Riikka Puurunen
Associate professor, Catalysis Science and Technology at Aalto University School of Business
Schools
- Aalto University School of Business
Links
Biography
Aalto University School of Business
Associate professor (tenure track), Catalysis Science and Technology. Strong background and continued interest in Atomic Layer Deposition (ALD); aiming to build research e.g. with microreactors and in situ/operando measurements. "Work-hobby:" history of ALD; interested in open science approaches. Feb-Jul 2017 working 60% at Aalto University and 40% at VTT Technical Reseach Centre of Finland; from Aug 2017 on, full time at Aalto University. Open for new (and old!) collaborations.
Peer-reviewed scientific articles
Journal article-refereed, Original researchAluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition Growth and mechanical properties
Ylivaara, Oili M E; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo Pekka; Ronkainen, Helena; Puurunen, Riikka2017 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition
Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo Pekka2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
Kilpi, Lauri; Ylivaara, Oili M. E.; Vaajoki, Antti; Malm, Jari; Sintonen, Sakari; Tuominen, Marko; Puurunen, Riikka L.; Ronkainen, Helena2016 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition
Mattinen, Miika; Hämäläinen, Jani; Gao, Feng; Jalkanen, Pasi; Mizohata, Kenichiro; Räisänen, Jyrki; Puurunen, Riikka L.; Ritala, Mikko; Leskelä, Markku2016 in LANGMUIR (AMER CHEMICAL SOC)ISSN: 0743-7463Fracture properties of atomic layer deposited aluminum oxide free-standing membranes
Berdova, Maria; Ylivaara, Oili M. E.; Rontu, Ville; Törmä, Pekka T.; Puurunen, Riikka; Franssila, Sami2015 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis
Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.2015 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition
Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Ylivaara, Oili M. E.; Puurunen, Riikka L.2014 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Putkonen, Matti; Bosund, M.; Ylivaara, Oili M. E.; Puurunen, Riikka; Kilpi, L.; Ronkainen, H.; Sintonen, S.; Ali, S.; Lipsanen, H.; Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Sajavaara, T.; Buchanan, I.; Karwacki, E.; Vähä-Nissi, M.2014 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers
Sintonen, Sakari; Ali, Saima; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri2014 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Ylivaara, Oili M. E.; Liu, Xuwen; Kilpi, L.; Lyytinen, Jussi; Schneider, D.; Laitinen, M.; Julin, J.; Ali, S.; Sintonen, S.; Berdova, Maria; Haimi, Eero; Sajavaara, T.; Ronkainen, H.; Lipsanen, H.; Koskinen, Jari; Hannula, Simo-Pekka; Puurunen, R.L.2014 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films
Puurunen, R. L.; Suni, T.; Ylivaara, O. M E; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.2012 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)ISSN: 0924-4247Reducing stiction in microelectromechanical systems by rough nanometer-scale films grown by atomic layer deposition
Puurunen, R. L.; Häärä, A.; Saloniemi, H.; Dekker, J.; Kainlauri, M.; Pohjonen, H.; Suni, T.; Kiihamäki, J.; Santala, E.; Leskelä, M.; Kattelus, H.2012 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)ISSN: 0924-4247Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer
Laitinen, M.; Sajavaara, T.; Rossi, M.; Julin, J.; Puurunen, R. L.; Suni, T.; Ishida, T.; Fujita, H.; Arstila, K.; Brijs, B.; Whitlow, H. J.2011 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS (Elsevier Science B.V.)ISSN: 0168-583XControlling the Crystallinity and Roughness of Atomic Layer Deposited Titanium Dioxide Films
Puurunen, Riikka L.; Sajavaara, Timo; Santala, Eero; Miikkulainen, Ville; Saukkonen, Tapio; Laitinen, Mikko; Leskelä, Markku2011 in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (AMER SCIENTIFIC PUBLISHERS)ISSN: 1533-4880Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectra
Laamanen, M.; Blomberg, M.; Puurunen, R. L.; Miranto, A.; Kattelus, H.2010 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)ISSN: 0924-4247Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica-alumina, and silica supports
Silvennoinen, Riitta; Jylhä, Olli; Lindblad, Marina; Sainio, Jani; Puurunen, Riikka; Krause, Outi2007 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition
Dekker, J.; Kolari, K.; Puurunen, R. L.2006 in Journal of Vacuum Science and Technology. Part B. (AMER INST PHYSICS)ISSN: 1071-1023Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation
Green, M. L.; Allen, A. J.; Li, X.; Wang, J.; Ilavsky, J.; Delabie, A.; Puurunen, R. L.; Brijs, B.2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Atomic layer deposition of hafnium oxide on germanium substrates
Delabie, Annelies; Puurunen, Riikka L.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc M.; Meuris, Marc; Viitanen, Minna M.; Brongersma, Hidde H.; De Ridder, Marco; Goncharova, Lyudmila V.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-κ dielectric HfO2 layers
Hellin, David; Delabie, Annelies; Puurunen, Riikka L.; Beaven, Peter; Conard, Thierry; Brijs, Bert; De Gendt, Stefan; Vinckier, Chris2005 in ANALYTICAL SCIENCES (Japan Society for Analytical Chemistry)ISSN: 0910-6340The future of high-K on pure germanium and its importance for Ge CMOS
Meuris, M.; Delabie, A.; Van Elshocht, S.; Kubicek, S.; Verheyen, P.; De Jaeger, B.; Van Steenbergen, J.; Winderickx, G.; Van Moorhem, E.; Puurunen, R. L.; Brijs, B.; Caymax, M.; Conard, T.; Richard, O.; Vandervorst, W.; Zhao, C.; De Gendt, S.; Schram, T.; Chiarella, T.; Onsia, B.; Teerlinck, I.; Houssa, M.; Mertens, P. W.; Raskin, G.; Mijlemans, P.; Biesemans, S.; Heyns, M. M.2005 in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (Elsevier Limited)ISSN: 1369-8001Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water
Puurunen, Riikka L.2005 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Surface chemistry of atomic layer deposition A case study for the trimethylaluminum/water process
Puurunen, Riikka L.2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications Analysis of the density of nanometer-thin films
Puurunen, Riikka L.; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin L.; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc2005 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]
Puurunen, Riikka L.2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Erratum Random deposition as a growth mode in atomic layer deposition (Chemical Vapor Deposition (2004) 10 (159))
Puurunen, Riikka L.2005 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)ISSN: 0948-1907Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water
Puurunen, Riikka L.2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Island growth as a growth mode in atomic layer deposition A phenomenological model
Puurunen, Riikka L.; Vandervorst, Wilfried2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon Growth mode modeling and transmission electron microscopy
Puurunen, Riikka L.; Vandervorst, Wilfried; Besling, Wim F A; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao, Chao; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Viitanen, Minna M.; De Ridder, Marco; Brongersma, Hidde H.; Tamminga, Yde; Dao, Thuy; De Win, Toon; Verheijen, Marcel; Kaiser, Monja; Tuominen, Marko2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Chromium(III) supported on aluminum-nitride-surfaced alumina: characteristics and dehydrogenation activity
Puurunen, Riikka; Airaksinen, Sanna; Krause, Outi2003 in JOURNAL OF CATALYSIS (Academic Press Inc.)ISSN: 0021-9517Growth Per Cycle in Atomic Layer Deposition: A Theoretical Model
Puurunen, Riikka2003 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)Growth Per Cycle in Atomic Layer Deposition: Real Application Examples of a Theoretical Model
Puurunen, Riikka2003 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)Growth of Aluminum Nitride on Porous Alumina and Silica through Separate Saturated Gas-Solid Reactions of Trimethylaluminum and Ammonia
Puurunen, Riikka; Root, Andrew; Sarv, Priit; Viitanen, Minna; Brongersma, Hidde; Lindblad, Marina; Krause, Outi2002 in CHEMISTRY OF MATERIALS (American Chemical Society ACS)Spectroscopic Study on the Irreversible Deactivation of Chromia/Alumina Dehydrogenation Catalysts
Puurunen, Riikka; Weckhuysen, Bert2002 in JOURNAL OF CATALYSIS (Academic Press Inc.)ISSN: 0021-9517Preparation of silica-supported cobalt catalysts through chemisorption of cobalt(II) and cobalt(III) acetylacetonate
Rautiainen, Aimo; Lindblad, Marina; Backman, Leif; Puurunen, Riikka2002 in PHYSICAL CHEMISTRY CHEMICAL PHYSICS (ROYAL SOC CHEMISTRY)Monitoring chromia/alumina catalysts in situ during propane dehydrogenation by optical fiber UV-visible diffuse reflectance spectroscopy
Puurunen, Riikka L.; Beheydt, Bram G.; Weckhuysen, Bert M.2001 in JOURNAL OF CATALYSIS (Academic Press Inc.)ISSN: 0021-9517Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina
Puurunen, Riikka L.; Lindblad, Marina; Root, Andrew; Krause, A.Outi I.2001 in PHYSICAL CHEMISTRY CHEMICAL PHYSICS (ROYAL SOC CHEMISTRY)Growth of aluminium nitride on porous silica by atomic layer chemical vapour deposition
Puurunen, R.L.; Root, A.; Sarv, P.; Haukka, S.; Iiskola, E.I.; Lindblad, M.; Krause, A.O.I.2000 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332Review article, Literature review, Systematic reviewA short history of atomic layer deposition Tuomo Suntola's atomic layer epitaxy
Puurunen, Riikka L.2014 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)ISSN: 0948-1907Crystallinity of inorganic films grown by atomic layer deposition Overview and general trends
Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.2013 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides A review
Puurunen, Riikka L.2005 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)ISSN: 0948-1907Book section, Chapters in research booksLow-temperature processes for MEMS device fabrication
Kiihamäki, Jyrki; Kattelus, Hannu; Blomberg, Martti; Puurunen, Riikka; Laamanen, Mari; Pekko, Panu; Saarilahti, Jaakko; Ritala, Heini; Rissanen, Anna2010 in NATO Science for Peace and Security Series B: Physics and Biophysics (Wiley-VCH Verlag)ISBN: 9789048138050ISSN: 1874-6500Atomic Layer Deposition in MEMS Technology
Puurunen, Riikka L.; Kattelus, Hannu; Suntola, Tuomo2010 ISBN: 9780815515944Conference proceedingsUse of ALD thin film bragg mirror stacks in tuneable visible light mems fabry-perot interferometers
Rissanen, Anna; Puurunen, Riikka L.2012 ISBN: 9780819488923Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films
Puurunen, R. L.; Suni, T.; Ylivaara, O.; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.2011 ISBN: 9781457701573Vapor-phase self-assembled monolayers for improved MEMS reliability
Rissanen, Anna; Tappura, Kirsi; Laamanen, Mari; Puurunen, Riikka; Färm, Elina; Ritala, Mikko; Leskelä, Markku2010 ISBN: 9781424481682Bonding of ALD alumina for advanced SOI substrates
Suni, Tommi; Puurunen, Riikka L.; Ylivaara, Oili; Kattelus, Hannu; Henttinen, Kimmo; Ishida, Tadashi; Fujita, Hiroyuki2010 ISBN: 9781566778237Implementing ALD layers in MEMS processing
Puurunen, R. L.; Saarilahti, J.; Kattelus, H.2007 ISBN: 9781566775731Surface preparation techniques for high-k deposition on Ge substrates
Van Elshocht, Sven; Delabie, Annelies; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Puurunen, Riikka; Richard, Olivier; Van Steenbergen, Jan; Zhao, Chao; Meuris, Marc; Heyns, Marc M.2005 in Solid State Phenomena (Trans Tech Publications Ltd.)ISBN: 390845106XISSN: 1012-0394Implementation of high-k gate dielectrics - A status update
De Gendt, S.; Chen, J.; Carter, R.; Cartier, E.; Caymax, M.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Maes, J. W.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.2003 ISBN: 4891140372Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
De Gendt, S.; Caymax, M.; Chen, J.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Vandervorst, W.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.2003 ISBN: 1566774055Erratum Growth per cycle in atomic layer deposition: A theoretical model (Chemical Vapor Deposition (2003) 9 (249))
Puurunen, Riikka L.2004
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition Growth and mechanical properties
Ylivaara, Oili M E; Kilpi, Lauri; Liu, Xuwen; Sintonen, Sakari; Ali, Saima; Laitinen, Mikko; Julin, Jaakko; Haimi, Eero; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo Pekka; Ronkainen, Helena; Puurunen, Riikka
2017 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101
Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition
Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo Pekka
2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)ISSN: 0957-4484
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
Kilpi, Lauri; Ylivaara, Oili M. E.; Vaajoki, Antti; Malm, Jari; Sintonen, Sakari; Tuominen, Marko; Puurunen, Riikka L.; Ronkainen, Helena
2016 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101
Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition
Mattinen, Miika; Hämäläinen, Jani; Gao, Feng; Jalkanen, Pasi; Mizohata, Kenichiro; Räisänen, Jyrki; Puurunen, Riikka L.; Ritala, Mikko; Leskelä, Markku
2016 in LANGMUIR (AMER CHEMICAL SOC)ISSN: 0743-7463
Fracture properties of atomic layer deposited aluminum oxide free-standing membranes
Berdova, Maria; Ylivaara, Oili M. E.; Rontu, Ville; Törmä, Pekka T.; Puurunen, Riikka; Franssila, Sami
2015 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101
Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis
Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.
2015 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101
On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition
Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Ylivaara, Oili M. E.; Puurunen, Riikka L.
2014 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Putkonen, Matti; Bosund, M.; Ylivaara, Oili M. E.; Puurunen, Riikka; Kilpi, L.; Ronkainen, H.; Sintonen, S.; Ali, S.; Lipsanen, H.; Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka; Sajavaara, T.; Buchanan, I.; Karwacki, E.; Vähä-Nissi, M.
2014 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090
X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers
Sintonen, Sakari; Ali, Saima; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri
2014 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)ISSN: 0734-2101
Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Ylivaara, Oili M. E.; Liu, Xuwen; Kilpi, L.; Lyytinen, Jussi; Schneider, D.; Laitinen, M.; Julin, J.; Ali, S.; Sintonen, S.; Berdova, Maria; Haimi, Eero; Sajavaara, T.; Ronkainen, H.; Lipsanen, H.; Koskinen, Jari; Hannula, Simo-Pekka; Puurunen, R.L.
2014 in THIN SOLID FILMS (Elsevier Science)ISSN: 0040-6090
Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films
Puurunen, R. L.; Suni, T.; Ylivaara, O. M E; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.
2012 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)ISSN: 0924-4247
Reducing stiction in microelectromechanical systems by rough nanometer-scale films grown by atomic layer deposition
Puurunen, R. L.; Häärä, A.; Saloniemi, H.; Dekker, J.; Kainlauri, M.; Pohjonen, H.; Suni, T.; Kiihamäki, J.; Santala, E.; Leskelä, M.; Kattelus, H.
2012 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)ISSN: 0924-4247
Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer
Laitinen, M.; Sajavaara, T.; Rossi, M.; Julin, J.; Puurunen, R. L.; Suni, T.; Ishida, T.; Fujita, H.; Arstila, K.; Brijs, B.; Whitlow, H. J.
2011 in NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS (Elsevier Science B.V.)ISSN: 0168-583X
Controlling the Crystallinity and Roughness of Atomic Layer Deposited Titanium Dioxide Films
Puurunen, Riikka L.; Sajavaara, Timo; Santala, Eero; Miikkulainen, Ville; Saukkonen, Tapio; Laitinen, Mikko; Leskelä, Markku
2011 in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (AMER SCIENTIFIC PUBLISHERS)ISSN: 1533-4880
Thin film absorbers for visible, near-infrared, and short-wavelength infrared spectra
Laamanen, M.; Blomberg, M.; Puurunen, R. L.; Miranto, A.; Kattelus, H.
2010 in SENSORS AND ACTUATORS A: PHYSICAL (Elsevier)ISSN: 0924-4247
Atomic layer deposition of iridium(III) acetylacetonate on alumina, silica-alumina, and silica supports
Silvennoinen, Riitta; Jylhä, Olli; Lindblad, Marina; Sainio, Jani; Puurunen, Riikka; Krause, Outi
2007 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332
Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition
Dekker, J.; Kolari, K.; Puurunen, R. L.
2006 in Journal of Vacuum Science and Technology. Part B. (AMER INST PHYSICS)ISSN: 1071-1023
Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation
Green, M. L.; Allen, A. J.; Li, X.; Wang, J.; Ilavsky, J.; Delabie, A.; Puurunen, R. L.; Brijs, B.
2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Atomic layer deposition of hafnium oxide on germanium substrates
Delabie, Annelies; Puurunen, Riikka L.; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Heyns, Marc M.; Meuris, Marc; Viitanen, Minna M.; Brongersma, Hidde H.; De Ridder, Marco; Goncharova, Lyudmila V.; Garfunkel, Eric; Gustafsson, Torgny; Tsai, Wilman
2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-κ dielectric HfO2 layers
Hellin, David; Delabie, Annelies; Puurunen, Riikka L.; Beaven, Peter; Conard, Thierry; Brijs, Bert; De Gendt, Stefan; Vinckier, Chris
2005 in ANALYTICAL SCIENCES (Japan Society for Analytical Chemistry)ISSN: 0910-6340
The future of high-K on pure germanium and its importance for Ge CMOS
Meuris, M.; Delabie, A.; Van Elshocht, S.; Kubicek, S.; Verheyen, P.; De Jaeger, B.; Van Steenbergen, J.; Winderickx, G.; Van Moorhem, E.; Puurunen, R. L.; Brijs, B.; Caymax, M.; Conard, T.; Richard, O.; Vandervorst, W.; Zhao, C.; De Gendt, S.; Schram, T.; Chiarella, T.; Onsia, B.; Teerlinck, I.; Houssa, M.; Mertens, P. W.; Raskin, G.; Mijlemans, P.; Biesemans, S.; Heyns, M. M.
2005 in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (Elsevier Limited)ISSN: 1369-8001
Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water
Puurunen, Riikka L.
2005 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332
Surface chemistry of atomic layer deposition A case study for the trimethylaluminum/water process
Puurunen, Riikka L.
2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications Analysis of the density of nanometer-thin films
Puurunen, Riikka L.; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin L.; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc
2005 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)ISSN: 0003-6951
Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]
Puurunen, Riikka L.
2005 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Erratum Random deposition as a growth mode in atomic layer deposition (Chemical Vapor Deposition (2004) 10 (159))
Puurunen, Riikka L.
2005 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)ISSN: 0948-1907
Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water
Puurunen, Riikka L.
2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Island growth as a growth mode in atomic layer deposition A phenomenological model
Puurunen, Riikka L.; Vandervorst, Wilfried
2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon Growth mode modeling and transmission electron microscopy
Puurunen, Riikka L.; Vandervorst, Wilfried; Besling, Wim F A; Richard, Olivier; Bender, Hugo; Conard, Thierry; Zhao, Chao; Delabie, Annelies; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Viitanen, Minna M.; De Ridder, Marco; Brongersma, Hidde H.; Tamminga, Yde; Dao, Thuy; De Win, Toon; Verheijen, Marcel; Kaiser, Monja; Tuominen, Marko
2004 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Chromium(III) supported on aluminum-nitride-surfaced alumina: characteristics and dehydrogenation activity
Puurunen, Riikka; Airaksinen, Sanna; Krause, Outi
2003 in JOURNAL OF CATALYSIS (Academic Press Inc.)ISSN: 0021-9517
Growth Per Cycle in Atomic Layer Deposition: A Theoretical Model
Puurunen, Riikka
2003 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)Growth Per Cycle in Atomic Layer Deposition: Real Application Examples of a Theoretical Model
Puurunen, Riikka
2003 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)Growth of Aluminum Nitride on Porous Alumina and Silica through Separate Saturated Gas-Solid Reactions of Trimethylaluminum and Ammonia
Puurunen, Riikka; Root, Andrew; Sarv, Priit; Viitanen, Minna; Brongersma, Hidde; Lindblad, Marina; Krause, Outi
2002 in CHEMISTRY OF MATERIALS (American Chemical Society ACS)Spectroscopic Study on the Irreversible Deactivation of Chromia/Alumina Dehydrogenation Catalysts
Puurunen, Riikka; Weckhuysen, Bert
2002 in JOURNAL OF CATALYSIS (Academic Press Inc.)ISSN: 0021-9517
Preparation of silica-supported cobalt catalysts through chemisorption of cobalt(II) and cobalt(III) acetylacetonate
Rautiainen, Aimo; Lindblad, Marina; Backman, Leif; Puurunen, Riikka
2002 in PHYSICAL CHEMISTRY CHEMICAL PHYSICS (ROYAL SOC CHEMISTRY)Monitoring chromia/alumina catalysts in situ during propane dehydrogenation by optical fiber UV-visible diffuse reflectance spectroscopy
Puurunen, Riikka L.; Beheydt, Bram G.; Weckhuysen, Bert M.
2001 in JOURNAL OF CATALYSIS (Academic Press Inc.)ISSN: 0021-9517
Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina
Puurunen, Riikka L.; Lindblad, Marina; Root, Andrew; Krause, A.Outi I.
2001 in PHYSICAL CHEMISTRY CHEMICAL PHYSICS (ROYAL SOC CHEMISTRY)Growth of aluminium nitride on porous silica by atomic layer chemical vapour deposition
Puurunen, R.L.; Root, A.; Sarv, P.; Haukka, S.; Iiskola, E.I.; Lindblad, M.; Krause, A.O.I.
2000 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)ISSN: 0169-4332
A short history of atomic layer deposition Tuomo Suntola's atomic layer epitaxy
Puurunen, Riikka L.
2014 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)ISSN: 0948-1907
Crystallinity of inorganic films grown by atomic layer deposition Overview and general trends
Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.
2013 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)ISSN: 0021-8979
Formation of metal oxide particles in atomic layer deposition during the chemisorption of metal chlorides A review
Puurunen, Riikka L.
2005 in CHEMICAL VAPOR DEPOSITION (Wiley-VCH Verlag)ISSN: 0948-1907
Book section, Chapters in research booksLow-temperature processes for MEMS device fabrication
Kiihamäki, Jyrki; Kattelus, Hannu; Blomberg, Martti; Puurunen, Riikka; Laamanen, Mari; Pekko, Panu; Saarilahti, Jaakko; Ritala, Heini; Rissanen, Anna2010 in NATO Science for Peace and Security Series B: Physics and Biophysics (Wiley-VCH Verlag)ISBN: 9789048138050ISSN: 1874-6500Atomic Layer Deposition in MEMS Technology
Puurunen, Riikka L.; Kattelus, Hannu; Suntola, Tuomo2010 ISBN: 9780815515944Conference proceedingsUse of ALD thin film bragg mirror stacks in tuneable visible light mems fabry-perot interferometers
Rissanen, Anna; Puurunen, Riikka L.2012 ISBN: 9780819488923Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films
Puurunen, R. L.; Suni, T.; Ylivaara, O.; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.2011 ISBN: 9781457701573Vapor-phase self-assembled monolayers for improved MEMS reliability
Rissanen, Anna; Tappura, Kirsi; Laamanen, Mari; Puurunen, Riikka; Färm, Elina; Ritala, Mikko; Leskelä, Markku2010 ISBN: 9781424481682Bonding of ALD alumina for advanced SOI substrates
Suni, Tommi; Puurunen, Riikka L.; Ylivaara, Oili; Kattelus, Hannu; Henttinen, Kimmo; Ishida, Tadashi; Fujita, Hiroyuki2010 ISBN: 9781566778237Implementing ALD layers in MEMS processing
Puurunen, R. L.; Saarilahti, J.; Kattelus, H.2007 ISBN: 9781566775731Surface preparation techniques for high-k deposition on Ge substrates
Van Elshocht, Sven; Delabie, Annelies; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Puurunen, Riikka; Richard, Olivier; Van Steenbergen, Jan; Zhao, Chao; Meuris, Marc; Heyns, Marc M.2005 in Solid State Phenomena (Trans Tech Publications Ltd.)ISBN: 390845106XISSN: 1012-0394Implementation of high-k gate dielectrics - A status update
De Gendt, S.; Chen, J.; Carter, R.; Cartier, E.; Caymax, M.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Maes, J. W.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.2003 ISBN: 4891140372Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
De Gendt, S.; Caymax, M.; Chen, J.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Vandervorst, W.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.2003 ISBN: 1566774055Erratum Growth per cycle in atomic layer deposition: A theoretical model (Chemical Vapor Deposition (2003) 9 (249))
Puurunen, Riikka L.2004
Low-temperature processes for MEMS device fabrication
Kiihamäki, Jyrki; Kattelus, Hannu; Blomberg, Martti; Puurunen, Riikka; Laamanen, Mari; Pekko, Panu; Saarilahti, Jaakko; Ritala, Heini; Rissanen, Anna
2010 in NATO Science for Peace and Security Series B: Physics and Biophysics (Wiley-VCH Verlag)ISBN: 9789048138050
ISSN: 1874-6500
Atomic Layer Deposition in MEMS Technology
Puurunen, Riikka L.; Kattelus, Hannu; Suntola, Tuomo
2010 ISBN: 9780815515944
Use of ALD thin film bragg mirror stacks in tuneable visible light mems fabry-perot interferometers
Rissanen, Anna; Puurunen, Riikka L.
2012 ISBN: 9780819488923
Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films
Puurunen, R. L.; Suni, T.; Ylivaara, O.; Kondo, H.; Ammar, M.; Ishida, T.; Fujita, H.; Bosseboeuf, A.; Zaima, S.; Kattelus, H.
2011 ISBN: 9781457701573
Vapor-phase self-assembled monolayers for improved MEMS reliability
Rissanen, Anna; Tappura, Kirsi; Laamanen, Mari; Puurunen, Riikka; Färm, Elina; Ritala, Mikko; Leskelä, Markku
2010 ISBN: 9781424481682
Bonding of ALD alumina for advanced SOI substrates
Suni, Tommi; Puurunen, Riikka L.; Ylivaara, Oili; Kattelus, Hannu; Henttinen, Kimmo; Ishida, Tadashi; Fujita, Hiroyuki
2010 ISBN: 9781566778237
Implementing ALD layers in MEMS processing
Puurunen, R. L.; Saarilahti, J.; Kattelus, H.
2007 ISBN: 9781566775731
Surface preparation techniques for high-k deposition on Ge substrates
Van Elshocht, Sven; Delabie, Annelies; Brijs, Bert; Caymax, Matty; Conard, Thierry; Onsia, Bart; Puurunen, Riikka; Richard, Olivier; Van Steenbergen, Jan; Zhao, Chao; Meuris, Marc; Heyns, Marc M.
2005 in Solid State Phenomena (Trans Tech Publications Ltd.)ISBN: 390845106X
ISSN: 1012-0394
Implementation of high-k gate dielectrics - A status update
De Gendt, S.; Chen, J.; Carter, R.; Cartier, E.; Caymax, M.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Maes, J. W.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.
2003 ISBN: 4891140372
Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
De Gendt, S.; Caymax, M.; Chen, J.; Claes, M.; Conard, T.; Delabie, A.; Deweerd, W.; Kaushik, V.; Kerber, A.; Kubicek, S.; Niwa, M.; Pantisano, L.; Puurunen, R.; Ragnarsson, L.; Schram, T.; Shimamoto, Y.; Tsai, W.; Rohr, E.; Van Elshocht, S.; Vandervorst, W.; Witters, T.; Young, E.; Zhao, C.; Heyns, M.
2003 ISBN: 1566774055
Erratum Growth per cycle in atomic layer deposition: A theoretical model (Chemical Vapor Deposition (2003) 9 (249))
Puurunen, Riikka L.2004
Erratum Growth per cycle in atomic layer deposition: A theoretical model (Chemical Vapor Deposition (2003) 9 (249))
Puurunen, Riikka L.
2004 Read about executive education
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