Agam Vajpeyi

I have over 15+ years of experience across R&D, Process Integration/Yield Enhancement/Device Engineering and project management. I have a strong technical background that enables me to understand and learn new technologies quickly. I enjoy working with people from diverse backgrounds. I enjoy cross-group collaboration, leading teams and basically getting things done! Doing my best to drive results and motivating my team to deliver their best gives me the utmost satisfaction. I can bring to any organization I work for, my skillset, unmatched enthusiasm and a sense of unity in the team I work.

Research Interest :

• Simulation, Design and Processing of GaN and Si based optical devices (LED and laser diodes)
• MBE growth of III-Nitrides and associated nonmaterial (Nanowires, quantum dots, etc.)
• Fabrication of porous semiconductors and anodic alumina template
• Rare earth implantation in semiconductors
• Optical and electrical characterization using photoluminescence, Raman spectroscopy, electroluminescence, I-V and C-V measurements

Education

• Doctor of Philosophy (Ph.D.) Singapore-MIT Alliance (SMA), National University of Singapore (2001 — 2005)
• M.Tech Indian Institute of Technology Kharagpur, India (1998 — 2000)

Companies

• Manager (Senior Staff) Qualcomm RF360 FE (2016)
• Program Management - Technology and Integration (Member of Technical Staff) GLOBALFOUNDRIES (2013 — 2016)
• Principal Engineer GLOBALFOUNDRIES (2011 — 2013)
• Assistant Professor Indian Institute of Technology, Guwahati (2010 — 2011)
• Research Scientist Tyndall National Institute (2009 — 2010)
• Senior Research Engineer Institute of Electronic Structure and Laser(IESL), FORTH, Crete, Greece (2007 — 2009)
• Senior Process Integration / Yield Enhancement Engineer Chartered Semiconductor, Singapore (2005 — 2007)
• student National University of Singapore (2001 — 2005)

Awards/Honours Received:

• Marie Curie Fellowship for the post doctoral research work in Greece, 2007
• Received Recognition award for service excellence in Chartered Semiconductor Manufacturing, Singapore, 2006
• Elsevier Student travel award in International conference in Vacuum (IVC-16) held in Venice, Italy, June 2004
• Qualified UGC-CSIR written exam in 2001
• Obtained All India Rank -66 in GATE exam (Physical science) in 1998
• Awarded National Merit Scholarship from 1991-1996 based on 10th and 12th marks

PUBLICATION

International Papers:

• Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes, Ragh Charash, Hyonju Kim-Chauveau, Agam Vajpeyi, Mahbub Akther, Pleun P. Maaskant, Eric Frayssinet, Philippe de Mierry, Jean-Yves Duboz and Brian Corbett, , Phy. Stat. Solidi 2010 (In Press)
• Negative differential resistance in GaN nanowire network, Dragoman M, Konstantinidis G, Cismaru A, Vasilache D, Dinescu A, Dragoman D, Neculoiu D, Buiculescu R, Deligeorgis G , Vajpeyi AP, Georgakilas A, Applied Phys. Lett. 96, 053116 (2010)
• Electron Microscopy of InGaN nanopillars spontaneously grown on Si(111) substrate, Th. Kehagias, I. Kerasiotis, A.P. Vajpeyi, I Hausler, W. Neumann, A. Georgakilas, G. P. Dimitrakopulos, and Ph. Kommninou, Phy. Stat. Solidi (2010)
• Microstructure of N-face InN grown on (111) substrate by plasma-assisted MBE using a thin GaN / AlN buffer layer, G. P. Dimitrakopulos, Th. Kehagias, A Ajagunna, J. Kioseoglou, I. Kerasiotis, G. Nouet, A.P. Vajpeyi, A. Georgakilas, Ph. Kommninou and Th. Karakostas, Phy. Stat. Solidi (2010)
• InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy, A. P. Vajpeyi, A O Ajagunna, G Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki; A Georgakilas, Nanotechnology 20, 325605 ( 2009)
• Effect of substrate temperature on spontaneous GaN nanowires growth and optoelectronic properties, A. P Vajpeyi, G. Tsiakatouras, K. Tsagaraki, M. Androulidaki, A. Georgakilas, S.Tripathy, and S. J. Chua, Physica –E 41 (2009)
• Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy, A. P. VAJPEYI, A O Ajagunna, G Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki; A Georgakilas, Microelectronics Engineering 86, 812–815 (2009)
• High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy, Agam Prakash Vajpeyi, G. Tsiakatouras, K. Tsagaraki, M. Androulidaki, and Alexandros Georgakilas, Mater. Res. Soc. Symp. Proc. Vol. 1068 –C06-08, 2008
• Structural modifications in InP nanostructures prepared by Ar+-ion irradiation, S. K. Mohanta, R. K. Soni, N. N. Gosvami, A. P. Vajpeyi and S. Tripathy, Journal of Applied Physics 102, 074313 (2007)
• Effect of carrier density on surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching, A. P. Vajpeyi, S. J. Chua, S. Tripathy, E. A. Fitzgerald, Applied Physics Letter, 91, 083110 (2007)
• A. Prakash, Y.T. Kim, K. Uram, K. Davis, G. May, M. Spinelli, B. Nehrer, H. M. Lam, M Lei, S. Chiah, L. Y. Yang, X. F. Yu, H. Xiao, Y. M. Teo, C. K. Leong and S. Lian, Characterization of 90nm SOI SRAM Single Cell Failure by Nano Probing Technique, International Symposium on Integrated Circuit ( I S I C ) 2007
• Optical Activation of Eu ions in nanoporous GaN films, A. P. Vajpeyi, S.Tripathy, L.S. Wang, B.C. Foo, S. J. Chua, E.A.Fitzgerald, and E. Alves, Journal of Applied Physics 99,104305 (2006).
• Effect of rapid thermal annealing on optical properties of porous GaN prepared by photo assisted electrochemical etching, A. P. Vajpeyi, S. J. Chua, E. A. Fitzgerald, S. Tripathy, S. R. Sannigrahi, B. C. Foo and L. S. Wang, in Electrochemical and solid state letters 9(4), G150-G154, (2006)
• Investigation of optical properties of nanoporous GaN films, A. P. Vajpeyi, S.Tripathy, S. J. Chua, E .A. Fitzgerald, Physica -E, Vol. 28, pp 141-149, (2005)
• High Optical quality nanoporous GaN prepared by photoassisted electrochemical etching. A. P. Vajpeyi, S. J. Chua, S.Tripathy, E. A. Fitzgerald, W. Liu, P. Chen, and L.S. Wang, Electrochemical and solid state letters Vol. 8, Issue 5, (2005)
• A. P. Vaipeyi, S. Tripathy, S. J Chua and J Arokiaraj, Comparative study of optical properties of nanoporous GaN prepared by UV-assisted electrochemical and electroless etching, 207th Electrochemical Society Meeting, Quebec, Canada, May , 2005