dobos, L.; Pécz, B.; Gibart, P.; Beaumont, B.

2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN

Gogova, D.; Kasic, A.; Larsson, H.; Pecz, B.; Yakimova, R.; Magnusson, B.; Monemar, B.; Tuomisto, F.; Saarinen, Kimmo; Miskys, C.; Stutzmann, M.; Bundesmann, C.; Schubert, M.

2004 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends

Tuomisto, F.; Pennanen, K.; Saarinen, K.; Sadowski, J.

2004 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)

Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

Tuomisto, F.; Saarinen, K.; Look, D.C.

2004 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Observation of vacancies in Ga(1-x)Mn(x)As with positron annihilation spectroscopy

Tuomisto, F.; Slotte, J.; Saarinen, K.; Sadowski, J.

2003 in ACTA PHYSICA POLONICA A (Polish Academy of Sciences Publishing House)

Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO

Tuomisto, F.; Ranki, V.; Saarinen, K.; Look, D.C.

2003 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

Tuomisto, F.; Suski, T.; Teisseyre, H.; Krysko, M.; Leszczynski, M.; Lucznik, B.; Grzegory, I.; Porowski, S.; Wasik, D.; Witowski, A.; Gebicki, W.; Hageman, P.; Saarinen, K.

2003 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Review article, Literature review, Systematic review

Mitä on hyvä yliopisto-opettajuus?

Sistonen, Esko; Riihiaho, Sirpa; Kiesi, Timo; Kyösola, Satu; Nikoskinen, Keijo; Ojapelto, Antti; Tuomisto, Filip

2015 in YLIOPISTOPEDAGOGIIKKA (Yliopistopedagogiikan asiantuntija- ja yhteistyöverkosto Peda-forum)

Interplay of native point defects with ZnO Schottky barriers and doping

Brillson, L.J.; Dong, Y.; Tuomisto, F.; Svensson, B.G.; Kuznetsov, A.Yu.; Doutt, D.; Mosbacker, H.L.; Cantwell, G.; Zhang, J.; Song, J.J.; Fang, Z.-Q.; Look, D.C.

2012 in Journal of Vacuum Science and Technology. Part B. (AMER INST PHYSICS)

ISSN: 1071-1023

Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Slotte, J.; Tuomisto, F.

2012 in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (Elsevier Limited)

ISSN: 1369-8001

Book section, Chapters in research books

Mitä on hyvä yliopisto-opettajuus 360°?

Kiesi, Timo; Kyösola, Satu; Nikoskinen, Keijo; Ojapelto, Antti; Riihiaho, Sirpa; Sistonen, Esko; Tuomisto, Filip

2015

ISBN: 978-952-60-6487-1

ISSN: 1799-4950

Open volume defects: positron annihilation spectroscopy

Tuomisto, Filip

2013 in Semiconductors and Semimetals (Elsevier)

ISBN: 978-0-12-396489-2

ISSN: 0080-8784

Point defects and impurities in bulk GaN studied by positron annihilation spectroscopy

Tuomisto, Filip

2010

Defect characterization in semiconductors with positron annihilation spectroscopy

Tuomisto, Filip

2010

Characterization of vacancy defects in ZnO by positron annihilation spectroscopy

Tuomisto, Filip

2010

Conference proceedings

Vacancy complexes in Sb-doped SnO₂

Korhonen, Esa; Tuomisto, F.; Bierwagen, O.; Speck, J.S.; White, M.E.; Galazka, Z.

2014 in AIP Conference Proceedings (AMERICAN INSTITUTE OF PHYSICS)

ISBN: 978-0-7354-1215-6

ISSN: 0094-243X

Defect studies in MBE grown GaSb_1-xBi_x layers

Segercrantz, Natalie; Kujala, J.; Tuomisto, F.; Slotte, J.; Song, Y.; Wang, S.

2014 in AIP Conference Proceedings (AMERICAN INSTITUTE OF PHYSICS)

ISBN: 978-0-7354-1215-6

ISSN: 0094-243X

Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

Slotte, J.; Tuomisto, F.; Kujala, J.; Holm, A. M.; Segercrantz, N.; Kilpeläinen, S.; Kuitunen, K.; Simoen, E.; Gencarelli, F.; Loo, R.; Shimura, Y.

2014

Higher level academic nuclear engineering education in finland - need of post graduates?

Salomaa, R.; Ala-Heikkilä, J.; Tuomisto, F.; Kyrki-Rajamäki, R.; Vihavainen, J.; Lehto, J.; Harjula, R.; Olin, M.; Vanttola, T.; Avolahti, J.; Aurela, J.; Koskinen, K.; Heikinheimo, L.; Hyvärinen, J.; Juurmaa, T.; Palmu, M.

2013

Defects in nitrides, positron annihilation spectroscopy

Tuomisto, Filip

2013 in Proceedings of SPIE (European Nuclear Society)

ISBN: 9780819493941

ISSN: 0277-786X

Defect activation in MOVPE GaN under low energy electron beam irradiation

Nykänen, Henri; Suihkonen, Sami; Kilanski, Lucasz; Sopanen, Markku; Tuomisto, Filip

2012

Role of Excessive Vacancy Generated in p-n Type Duplex Cu2O Film under Anodic Bias in TGSCC of Pure Copper

Aaltonen, Pertti; Yagodzinskyy, Yuriy; Kilpeläinen, Simo; Tuomisto, Filip; Hänninen, Hannu

2011

Acceptor Type Vacancy Complexes In As-Grown ZnO

Zubiaga, Asier; Tuomisto, Filip; Zuniga-Perez, J.

2010 in AIP Conference Proceedings (AMERICAN INSTITUTE OF PHYSICS)

ISBN: 978-0-7354-0847-0

ISSN: 0094-243X

Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis

Paskova, T.; Hanser, A.; Preble, E.; Evans, K.; Kroeger, R.; Tuomisto, F.; Kersting, R.; Alcorn, R.; Ashley, S.; Pagel, C.; Valcheva, E.; Paskov, P.P.; Monemar, B.

2008 in Proceedings of SPIE (SPIE)

ISBN: 978-0-8194-7069-0

ISSN: 0277-786X

Effect of Hydrogen on Plastic Strain Localization in Single Crystals of Nickel and Austenitic Stainless Steel

Yagodzinskyy, Yuriy; Saukkonen, T.; Tuomisto, Filip; Barannikova, Svetlana; Zuev, Lev; Hänninen, Hannu

2008

ISBN: 978-1-61503-003-3

Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN

Reurings, F.; Tuomisto, F.

2007 in Proceedings of SPIE (SPIE)

ISBN: 978-0-8194-6586-3

ISSN: 0277-786X

Vacancy defect distributions in bulk ZnO crystals

Tuomisto, Filip; Look, D.C.

2007 in Proceedings of SPIE (SPIE)

ISBN: 978-0-8194-6587-0

ISSN: 0277-786X

Defect studies in HVPE GaN by positron annihilation spectroscopy

Tuomisto, Filip

2007 in Proceedings of SPIE (SPIE)

ISBN: 978-0-8194-6586-3

ISSN: 0277-786X

Oxygen related shallow acceptor in GaN

Monemar, B.; Paskov, P.P.; Tuomisto, F.; Saarinen, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.; Kimura, S.

2005 in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS (MATERIALS RESEARCH SOCIETY)

ISBN: 1-55899-779-2

ISSN: 0272-9172

High pressure annealing of HVPE GaN free-standing films Redistribution of defects and stress

Paskova, T.; Suski, T.; Bockowski, M.; Paskov, P. P.; Darakchieva, V.; Monemar, B.; Tuomisto, F.; Saarinen, K.; Ashkenov, N.; Schubert, M.; Roder, C.; Hommel, D.

2005 in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS (MATERIALS RESEARCH SOCIETY)

ISBN: 1-55899-779-2

ISSN: 0272-9172

Non-refereed scientific articles

Unrefereed journal articles

Preface to Special Topic Defects in Semiconductors

Tuomisto, Filip; Makkonen, Ilja

2016 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Publications intended for professional communities

Article in professional conference proceedings

Mitä on hyvä yliopisto-opettajuus?

Sistonen, Esko; Kyösola, Satu; Kiesi, Timo; Tuomisto, Filip; Riihiaho, Sirpa

2015

Published development or research report

Mono and Bimodal Porosity by Pyrolysis of Block Copolymer-phenolic Resin Complexes

Soininen, A.; Valkama, S.; Kosonen, H.; Nykänen, A.; Ramasubbu, R.; Tuomisto, F.; Engelhardt, P.; ten Brinke, G.; Ikkala, O.; Ruokolainen, J.

2008

High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

Paskova, T.; Suski, T.; Bockowski, M.; Paskov, P.P.; Darakchieva, V.; Monemar, B.; Tuomisto, F.; Saarinen, K.; Ashkenov, N.; Schubert, M.; Roder, C.; Hommel, D.

2005

Development of a Triple-Coincidence Positron Lifetime Spectrometer for Nuclear Materials Research

Heikinheimo, Janne; Bes, Rene; Tuomisto, Filip

2016