Riikka Puurunen

Peer-reviewed scientific articles

Journal article-refereed, Original research

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition Growth and mechanical properties

Ylivaara, Oili M E; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo Pekka; Ronkainen, Helena; Puurunen, Riikka

2017 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)

ISSN: 0734-2101

Thermal conductivity of amorphous Al₂O₃/TiO₂ nanolaminates deposited by atomic layer deposition

Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo Pekka

2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)

ISSN: 0957-4484

Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon

Kilpi, Lauri; Ylivaara, Oili M. E.; Vaajoki, Antti; Malm, Jari; Sintonen, Sakari; Tuominen, Marko; Puurunen, Riikka L.; Ronkainen, Helena

2016 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)

ISSN: 0734-2101

Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition

Mattinen, Miika; Hämäläinen, Jani; Gao, Feng; Jalkanen, Pasi; Mizohata, Kenichiro; Räisänen, Jyrki; Puurunen, Riikka L.; Ritala, Mikko; Leskelä, Markku

2016 in LANGMUIR (AMER CHEMICAL SOC)

ISSN: 0743-7463

Fracture properties of atomic layer deposited aluminum oxide free-standing membranes

Berdova, Maria; Ylivaara, Oili M. E.; Rontu, Ville; Törmä, Pekka T.; Puurunen, Riikka; Franssila, Sami

2015 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)

ISSN: 0734-2101

Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.

2015 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)

ISSN: 0734-2101

On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Ylivaara, Oili M. E.; Puurunen, Riikka L.

2014 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)

ISSN: 0734-2101

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Putkonen, Matti; Bosund, M.; Ylivaara, Oili M. E.; Puurunen, Riikka; Kilpi, L.; Ronkainen, H.; Sintonen, S.; Ali, S.; Lipsanen, H.; Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Sajavaara, T.; Buchanan, I.; Karwacki, E.; Vähä-Nissi, M.

2014 in THIN SOLID FILMS (Elsevier Science)

ISSN: 0040-6090

X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers

Sintonen, Sakari; Ali, Saima; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri

2014 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)

ISSN: 0734-2101

Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion

Ylivaara, Oili M. E.; Liu, Xuwen; Kilpi, L.; Lyytinen, Jussi; Schneider, D.; Laitinen, M.; Julin, J.; Ali, S.; Sintonen, S.; Berdova, Maria; Haimi, Eero; Sajavaara, T.; Ronkainen, H.; Lipsanen, H.; Koskinen, Jari; Hannula, Simo-Pekka; Puurunen, R.L.

2014 in THIN SOLID FILMS (Elsevier Science)

ISSN: 0040-6090

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

Puurunen, R. L.; Suni, T.; Ylivaara, O. M E; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.

2012 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)

ISSN: 0924-4247

Reducing stiction in microelectromechanical systems by rough nanometer-scale films grown by atomic layer deposition

Puurunen, R. L.; Häärä, A.; Saloniemi, H.; Dekker, J.; Kainlauri, M.; Pohjonen, H.; Suni, T.; Kiihamäki, J.; Santala, E.; Leskelä, M.; Kattelus, H.

2012 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)

ISSN: 0924-4247

Depth profiling of Al₂O₃ + TiO₂ nanolaminates by means of a time-of-flight energy spectrometer

Laitinen, M.; Sajavaara, T.; Rossi, M.; Julin, J.; Puurunen, R. L.; Suni, T.; Ishida, T.; Fujita, H.; Arstila, K.; Brijs, B.; Whitlow, H. J.

2011 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS (Elsevier Science B.V.)

ISSN: 0168-583X

Controlling the Crystallinity and Roughness of Atomic Layer Deposited Titanium Dioxide Films

Puurunen, Riikka L.; Sajavaara, Timo; Santala, Eero; Miikkulainen, Ville; Saukkonen, Tapio; Laitinen, Mikko; Leskelä, Markku

2011 in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (AMER SCIENTIFIC PUBLISHERS)

ISSN: 1533-4880

Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectra

Laamanen, M.; Blomberg, M.; Puurunen, R. L.; Miranto, A.; Kattelus, H.

2010 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)

ISSN: 0924-4247

Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica-alumina, and silica supports

Silvennoinen, Riitta; Jylhä, Olli; Lindblad, Marina; Sainio, Jani; Puurunen, Riikka; Krause, Outi

2007 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Inductively coupled plasma etching of amorphous Al₂O₃ and TiO₂ mask layers grown by atomic layer deposition

Dekker, J.; Kolari, K.; Puurunen, R. L.

2006 in Journal of Vacuum Science and Technology. Part B. (AMER INST PHYSICS)

ISSN: 1071-1023

Nucleation of atomic-layer-deposited HfO ₂ films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

Green, M. L.; Allen, A. J.; Li, X.; Wang, J.; Ilavsky, J.; Delabie, A.; Puurunen, R. L.; Brijs, B.

2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Atomic layer deposition of hafnium oxide on germanium substrates

Delabie, Annelies; Puurunen, Riikka L.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc M.; Meuris, Marc; Viitanen, Minna M.; Brongersma, Hidde H.; De Ridder, Marco; Goncharova, Lyudmila V.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman

2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-κ dielectric HfO2 layers

Hellin, David; Delabie, Annelies; Puurunen, Riikka L.; Beaven, Peter; Conard, Thierry; Brijs, Bert; De Gendt, Stefan; Vinckier, Chris

2005 in ANALYTICAL SCIENCES (Japan Society for Analytical Chemistry)

ISSN: 0910-6340

The future of high-K on pure germanium and its importance for Ge CMOS

Meuris, M.; Delabie, A.; Van Elshocht, S.; Kubicek, S.; Verheyen, P.; De Jaeger, B.; Van Steenbergen, J.; Winderickx, G.; Van Moorhem, E.; Puurunen, R. L.; Brijs, B.; Caymax, M.; Conard, T.; Richard, O.; Vandervorst, W.; Zhao, C.; De Gendt, S.; Schram, T.; Chiarella, T.; Onsia, B.; Teerlinck, I.; Houssa, M.; Mertens, P. W.; Raskin, G.; Mijlemans, P.; Biesemans, S.; Heyns, M. M.

2005 in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (Elsevier Limited)

ISSN: 1369-8001

Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water

Puurunen, Riikka L.

2005 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Surface chemistry of atomic layer deposition A case study for the trimethylaluminum/water process

Puurunen, Riikka L.

2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications Analysis of the density of nanometer-thin films

Puurunen, Riikka L.; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin L.; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc

2005 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

Puurunen, Riikka L.

2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Erratum Random deposition as a growth mode in atomic layer deposition (Chemical Vapor Deposition (2004) 10 (159))

Puurunen, Riikka L.

2005 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)

ISSN: 0948-1907

Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water

Puurunen, Riikka L.

2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Island growth as a growth mode in atomic layer deposition A phenomenological model

Puurunen, Riikka L.; Vandervorst, Wilfried

2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon Growth mode modeling and transmission electron microscopy

Puurunen, Riikka L.; Vandervorst, Wilfried; Besling, Wim F A; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao, Chao; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Viitanen, Minna M.; De Ridder, Marco; Brongersma, Hidde H.; Tamminga, Yde; Dao, Thuy; De Win, Toon; Verheijen, Marcel; Kaiser, Monja; Tuominen, Marko

2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Chromium(III) supported on aluminum-nitride-surfaced alumina: characteristics and dehydrogenation activity

Puurunen, Riikka; Airaksinen, Sanna; Krause, Outi

2003 in JOURNAL OF CATALYSIS (Academic Press Inc.)

ISSN: 0021-9517

Growth Per Cycle in Atomic Layer Deposition: A Theoretical Model

Puurunen, Riikka

2003 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)

Growth Per Cycle in Atomic Layer Deposition: Real Application Examples of a Theoretical Model

Puurunen, Riikka

2003 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)

Growth of Aluminum Nitride on Porous Alumina and Silica through Separate Saturated Gas-Solid Reactions of Trimethylaluminum and Ammonia

Puurunen, Riikka; Root, Andrew; Sarv, Priit; Viitanen, Minna; Brongersma, Hidde; Lindblad, Marina; Krause, Outi

2002 in CHEMISTRY OF MATERIALS (American Chemical Society ACS)

Spectroscopic Study on the Irreversible Deactivation of Chromia/Alumina Dehydrogenation Catalysts

Puurunen, Riikka; Weckhuysen, Bert

2002 in JOURNAL OF CATALYSIS (Academic Press Inc.)

ISSN: 0021-9517

Preparation of silica-supported cobalt catalysts through chemisorption of cobalt(II) and cobalt(III) acetylacetonate

Rautiainen, Aimo; Lindblad, Marina; Backman, Leif; Puurunen, Riikka

2002 in PHYSICAL CHEMISTRY CHEMICAL PHYSICS (ROYAL SOC CHEMISTRY)

Monitoring chromia/alumina catalysts in situ during propane dehydrogenation by optical fiber UV-visible diffuse reflectance spectroscopy

Puurunen, Riikka L.; Beheydt, Bram G.; Weckhuysen, Bert M.

2001 in JOURNAL OF CATALYSIS (Academic Press Inc.)

ISSN: 0021-9517

Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina

Puurunen, Riikka L.; Lindblad, Marina; Root, Andrew; Krause, A.Outi I.

2001 in PHYSICAL CHEMISTRY CHEMICAL PHYSICS (ROYAL SOC CHEMISTRY)

Growth of aluminium nitride on porous silica by atomic layer chemical vapour deposition

Puurunen, R.L.; Root, A.; Sarv, P.; Haukka, S.; Iiskola, E.I.; Lindblad, M.; Krause, A.O.I.

2000 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Review article, Literature review, Systematic review

A short history of atomic layer deposition Tuomo Suntola's atomic layer epitaxy

Puurunen, Riikka L.

2014 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)

ISSN: 0948-1907

Crystallinity of inorganic films grown by atomic layer deposition Overview and general trends

Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

2013 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides A review

Puurunen, Riikka L.

2005 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)

ISSN: 0948-1907

Book section, Chapters in research books

Low-temperature processes for MEMS device fabrication

Kiihamäki, Jyrki; Kattelus, Hannu; Blomberg, Martti; Puurunen, Riikka; Laamanen, Mari; Pekko, Panu; Saarilahti, Jaakko; Ritala, Heini; Rissanen, Anna

2010 in NATO Science for Peace and Security Series B: Physics and Biophysics (Wiley-VCH Verlag)

ISBN: 9789048138050

ISSN: 1874-6500

Atomic Layer Deposition in MEMS Technology

Puurunen, Riikka L.; Kattelus, Hannu; Suntola, Tuomo

2010

ISBN: 9780815515944

Conference proceedings

Use of ALD thin film bragg mirror stacks in tuneable visible light mems fabry-perot interferometers

Rissanen, Anna; Puurunen, Riikka L.

2012

ISBN: 9780819488923

Direct wafer bonding of atomic layer deposited TiO₂ and Al ₂O₃ thin films

Puurunen, R. L.; Suni, T.; Ylivaara, O.; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.

2011

ISBN: 9781457701573

Vapor-phase self-assembled monolayers for improved MEMS reliability

Rissanen, Anna; Tappura, Kirsi; Laamanen, Mari; Puurunen, Riikka; Färm, Elina; Ritala, Mikko; Leskelä, Markku

2010

ISBN: 9781424481682

Bonding of ALD alumina for advanced SOI substrates

Suni, Tommi; Puurunen, Riikka L.; Ylivaara, Oili; Kattelus, Hannu; Henttinen, Kimmo; Ishida, Tadashi; Fujita, Hiroyuki

2010

ISBN: 9781566778237

Implementing ALD layers in MEMS processing

Puurunen, R. L.; Saarilahti, J.; Kattelus, H.

2007

ISBN: 9781566775731

Surface preparation techniques for high-k deposition on Ge substrates

Van Elshocht, Sven; Delabie, Annelies; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Puurunen, Riikka; Richard, Olivier; Van Steenbergen, Jan; Zhao, Chao; Meuris, Marc; Heyns, Marc M.

2005 in Solid State Phenomena (Trans Tech Publications Ltd.)

ISBN: 390845106X

ISSN: 1012-0394

Implementation of high-k gate dielectrics - A status update

De Gendt, S.; Chen, J.; Carter, R.; Cartier, E.; Caymax, M.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Maes, J. W.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.

2003

ISBN: 4891140372

Scaling of Hf-based gate dielectrics - Integration with polysilicon gates

De Gendt, S.; Caymax, M.; Chen, J.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Vandervorst, W.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.

2003

ISBN: 1566774055

Erratum Growth per cycle in atomic layer deposition: A theoretical model (Chemical Vapor Deposition (2003) 9 (249))

Puurunen, Riikka L.

2004